Showing papers on "Low-power electronics published in 2004"

Complementary tunneling transistor for low power application

Abstract: The metal oxide semiconductor field effect transistor (MOSFET) is scaling to a “tunneling epoch”, in which multiple leakage current induced by different tunneling effects exist. The complementary Si-based tunneling transistors are presented in this paper. The working principle of this device is investigated in detail. It is found that the band-to-band tunneling current is be controlled by the gate-to-source voltage. Due to the reverse biased p-i-n diode structure, an ultra-low leakage current is achieved. The sub-threshold swing of TFET is not limited by kt/q, which is the physical limit of the MOSFET. Using the CMOS compatible processes, the complementary TFETs (CTFET) are fabricated on one wafer. From a circuit point of view, the compatibility between TFET and MOSFET enables the transfer of CMOS circuits to CTFET circuits.

Microarchitectural techniques for power gating of execution units

Abstract: Leakage power is a major concern in current and future microprocessor designs. In this paper, we explore the potential of architectural techniques to reduce leakage through power-gating of execution units. This paper first develops parameterized analytical equations that estimate the break-even point for application of power-gating techniques. The potential for power gating execution units is then evaluated, for the range of relevant break-even points determined by the analytical equations, using a state-of-the-art out-of-order superscalar processor model. The power gating potential of the floating-point and fixed-point units of this processor is then evaluated using three different techniques to detect opportunities for entering sleep mode; ideal, time-based, and branch-misprediction-guided. Our results show that using the time-based approach, floating-point units can be put to sleep for up to 28% of the execution cycles at a performance loss of 2%. For the more difficult to power-gate fixed-point units, the branch misprediction guided technique allows the fixed-point units to be put to sleep for up to 40% more of the execution cycles compared to the simpler time-based technique, with similar performance impact. Overall, our experiments demonstrate that architectural techniques can be used effectively in power-gating execution units.

Razor: circuit-level correction of timing errors for low-power operation

Abstract: Dynamic voltage scaling is one of the more effective and widely used methods for power-aware computing. We present a DVS approach that uses dynamic detection and correction of circuit timing errors to tune processor supply voltage and eliminate the need for voltage margins

Ultra low-voltage low-power CMOS 4-2 and 5-2 compressors for fast arithmetic circuits

Abstract: This paper presents several architectures and designs of low-power 4-2 and 5-2 compressors capable of operating at ultra low supply voltages. These compressor architectures are anatomized into their constituent modules and different static logic styles based on the same deep submicrometer CMOS process model are used to realize them. Different configurations of each architecture, which include a number of novel 4-2 and 5-2 compressor designs, are prototyped and simulated to evaluate their performance in speed, power dissipation and power-delay product. The newly developed circuits are based on various configurations of the novel 5-2 compressor architecture with the new carry generator circuit, or existing architectures configured with the proposed circuit for the exclusive OR (XOR) and exclusive NOR ( XNOR) [XOR-XNOR] module. The proposed new circuit for the XOR-XNOR module eliminates the weak logic on the internal nodes of pass transistors with a pair of feedback PMOS-NMOS transistors. Driving capability has been considered in the design as well as in the simulation setup so that these 4-2 and 5-2 compressor cells can operate reliably in any tree structured parallel multiplier at very low supply voltages. Two new simulation environments are created to ensure that the performances reflect the realistic circuit operation in the system to which these cells are integrated. Simulation results show that the 4-2 compressor with the proposed XOR-XNOR module and the new fast 5-2 compressor architecture are able to function at supply voltage as low as 0.6 V, and outperform many other architectures including the classical CMOS logic compressors and variants of compressors constructed with various combinations of recently reported superior low-power logic cells.

A very low power CMOS mixed-signal IC for implantable pacemaker applications

Abstract: Low power consumption is crucial for medical implant devices. A single-chip, very-low-power interface IC used in implantable pacemaker systems is presented. It contains amplifiers, filters, ADCs, battery management system, voltage multipliers, high voltage pulse generators, programmable logic and timing control. A few circuit techniques are proposed to achieve nanopower circuit operations within submicron CMOS process. Subthreshold transistor designs and switched-capacitor circuits are widely used. The 200 k transistor IC occupies 49 mm/sup 2/, is fabricated in a 0.5-/spl mu/m two-poly three-metal multi-V/sub t/ process, and consumes 8 /spl mu/W.

