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LOCOS
About: LOCOS is a research topic. Over the lifetime, 5014 publications have been published within this topic receiving 77145 citations.
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TL;DR: In this article, a novel strategy for preparing large-area oriented silicon nanowire arrays on silicon substrates at near room temperature by localized chemical etching is presented, which is based on metal-induced (either by Ag or Au) excessive local oxidation and dissolution of a silicon substrate in an aqueous fluoride solution.
Abstract: A novel strategy for preparing large-area, oriented silicon nanowire (SiNW) arrays on silicon substrates at near room temperature by localized chemical etching is presented. The strategy is based on metal-induced (either by Ag or Au) excessive local oxidation and dissolution of a silicon substrate in an aqueous fluoride solution. The density and size of the as-prepared SiNWs depend on the distribution of the patterned metal particles on the silicon surface. High-density metal particles facilitate the formation of silicon nanowires. Well-separated, straight nanoholes are dug along the Si block when metal particles are well dispersed with a large space between them. The etching technique is weakly dependent on the orientation and doping type of the silicon wafer. Therefore, SiNWs with desired axial crystallographic orientations and doping characteristics are readily obtained. Detailed scanning electron microscopy observations reveal the formation process of the silicon nanowires, and a reasonable mechanism is proposed on the basis of the electrochemistry of silicon and the experimental results.
650 citations
TL;DR: In this article, the authors examined the kinetics and mechanism of local oxidation of silicon and how factors such as the strength of the electric field, ambient humidity, and thickness of the oxide affect its rate and resolution.
Abstract: Atomic force microscope induced local oxidation of silicon is a process with a strong potential for use in proximal probe nanofabrication. Here we examine its kinetics and mechanism and how such factors as the strength of the electric field, ambient humidity, and thickness of the oxide affect its rate and resolution. Detection of electrochemical currents proves the anodization character of the process. Initial very fast oxidation rates are shown to slow down dramatically as a result of a self-limiting behavior resulting from the build up of stress and a reduction of the electric field strength. The lateral resolution is determined by the defocusing of the electric field in a condensed water film whose extent is a function of ambient humidity.
441 citations
TL;DR: In this paper, a method to bond silicon wafers directly at room temperature was developed, where surfaces of two silicon samples are activated by argon atom beam etching and brought into contact in a vacuum.
Abstract: A method to bond silicon wafers directly at room temperature was developed. In this method, surfaces of two silicon samples are activated by argon atom beam etching and brought into contact in a vacuum. By the infrared microscope and KOH etching method, no void at the bonded interface was detected in all the specimens tested. In the tensile test, fracture occurred not at the interface but mainly in the bulk of silicon. From these results, it is concluded that the method realizes strong and tight bonding at room temperature and is promising to assemble small parts made by the silicon wafer process.
373 citations
TL;DR: In this article, the optical properties of silicon nitride layers formed by the pyrolysis of a mixture of and are presented together with published data for materials to formulate a bonding model for and which quantitatively describes their optical characteristics.
Abstract: The optical properties of silicon nitride layers formed by the pyrolysis of a mixture of and are presented. These results are used together with published data for materials to formulate a bonding model for and which quantitatively describes their optical characteristics. The basic units of this structure are Si tetrahedra of the type in which the distribution of atoms for all possible is statistical for any given atom ratio.
362 citations