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Low-noise amplifier

About: Low-noise amplifier is a research topic. Over the lifetime, 11915 publications have been published within this topic receiving 129866 citations. The topic is also known as: LNA.


Papers
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Journal ArticleDOI
TL;DR: In this article, a 1.5 GHz low noise amplifier (LNA) intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6/spl mu/m CMOS process.
Abstract: A 1.5-GHz low noise amplifier (LNA), intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6-/spl mu/m CMOS process. The amplifier provides a forward gain (S21) of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply. In this paper, we present a detailed analysis of the LNA architecture, including a discussion on the effects of induced gate noise in MOS devices.

1,463 citations

Journal ArticleDOI
TL;DR: In this article, a feed-forward noise-canceling technique is proposed to cancel the noise and distortion contributions of the matching device, which allows for designing wide-band impedance-matching amplifiers with noise figure (NF) well below 3 dB.
Abstract: Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-/spl mu/m standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. The LNA drains 14 mA from a 2.5-V supply and the die area is 0.3/spl times/0.25 mm/sup 2/.

749 citations

Journal ArticleDOI
TL;DR: An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter using a 0.18-/spl mu/m CMOS process achieves a power gain of 9.3 dB with an input match of -10 dB over the band.
Abstract: An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-/spl mu/m CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW.

714 citations

Journal ArticleDOI
TL;DR: It is shown that a CS-stage with deep submicron transistors can have high IIP2, because the nugsldr nuds cross-term in a two-dimensional Taylor approximation of the IDS(VGS, VDS) characteristic can cancel the traditionally dominant square-law term in the IDs(V GS) relation at practical gain values.
Abstract: An inductorless low-noise amplifier (LNA) with active balun is proposed for multi-standard radio applications between 100 MHz and 6 GHz. It exploits a combination of a common-gate (CGH) stage and an admittance-scaled common-source (CS) stage with replica biasing to maximize balanced operation, while simultaneously canceling the noise and distortion of the CG-stage. In this way, a noise figure (NF) close to or below 3 dB can be achieved, while good linearity is possible when the CS-stage is carefully optimized. We show that a CS-stage with deep submicron transistors can have high IIP2, because the nugsldr nuds cross-term in a two-dimensional Taylor approximation of the IDS(VGS, VDS) characteristic can cancel the traditionally dominant square-law term in the IDS(VGS) relation at practical gain values. Using standard 65 nm transistors at 1.2 V supply voltage, we realize a balun-LNA with 15 dB gain, NF +20 dBm, while simultaneously achieving an IIP3 > 0 dBm. The best performance of the balun is achieved between 300 MHz to 3.5 GHz with gain and phase errors below 0.3 dB and plusmn2 degrees. The total power consumption is 21 mW, while the active area is only 0.01 mm2.

579 citations

Proceedings ArticleDOI
13 Jun 1996
TL;DR: In this paper, a 1.5 GHz low noise amplifier for a Global Positioning System (GPS) receiver has been implemented in a 0.6 /spl mu/m CMOS process.
Abstract: A 1.5 GHz low noise amplifier for a Global Positioning System (GPS) receiver has been implemented in a 0.6 /spl mu/m CMOS process. This amplifier provides a forward gain of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply. To the authors' knowledge, this represents the lowest noise figure reported to date for a CMOS amplifier operating above 1 GHz.

558 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202388
2022289
2021211
2020296
2019409
2018372