A CMOS direct injection-locked oscillator topology as high-frequency low-power frequency divider

Abstract: An injection-locked oscillator topology is presented, based on MOS switches directly coupled to the LC tank of well-known LC oscillators. The direct injection-locking scheme features wide locking ranges, a very low input capacitance, and highest frequency capability. The direct locking and the tradeoff between power consumption and tank quality factor is verified through three test circuits in 0.13-/spl mu/m standard CMOS, aiming at input frequency ranges of 50, 40, and 15 GHz. The 40- and 50-GHz dividers consume 3 mW with locking ranges of 80 MHz and 1.5 GHz. The 15-GHz divider consumes 23 mW and features a locking range of 2.8 GHz.

Fully integrated wideband high-current rectifiers for inductively powered devices

Abstract: This paper describes the design and implementation of fully integrated rectifiers in BiCMOS and standard CMOS technologies for rectifying an externally generated RF carrier signal in inductively powered wireless devices, such as biomedical implants, radio-frequency identification (RFID) tags, and smartcards to generate an on-chip dc supply. Various full-wave rectifier topologies and low-power circuit design techniques are employed to decrease substrate leakage current and parasitic components, reduce the possibility of latch-up, and improve power transmission efficiency and high-frequency performance of the rectifier block. These circuits are used in wireless neural stimulating microsystems, fabricated in two processes: the University of Michigan's 3-/spl mu/m 1M/2P N-epi BiCMOS, and the AMI 1.5-/spl mu/m 2M/2P N-well standard CMOS. The rectifier areas are 0.12-0.48 mm/sup 2/ in the above processes and they are capable of delivering >25mW from a receiver coil to the implant circuitry. The performance of these integrated rectifiers has been tested and compared, using carrier signals in 0.1-10-MHz range.

Minimizing power consumption in scan testing: pattern generation and DFT techniques

Abstract: It is a well-known phenomenon that test power consumption may exceed that of functional operation. ICs have been observed to fail at specified minimum operating voltages during structured at-speed testing while passing all other forms of test. Methods exist to reduce power without dramatically increasing pattern volume for a given coverage. We present case study information on ATPG- and DFT-based solutions for test power reduction.

A 180mV FFT processor using subthreshold circuit techniques

Abstract: Minimizing energy requires scaling supply voltages below device thresholds. Logic and memory design techniques allowing subthreshold operation are developed and demonstrated. The fabricated 1024-point FFT processor operates down to 180mV using a standard 0.18/spl mu/m CMOS logic process while using 155nJ/FFT at the optimal operating point.

SRAM leakage suppression by minimizing standby supply voltage

Abstract: Suppressing the leakage current in memories is critical in low-power design. By reducing the standby supply voltage (V/sub DD/) to its limit, which is the data retention voltage (DRV), leakage power can be substantially reduced. This paper explores how low DRV can be in a standard low leakage SRAM module and analyzes how DRV is affected by parameters such as process variations, chip temperature, and transistor sizing. An analytical model for DRV as a function of process and design parameters is presented, and forms the basis for further design space explorations. This model is verified using simulations as well as measurements from a 4 kB SRAM chip in a 0.13 /spl mu/m technology. It is demonstrated that an SRAM cell state can be preserved at sub-300 mV standby VDD, with more than 90% leakage power savings.

A 1-V 140-/spl mu/W 88-dB audio sigma-delta modulator in 90-nm CMOS

Abstract: A single-loop third-order switched-capacitor /spl Sigma/-/spl Delta/ modulator in 90-nm standard digital CMOS technology is presented. The design is intended to minimize the power consumption in a low-voltage environment. A load-compensated OTA with rail-to-rail output swing and gain enhancement is chosen in this design, which provides higher power efficiency than the two-stage OTA. To lower the power consumption further, class-AB operation is also adapted in the OTA design. Due to the relatively low threshold voltage of the advanced technology, no clock bootstrapping circuits are needed to drive the switches and the power consumption of the digital circuits is reduced. All the capacitors are implemented using multilayer metal-wall structure, which can provide high-density capacitance. The modulator achieves 88-dB dynamic range in 20-kHz signal bandwidth with an oversampling ratio of 100. The power consumption is 140 /spl mu/W under 1-V supply voltage and the chip core size is 0.18 mm/sup 2/.

Characterizing and modeling minimum energy operation for subthreshold circuits

Abstract: Subthreshold operation is emerging as an energy-saving approach to many new applications. This paper examines energy minimization for circuits operating in the subthreshold region. We show the dependence of the optimum V/sub DD/ for a given technology on design characteristics and operating conditions. Solving equations for total energy provides an analytical solution for the Optimum VDD and V/sub T/ to minimize energy for a given frequency in subthreshold operation. SPICE simulations of a 200K transistor FIR filter confirm the analytical solution and the dependence of the minimum energy operating point on important parameters.

