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Showing papers on "Low-power electronics published in 1978"


Proceedings Article
01 Sep 1978
TL;DR: The well-controlled exponential ID(VS) characteristics of MOS transistors operating in weak inversion allow the realization of a very good bandgap reference compatible with CMOS technologies and operating with an input voltage as low as 1.3 V as mentioned in this paper.
Abstract: The well-controlled exponential ID(VS) characteristics of MOS transistors operating in weak inversion allows the realization of a very good bandgap reference compatible with CMOS technologies and operating with an input voltage as low as 1.3 V. Variations of less than 3 mV over more than 100oC have been obtained on a few samples and are certainly within reach for each circuit with an adjustment. The temperature range can be further extended by improving the design.

84 citations


Proceedings Article
01 Sep 1978
TL;DR: A 5 V n-channel enhancement/depletion circuit performs 8 lo Bit data aquisition and front-end digital control with adjustable setpoint and hysteresis in the 13 mm2 low-power chip.
Abstract: A 5 V n-channel enhancement/depletion circuit performs 8... lo Bit data aquisition and front-end digital control with adjustable setpoint and hysteresis. Special constant-slope conversion, BCD counting and sign-detection technique are employed in the 13 mm2 low-power chip.

Proceedings Article
J. Lohstroh1
01 Sep 1978
TL;DR: In this paper, a new 200 mV voltage swing LSI-logic, made in a standard Schottky process, with a better speed, a 10 times lower power dissipation, and a 6 times better packing density than low power TTL, is presented.
Abstract: ISL is a new 200 mV voltage swing LSI-logic, made in a standard Schottky process, with a better speed, a 10 times lower power dissipation, and a 6 times better packing density than low power Schottky TTL.