Showing papers on "Low-power electronics published in 1978"
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01 Sep 1978
TL;DR: The well-controlled exponential ID(VS) characteristics of MOS transistors operating in weak inversion allow the realization of a very good bandgap reference compatible with CMOS technologies and operating with an input voltage as low as 1.3 V as mentioned in this paper.
Abstract: The well-controlled exponential ID(VS) characteristics of MOS transistors operating in weak inversion allows the realization of a very good bandgap reference compatible with CMOS technologies and operating with an input voltage as low as 1.3 V. Variations of less than 3 mV over more than 100oC have been obtained on a few samples and are certainly within reach for each circuit with an adjustment. The temperature range can be further extended by improving the design.
84 citations
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01 Sep 1978
TL;DR: A 5 V n-channel enhancement/depletion circuit performs 8 lo Bit data aquisition and front-end digital control with adjustable setpoint and hysteresis in the 13 mm2 low-power chip.
Abstract: A 5 V n-channel enhancement/depletion circuit performs 8... lo Bit data aquisition and front-end digital control with adjustable setpoint and hysteresis. Special constant-slope conversion, BCD counting and sign-detection technique are employed in the 13 mm2 low-power chip.
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01 Sep 1978TL;DR: In this paper, a new 200 mV voltage swing LSI-logic, made in a standard Schottky process, with a better speed, a 10 times lower power dissipation, and a 6 times better packing density than low power TTL, is presented.
Abstract: ISL is a new 200 mV voltage swing LSI-logic, made in a standard Schottky process, with a better speed, a 10 times lower power dissipation, and a 6 times better packing density than low power Schottky TTL.