A novel multiplexer-based low-power full adder

Abstract: The 1-bit full adder circuit is a very important component in the design of application specific integrated circuits. This paper presents a novel low-power multiplexer-based 1-bit full adder that uses 12 transistors (MBA-12T). In addition to reduced transition activity and charge recycling capability, this circuit has no direct connections to the power-supply nodes, leading to a noticeable reduction in short-current power consumption. Intensive HSPICE simulation shows that the new adder has more than 26% in power savings over conventional 28-transistor CMOS adder and it consumes 23% less power than 10-transistor adders (SERF and 10T ) and is 64% faster.

LECTOR: a technique for leakage reduction in CMOS circuits

Abstract: In CMOS circuits, the reduction of the threshold voltage due to voltage scaling leads to increase in subthreshold leakage current and hence static power dissipation. We propose a novel technique called LECTOR for designing CMOS gates which significantly cuts down the leakage current without increasing the dynamic power dissipation. In the proposed technique, we introduce two leakage control transistors (a p-type and a n-type) within the logic gate for which the gate terminal of each leakage control transistor (LCT) is controlled by the source of the other. In this arrangement, one of the LCTs is always "near its cutoff voltage" for any input combination. This increases the resistance of the path from V/sub dd/ to ground, leading to significant decrease in leakage currents. The gate-level netlist of the given circuit is first converted into a static CMOS complex gate implementation and then LCTs are introduced to obtain a leakage-controlled circuit. The significant feature of LECTOR is that it works effectively in both active and idle states of the circuit, resulting in better leakage reduction compared to other techniques. Further, the proposed technique overcomes the limitations posed by other existing methods for leakage reduction. Experimental results indicate an average leakage reduction of 79.4% for MCNC'91 benchmark circuits.

Power consumption breakdown on a modern laptop

Abstract: The purpose of this work was to obtain a component-wise breakdown of the power consumption a modern laptop. We measured the power usage of the key components in an IBM ThinkPad R40 laptop using an Agilent Oscilloscope and current probes. We obtained the power consumption for the CPU, optical drive, hard disk, display, graphics card, memory, and wireless card subsystems–either through direct measurement or subtractive measurement and calculation. Moreover, we measured the power consumption of each component for a variety of workloads. We found that total system power consumption varies a lot (8 W to 30 W) depending on the workload, and moreover that the distribution of power consumption among the components varies even more widely. We also found that though power saving techniques such as DVS can reduce CPU power considerably, the total system power is still dominated by CPU power in the case of CPU intensive workloads. The display is the other main source of power consumption in a laptop; it dominates when the CPU is idle. We also found that reducing the backlight brightness can reduce the system power significantly, more than any other display power saving techniques. Finally, we observed OS differences in the power consumption.

Dynamic voltage and frequency management for a low-power embedded microprocessor

Abstract: High-performance and low-power microprocessors are key to PDA applications. A dynamic voltage and frequency management (DVFM) scheme with leakage power compensation effect is introduced in a microprocessor with 128-bit wideband 64-Mb embedded DRAM. The DVFM scheme autonomously controls clock frequency from 8 to 123 MHz in steps of 0.5 MHz and also adaptively controls supply voltage from 0.9 to 1.6 V in steps of 5 mV, achieving 82% power reduction in personal information management scheduler application and 40% power reduction in MPEG4 movie playback. This low-power embedded microprocessor, fabricated with 0.18-/spl mu/m CMOS embedded DRAM technology, enables high-performance operations such as audio and video applications. As process technology shrinks, this adaptive leakage power compensation scheme will become more important in realizing high-performance and low-power mobile consumer applications.

All-digital low-power CMOS pulse generator for UWB system

Abstract: An all-digital CMOS ultra-wideband (UWB) pulse generator which complies with FCC regulations is presented. The proposed pulse generator generates a single UWB pulse satisfying FCC regulations without any filtering. The average power consumption of the whole circuit is 15.4 mW and 675 /spl mu/W at the pulse repetition frequency of 500 and 1 MHz, respectively.

Managing standby and active mode leakage power in deep sub-micron design

Abstract: Scaling has allowed rising transistor counts per die and increases leakage at an exponential rate, making power a primary constraint in all integrated circuit designs. Future designs must address emerging leakage components due to direct band to band tunneling, through MOSFET oxides and at steep junction doping gradients. In this paper, we describe circuit design techniques for managing leakage power, both during standby and for limiting the leakage power contribution during active operation. The efficacy, design effort, and process ramifications of different approaches are examined. The schemes are primarily aimed at hand-held devices such as cell phones, since the needs for low power are most acute in these markets due to limited battery capacity.

