Topic
Lithography
About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.
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TL;DR: In this article, the authors proposed x-ray lithography with wavelengths between 0.2 and 5 nm for semiconductor production, which can achieve high-structural resolution as good as 0.1 μm and a wide scope of advantages for the application in circuit production.
Abstract: X‐ray lithography with wavelengths between 0.2 and 5 nm provides both high‐structural resolution as good as 0.1 μm and a wide scope of advantages for the application in circuit production. Examples for this better process performance compared to optical techniques are: lower particle and dust sensitivity, applicability of simple single‐layer resist technique, high depth of focus without any influence of substrate material and chip topography, and presumably, the highest throughput of all lithography methods which are able to go into the submicron range. However, the introduction of x‐ray lithography into the semiconductor production means a revolutionary change of production technology. This begins with a completely different mask technology which makes, for example, the classical separation of mask substrate fabrication from pattern generation by different manufacturers very problematical and ends with the necessity to introduce x‐ray lithography in relatively large production capacity units consisting of a larger number of x‐ray steppers. The latter is caused by the fact that a storage ring—even in the smallest version, e.g., COSY (Kompakt Speicherring fur Synchrotronstrahlung)—has to supply up to 10 x‐ray steppers with light in order to clearly beat the optical techniques with respect to throughput and lower cost level. To prove such statements in pilot production lines, the necessary tools and components for x‐ray lithography are already or will be available for the first time on a commercial basis in the very near future. Especially steppers, sources, and resists with satisfying specifications have been announced by a growing number of vendors. The most critical problem at present is the mask technology and the tools for defect elimination. However, with the existing technologies, the requirements for 0.5‐μm‐design rules will be met very soon on a pilot scale.
120 citations
01 Jul 2001
120 citations
TL;DR: In this article, laser beam writing, electron beam writing and optical half-tone mask writing by shaped optical beams are discussed and compared to each other, as well as possible advantages and obstacles for selected applications.
120 citations
TL;DR: Compatibility with hard disk drive architecture is demonstrated by fabricating patterns with skewed radial lines with constant angular pitch and with servo patterns that are needed in hard disk drives to generate a radial positional error signal (PES).
Abstract: We explore the lithographic limits of lamellae-forming PS-b-PMMA block copolymers by performing directed self-assembly and pattern transfer on a range of PS-b-PMMA materials having a full pitch from 27 to 18.5 nm. While directed self-assembly on chemical contrast patterns was successful with all the materials used in this study, clean removal of PMMA domains and subsequent pattern transfer could only be sustained down to 22 nm full pitch. We attribute this limitation to the width of the interface, which may represent more than half of the domain width for materials with a critical dimension below 10 nm. With the limit of pattern transfer for PS-b-PMMA set at ∼11 nm, we propose an integration scheme suitable for bit patterned media for densities above 1.6 Tdot/in2, which require features below this limit. Directed self-assembly was carried out on chemical contrast patterns made by a rotary e-beam lithography system, and pattern transfer was carried out to demonstrate fabrication of large area (up to 25 mm-...
120 citations
Patent•
01 Aug 2001TL;DR: In this article, high precision gap and orientation measurement methods between a template and a substrate used in imprint lithography processes are described. But they use broad-band light-based measuring techniques.
Abstract: Described are high precision gap and orientation measurement methods between a template and a substrate used in imprint lithography processes. Gap and orientation measurement methods presented here include uses of broad-band light based measuring techniques.
119 citations