Topic
Magnetic domain
About: Magnetic domain is a research topic. Over the lifetime, 21452 publications have been published within this topic receiving 393999 citations. The topic is also known as: magnetic domains.
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TL;DR: In this article, the role of spin pumping in layered structures is discussed and the main body of the theory is semiclassical and based on a mean-field Stoner or spin-density functional picture, but quantum-size effects and electron-electron correlations are also discussed.
Abstract: Two complementary effects modify the GHz magnetization dynamics of nanoscale heterostructures of ferromagnetic and normal materials relative to those of the isolated magnetic constituents. On the one hand, a time-dependent ferromagnetic magnetization pumps a spin angular-momentum flow into adjacent materials and, on the other hand, spin angular momentum is transferred between ferromagnets by an applied bias, causing mutual torques on the magnetizations. These phenomena are manifestly nonlocal: they are governed by the entire spin-coherent region that is limited in size by spin-flip relaxation processes. This review presents recent progress in understanding the magnetization dynamics in ferromagnetic heterostructures from first principles, focusing on the role of spin pumping in layered structures. The main body of the theory is semiclassical and based on a mean-field Stoner or spin-density-functional picture, but quantum-size effects and the role of electron-electron correlations are also discussed. A growing number of experiments support the theoretical predictions. The formalism should be useful for understanding the physics and for engineering the characteristics of small devices such as magnetic random-access memory elements.
1,051 citations
TL;DR: How currents can generate torques that affect the magnetic orientation and the reciprocal effect in a wide variety of magnetic materials and structures is explained.
Abstract: The magnetization of a magnetic material can be reversed by using electric currents that transport spin angular momentum. In the reciprocal process a changing magnetization orientation produces currents that transport spin angular momentum. Understanding how these processes occur reveals the intricate connection between magnetization and spin transport, and can transform technologies that generate, store or process information via the magnetization direction. Here we explain how currents can generate torques that affect the magnetic orientation and the reciprocal effect in a wide variety of magnetic materials and structures. We also discuss recent state-of-the-art demonstrations of current-induced torque devices that show great promise for enhancing the functionality of semiconductor devices.
1,049 citations
TL;DR: This work designed cobalt-based multilayered thin thin metals in which the cobalt layer is sandwiched between two heavy metals and so provides additive interfacial Dzyaloshinskii-Moriya interactions (DMIs), which reach a value close to 2 mJ m(-2) in the case of the Ir|Co|Pt asymmetric multilayers.
Abstract: Facing the ever-growing demand for data storage will most probably require a new paradigm. Nanoscale magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films in which the cobalt layer is sandwiched between two heavy metals and so provides additive interfacial Dzyaloshinskii-Moriya interactions (DMIs), which reach a value close to 2 mJ m(-2) in the case of the Ir|Co|Pt asymmetric multilayers. Using a magnetization-sensitive scanning X-ray transmission microscopy technique, we imaged small magnetic domains at very low fields in these multilayers. The study of their behaviour in a perpendicular magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the large DMI. This discovery of stable sub-100 nm individual skyrmions at room temperature in a technologically relevant material opens the way for device applications in the near future.
1,023 citations
TL;DR: In this paper, a review of magnetoelectric domain walls is presented, focusing on magneto-electrics and multiferroics but making comparisons where possible with magnetic domains and domain walls.
Abstract: Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark contrast to the more complex Bloch walls or N\'eel walls in magnets. Only within the past decade and with the introduction of atomic-resolution studies via transmission electron microscopy, electron holography, and atomic force microscopy with polarization sensitivity has their real complexity been revealed. Additional phenomena appear in recent studies, especially of magnetoelectric materials, where functional properties inside domain walls are being directly measured. In this paper these studies are reviewed, focusing attention on ferroelectrics and multiferroics but making comparisons where possible with magnetic domains and domain walls. An important part of this review will concern device applications, with the spotlight on a new paradigm of ferroic devices where the domain walls, rather than the domains, are the active element. Here magnetic wall microelectronics is already in full swing, owing largely to the work of Cowburn and of Parkin and their colleagues. These devices exploit the high domain wall mobilities in magnets and their resulting high velocities, which can be supersonic, as shown by Kreines' and co-workers 30 years ago. By comparison, nanoelectronic devices employing ferroelectric domain walls often have slower domain wall speeds, but may exploit their smaller size as well as their different functional properties. These include domain wall conductivity (metallic or even superconducting in bulk insulating or semiconducting oxides) and the fact that domain walls can be ferromagnetic while the surrounding domains are not.
1,022 citations
TL;DR: Network of interacting submicrometer magnetic dots are used to perform logic operations and propagate information at room temperature, which offers a several thousandfold increase in integration density and a hundredfold reduction in power dissipation over current microelectronic technology.
Abstract: All computers process information electronically. A processing method based on magnetism is reported here, in which networks of interacting submicrometer magnetic dots are used to perform logic operations and propagate information at room temperature. The logic states are signaled by the magnetization direction of the single-domain magnetic dots; the dots couple to their nearest neighbors through magnetostatic interactions. Magnetic solitons carry information through the networks, and an applied oscillating magnetic field feeds energy into the system and serves as a clock. These networks offer a several thousandfold increase in integration density and a hundredfold reduction in power dissipation over current microelectronic technology.
1,006 citations