Level conversion for dual-supply systems

Abstract: Dual-supply voltage design using a clustered voltage scaling (CVS) scheme is an effective approach to reduce chip power. The optimal CVS design relies on a level converter implemented in a flip-flop to minimize energy, delay, and area penalties due to level conversion. Additionally, circuit robustness against supply bounce is a key property that differentiates good level converter design. Novel flip-flops presented in this paper incorporate a half-latch level converter and a precharged level converter. These flip-flops are optimized in the energy-delay design space to achieve over 30% reduction of energy-delay product and about 10% savings of total power in a CVS design as compared to the conventional flip-flop. These benefits are accompanied by 24% flip-flop robustness improvement leading to 13% delay spread reduction in a CVS critical path. The proposed flip-flops also show 18% layout area reduction. Advantages of level conversion in a flip-flop over asynchronous level conversion in combinational logic are also discussed in terms of delay penalty and its sensitivity to supply bounce.

Gate oxide leakage current analysis and reduction for VLSI circuits

Abstract: In this paper we address the growing issue of gate oxide leakage current (I/sub gate/) at the circuit level. Specifically, we develop a fast approach to analyze the total leakage power of a large circuit block, considering both I/sub gate/ and subthreshold leakage (I/sub sub/). The interaction between I/sub sub/ and I/sub gate/ complicates analysis in arbitrary CMOS topologies and we propose simple and accurate heuristics based on lookup tables to quickly estimate the state-dependent total leakage current for arbitrary circuit topologies. We apply this method to a number of benchmark circuits using a projected 100-nm technology and demonstrate accuracy within 0.09% of SPICE on average with a four order of magnitude speedup. We then make several observations on the impact of I/sub gate/ in designs that are standby power limited, including the role of device ordering within a stack and the differing state dependencies for NOR versus NAND topologies. Based on these observations, we propose the use of pin reordering as a means to reduce I/sub gate/. We find that for technologies with appreciable I/sub gate/, this technique is more effective at reducing total leakage current in standby mode than state assignment, which is often used for I/sub sub/ reduction.

Fine-grained dynamic voltage and frequency scaling for precise energy and performance trade-off based on the ratio of off-chip access to on-chip computation times

Abstract: This paper presents an intra-process dynamic voltage and frequency scaling (DVFS) technique targeted toward non real-time applications running on an embedded system platform. The key idea is to make use of runtime information about the external memory access statistics in order to perform CPU voltage and frequency scaling with the goal of minimizing the energy consumption while translucently controlling the performance penalty. The proposed DVFS technique relies on dynamically-constructed regression models that allow the CPU to calculate the expected workload and slack time for the next time slot, and thus, adjust its voltage and frequency in order to save energy while meeting soft timing constraints. This is in turn achieved by estimating and exploiting the ratio of the total off-chip access time to the total on-chip computation time. The proposed technique has been implemented on an XScale-based embedded system platform and actual energy savings have been calculated by current measurements in hardware. For memory-bound programs, a CPU energy saving of more than 70% with a performance degradation of 12% was achieved. For CPU-bound programs, 15/spl sim/60% CPU energy saving was achieved at the cost of 5-20% performance penalty.

A very low-power quadrature VCO with back-gate coupling

Abstract: A new quadrature voltage-controlled oscillator (QVCO) topology is proposed where the back-gates of the core transistors are used as coupling terminals. The use of back-gates reduces the power dissipation and removes the additional noise contributions compare to the conventional coupling transistor based topology. The advantages of the proposed QVCO topology in comparison with prior works are exploited based on simulation. A QVCO based on the proposed topology with additional design ideas has been implemented using a 0.18-/spl mu/m triple-well technology for 1 GHz-band operation, and measurement shows the phase noise of -120 dBc/Hz at 1-MHz offset with output power of 2.5 dBm, while dissipating only 3 mA for the whole QVCO from 1.8-V supply.

Double gate-MOSFET subthreshold circuit for ultralow power applications

Abstract: In this paper, we propose MOSFETs that are suitable for subthreshold digital circuit operations. The MOSFET subthreshold circuit would use subthreshold leakage current as the operating current to achieve ultralow power consumption when speed is not of utmost importance. We derive the theoretical limit of delay and energy consumption in MOSFET subthreshold circuit, and show that devices that have an ideal subthreshold slope are optimal for subthreshold operations due to the smaller gate capacitance, as well as the higher current. The analysis suggests that a double gate (DG)-MOSFET is promising for subthreshold operations due to its near-ideal subthreshold slope. The results of our investigation into the optimal device characteristics for DG-MOSFET subthreshold operation show that devices with longer channel length (compared to minimum gate length) can be used for robust subthreshold operation without any loss of performance. In addition, it is shown that the source and drain structure of DG-MOSFET can be simplified for subthreshold operations since source and drain need not be raised to reduce the parasitic resistance.

