Low-k dielectric

About: Low-k dielectric is a research topic. Over the lifetime, 1302 publications have been published within this topic receiving 23254 citations.

Organic low K dielectric etch with NH3 chemistry

Abstract: A plasma etch process for organic low-k dielectric layers using NH 3 only, or NH 3 /H 2 or NH 3 /H 2 gases. A low k dielectric layer is formed over a substrate. A masking pattern is formed over the low k dielectric layer. The masking pattern has an opening. Using the invention's etch process, the low k dielectric layer is etched through the opening using the masking pattern as an etch mask. In a first embodiment, the etch process comprises: etching the low k dielectric layer by applying a plasma power and flowing only NH 3 gas. In a second embodiment, the etch process comprises: etching the low k dielectric layer by applying a plasma power and flowing only NH 3 /H 2 gas. In a third embodiment, the etch process comprises: etching the low k dielectric layer by applying a plasma power and flowing only NH 3 /N 2 gas. The invention's NH 3 containing plasma etch etches organic Low k materials unexpectedly fast. The invention's NH 3 only etch had a 30 to 80% high etch rate than N 2 /H 2 etches of low-k materials like Silk™.

Two-layer film for next generation damascene barrier application with good oxidation resistance

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.

Non-porous low-k dielectric films based on a new structural amorphous fluoropolymer.

Abstract: A non-porous and amorphous fluoropolymer PFN with low dielectric constant of 2.33 and dielectric loss less than 1.2 × 10(-3) is reported here. PFN also exhibits good mechanical properties and high thermostability. This study is a new example of a fully dense material showing a low k value and having good thermo/mechanical properties.

Device with low-k dielectric in close proximity thereto and its method of fabrication

Abstract: A semiconductor device with a low-k material in close proximity thereto and its fabrication method. The device includes a gate electrode overlying a substrate. An electrically conductive plug is provided immediately adjacent to the gate electrode and making electrical contact to the device. A low-k dielectric material is disposed in the space between the gate electrode and the electrically conductive plug whereby reducing the parasitic capacitance. Thus, higher density of devices can be formed without decreasing operating speed.

PECVD methods for producing ultra low-k dielectric films using UV treatment

Abstract: Methods of preparing low-k carbon-doped oxide (CDO) films having high mechanical strength are provided. The methods involve contacting the substrate with a CDO precursor to deposit the film typically using a plasma-enhanced chemical vapor deposition (PECVD) method. After the film is deposited, it is exposed to ultraviolet radiation in a manner that increases cross-linking and/or lowers the dielectric constant of the film. The resulting films have ultra-low dielectric constants, e.g., about 2.5, but also high mechanical strength, e.g., a modulus of at least about 7.5 GPa. In certain embodiments, a single hydrocarbon precursor is used, resulting in an improved process for obtaining ULK films that does not require dual (porogen and backbone) precursors.