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Magnetic anisotropy

About: Magnetic anisotropy is a research topic. Over the lifetime, 36978 publications have been published within this topic receiving 686556 citations.


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TL;DR: In this paper, the effect of shape anisotropy on magnetization curves was studied for the case of ellipsoidal spheroids of revolution (e.g., ellipses of revolution).
Abstract: The Becker-Kersten treatment of domain boundary movements is widely applicable in the interpretation of magnetization curves, but it does not account satisfactorily for the higher coercivities obtained, for example, in permanent magnet alloys. It is suggested that in many ferromagnetic materials there may occur ‘particles’ (this term including atomic segregates or ‘islands’ in alloys), distinct in magnetic character from the general matrix, and below the critical size, depending on shape, for which domain boundary formation is energetically possible. For such single-domain particles, change of magnetization can take place only by rotation of the magnetization vector, I O . As the field changes continuously, the resolved magnetization, I H , may change discontinuously at critical values, H O , of the field. The character of the magnetization curves depends on the degree of magnetic anisotropy of the particle, and on the orientation of ‘easy axes’ with respect to the field. The magnetic anisotropy may arise from the shape of the particle, from magneto-crystalline effects, and from strain. A detailed quantitative treatment is given of the effect of shape anisotropy when the particles have the form of ellipsoids of revolution (§§ 2, 3, 4), and a less detailed treatment for the general ellipsoidal form (§ 5). For the first it is convenient to use the non-dimensional parameter such that h = H /(| N a - N b |) I O , N a and N b being the demagnetization coefficients along the polar and equatorial axes. The results are presented in tables and diagrams giving the variation with h of I H / I O . For the special limiting form of the oblate spheroid there is no hysteresis. For the prolate spheroid, as the orientation angle, θ , varies from 0 to 90°, the cyclic magnetization curves change from a rectangular form with | h O | = 1, to a linear non-hysteretic form, with an interesting sequence of intermediate forms. Exact expressions are obtained for the dependence of h θ on θ , and curves for random distribution are computed. All the numerical results are applicable when the anisotropy is due to longitudinal stress, when h = HI 0 /3λδ, where λ is the saturation magnetostriction coefficient, and δ the stress. The results also apply to magneto-crystalline anisotropy in the important and representative case in which there is a unique axis of easy magnetization as for hexagonal cobalt. Estimates are made of the magnitude of the effect of the various types of anisotropy. For iron the maximum coercivities, for the most favourable orientation, due to the magneto-crystalline and strain effects are about 400 and 600 respectively. These values are exceeded by those due to the shape effect in prolate spheroids if the dimensional ratio, m , is greater than 1·1; for m = 10, the corresponding value would be about 10,000 (§7). A fairly precise estimate is made of the lower limit for the equatorial diameter of a particle in the form of a prolate spheroid below which boundary formation cannot occur. As m varies from 1 (the sphere) to 10, this varies from 1·5 to 6·1 x 10 -6 for iron, and from 6·2 to 25 x 10 -6 for nickel (§ 6). A discussion is given (§ 7) of the application of these results to ( a ) non-ferromagnetic metals and alloys containing ferromagnetic ‘impurities’, ( b ) powder magnets, ( e ) high coeravity alloys of the dispersion hardening type. In connexion with ( c ) the possible bearing on the effects of cooling in a magnetic field is indicated.

4,382 citations

Journal ArticleDOI
07 Jun 2017-Nature
TL;DR: Xu et al. as mentioned in this paper used magneto-optical Kerr effect microscopy to show that monolayer chromium triiodide (CrI3) is an Ising ferromagnet with out-of-plane spin orientation.
Abstract: Magneto-optical Kerr effect microscopy is used to show that monolayer chromium triiodide is an Ising ferromagnet with out-of-plane spin orientation. The question of what happens to the properties of a material when it is thinned down to atomic-scale thickness has for a long time been a largely hypothetical one. In the past decade, new experimental methods have made it possible to isolate and measure a range of two-dimensional structures, enabling many theoretical predictions to be tested. But it has been a particular challenge to observe intrinsic magnetic effects, which could shed light on the longstanding fundamental question of whether intrinsic long-range magnetic order can robustly exist in two dimensions. In this issue of Nature, two groups address this challenge and report ferromagnetism in atomically thin crystals. Xiang Zhang and colleagues measured atomic layers of Cr2Ge2Te6 and observed ferromagnetic ordering with a transition temperature that, unusually, can be controlled using small magnetic fields. Xiaodong Xu and colleagues measured atomic layers of CrI3 and observed ferromagnetic ordering that, remarkably, was suppressed in double layers of CrI3, but restored in triple layers. The two studies demonstrate a platform with which to test fundamental properties of purely two-dimensional magnets. Since the discovery of graphene1, the family of two-dimensional materials has grown, displaying a broad range of electronic properties. Recent additions include semiconductors with spin–valley coupling2, Ising superconductors3,4,5 that can be tuned into a quantum metal6, possible Mott insulators with tunable charge-density waves7, and topological semimetals with edge transport8,9. However, no two-dimensional crystal with intrinsic magnetism has yet been discovered10,11,12,13,14; such a crystal would be useful in many technologies from sensing to data storage15. Theoretically, magnetic order is prohibited in the two-dimensional isotropic Heisenberg model at finite temperatures by the Mermin–Wagner theorem16. Magnetic anisotropy removes this restriction, however, and enables, for instance, the occurrence of two-dimensional Ising ferromagnetism. Here we use magneto-optical Kerr effect microscopy to demonstrate that monolayer chromium triiodide (CrI3) is an Ising ferromagnet with out-of-plane spin orientation. Its Curie temperature of 45 kelvin is only slightly lower than that of the bulk crystal, 61 kelvin, which is consistent with a weak interlayer coupling. Moreover, our studies suggest a layer-dependent magnetic phase, highlighting thickness-dependent physical properties typical of van der Waals crystals17,18,19. Remarkably, bilayer CrI3 displays suppressed magnetization with a metamagnetic effect20, whereas in trilayer CrI3 the interlayer ferromagnetism observed in the bulk crystal is restored. This work creates opportunities for studying magnetism by harnessing the unusual features of atomically thin materials, such as electrical control for realizing magnetoelectronics12, and van der Waals engineering to produce interface phenomena15.

3,802 citations

Journal ArticleDOI
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Abstract: Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal stability and low critical current for current-induced magnetization switching. To attain perpendicular anisotropy, a number of material systems have been explored as electrodes, which include rare-earth/transition-metal alloys, L1(0)-ordered (Co, Fe)-Pt alloys and Co/(Pd, Pt) multilayers. However, none of them so far satisfy high thermal stability at reduced dimension, low-current current-induced magnetization switching and high tunnel magnetoresistance ratio all at the same time. Here, we use interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane anisotropy. This approach requires no material other than those used in conventional in-plane-anisotropy MTJs. The perpendicular MTJs consisting of Ta/CoFeB/MgO/CoFeB/Ta show a high tunnel magnetoresistance ratio, over 120%, high thermal stability at dimension as low as 40 nm diameter and a low switching current of 49 microA.

3,169 citations

Journal ArticleDOI
11 Aug 2011-Nature
TL;DR: To prove the potential of in-plane current switching for spintronic applications, this work constructs a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures.
Abstract: Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.

2,099 citations

Journal ArticleDOI
TL;DR: In this paper, a mathematical model of the hysteresis mechanisms in ferromagnets is presented based on existing ideas of domain wall motion including both bending and translation, which gives rise to a frictional force opposing the movement of domain walls.

1,989 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023297
2022634
2021895
2020940
2019901
2018982