AC boosting compensation scheme for low-power multistage amplifiers

Abstract: A new power-efficient frequency compensation scheme is proposed, called the AC Boosting Compensation (ACBC) scheme. An ac path is added to the internal stage of the conventional multistage amplifier, which improves significantly the performance such as the gain-bandwidth product and the slew rate without increasing the total power consumption. Analysis shows that the stability can be perfectly ensured. Two three-stage amplifiers have been implemented with and without a feed-forward stage, and fabricated in a 0.35-/spl mu/m CMOS process. The ACBC amplifiers driving a 500-pF capacitance achieved 1.9-MHz gain-bandwidth product (GBW) dissipating only 0.3-mW power with a 2-V supply. An amplifier based on conventional nested Miller compensation (NMC) could only achieve 0.11-MHz GBW with the same load and power conditions, which shows an improvement of a factor of 17 in GBW.

A low-power 20-GHz 52-dB/spl Omega/ transimpedance amplifier in 80-nm CMOS

Abstract: This paper describes the design of a transimpedance amplifier (TIA) for a low-power, short-distance, high-density fiber-optic interconnect communication system. The single-ended circuit has been designed in an 80-nm digital CMOS process and consumes only 2.2 mW from a 1-V supply. The measured results show a transimpedance gain of 52 dB/spl Omega/ and a large bandwidth of 20 GHz. This work presents the highest bandwidth at the lowest power consumption for CMOS transimpedance amplifiers reported to date.

An ultra-low power 900 MHz RF transceiver for wireless sensor networks

Abstract: A 900 MHz, ultra-low power RF transceiver is presented for wireless sensor networks. It radiates -6 dBm in transmit mode and has a receive sensitivity of -94 dBm while consuming less than 1.3 mW in either mode from a 3 volt battery. Two of these transceivers have been demonstrated communicating over 16 meters through walls at a bit rate of 20 kbps while using only 4 off-chip components.

A 6b 600MHz 10mW ADC array in digital 90nm CMOS

Abstract: A 6b converter array operates at a 600MHz clock frequency with input signals up to 600MHz and only 10mW power consumption. The array consists of 8 interleaved successive approximation converters implemented in a 90nm digital CMOS technology.

Low supply voltage high-performance CMOS current mirror with low input and output voltage requirements

Abstract: This paper presents a scheme for the efficient implementation of a low supply voltage continuous-time high-performance CMOS current mirror with low input and output voltage requirements. This circuit combines a shunt input feedback and a regulated cascode output stage to achieve low input resistance and very high output resistance. It can be used as a high-precision current mirror in analog and mixed signal circuits with a power supply close to a transistor's threshold voltage. The proposed current mirror has been simulated and a bandwidth of 40 MHz has been obtained. An experimental chip prototype has been sent for fabrication and has been experimentally verified, obtaining 0.15-V input-output voltage requirements, 100-/spl Omega/ input resistance, and more than 200-M/spl Omega/ (G/spl Omega/ ideally) output resistance with a 1.2-V supply in a standard CMOS technology.

Ultralow-power adiabatic circuit semi-custom design

Abstract: This brief shows that a conventional semi-custom design-flow based on a positive feedback adiabatic logic (PFAL) cell library allows any VLSI designer to design and verify complex adiabatic systems (e.g., arithmetic units) in a short time and easy way, thus, enjoying the energy reduction benefits of adiabatic logic. A family of semi-custom PFAL carry lookahead adders and parallel multipliers were designed in a 0.6-/spl mu/m CMOS technology and verified. Post-layout simulations show that semi-custom adiabatic arithmetic units can save energy a factor 17 at 10 MHz and about 7 at 100 MHz, as compared to a logically equivalent static CMOS implementation. The energy saving obtained is also better if compared to other custom adiabatic circuit realizations and maintains high values (3/spl divide/6) even when the losses in power-clock generation are considered.

Functional level power analysis: an efficient approach for modeling the power consumption of complex processors

Abstract: A high-level consumption estimation methodology and its associated tool, SoftExplorer, are presented. The estimation methodology uses a functional modeling of the processor combined with a parametric model to allow the designer to estimate the power consumption when the embedded software is executed on the target. SoftExplorer uses as input the assembly code generated by the compiler; its efficiency is compared to SimplePower's approach. Results for different processors (TI C62, C67, C55, and ARM7) and for several DSP applications provide an average error less than 5%.