Showing papers on "Magnetization published in 2010"

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

Abstract: Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal stability and low critical current for current-induced magnetization switching. To attain perpendicular anisotropy, a number of material systems have been explored as electrodes, which include rare-earth/transition-metal alloys, L1(0)-ordered (Co, Fe)-Pt alloys and Co/(Pd, Pt) multilayers. However, none of them so far satisfy high thermal stability at reduced dimension, low-current current-induced magnetization switching and high tunnel magnetoresistance ratio all at the same time. Here, we use interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane anisotropy. This approach requires no material other than those used in conventional in-plane-anisotropy MTJs. The perpendicular MTJs consisting of Ta/CoFeB/MgO/CoFeB/Ta show a high tunnel magnetoresistance ratio, over 120%, high thermal stability at dimension as low as 40 nm diameter and a low switching current of 49 microA.

Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer

Abstract: Methods to manipulate the magnetization of ferromagnets by means of local electric fields or current-induced spin transfer torque allow the design of integrated spintronic devices with reduced dimensions and energy consumption compared with conventional magnetic field actuation. An alternative way to induce a spin torque using an electric current has been proposed based on intrinsic spin-orbit magnetic fields and recently realized in a strained low-temperature ferromagnetic semiconductor. Here we demonstrate that strong magnetic fields can be induced in ferromagnetic metal films lacking structure inversion symmetry through the Rashba effect. Owing to the combination of spin-orbit and exchange interactions, we show that an electric current flowing in the plane of a Co layer with asymmetric Pt and AlO(x) interfaces produces an effective transverse magnetic field of 1 T per 10(8) A cm(-2). Besides its fundamental significance, the high efficiency of this process makes it a realistic candidate for room-temperature spintronic applications.

Simple models for dynamic hysteresis loops calculation: Application to hyperthermia optimization

Abstract: To optimize the heating properties of magnetic nanoparticles (MNPs) in magnetic hyperthermia applications, it is necessary to calculate the area of their hysteresis loops in an alternating magnetic field. The three types of theories suitable for describing the hysteresis loops of MNPs are presented and compared to numerical simulations: equilibrium functions, Stoner-Wohlfarth model based theories (SWMBTs) and linear response theory (LRT). Suitable formulas to calculate the hysteresis area of major cycles are deduced from SWMBTs and from numerical simulations; the domain of validity of the analytical formula is explicitly studied. In the case of minor cycles, the hysteresis area calculations are based on the LRT. A perfect agreement between LRT and numerical simulations of hysteresis loops is obtained. The domain of validity of the LRT is explicitly studied. Formulas to calculate the hysteresis area at low field valid for any anisotropy of the MNP are proposed. Numerical simulations of the magnetic field dependence of the area show it follows power-laws with a large range of exponents. Then, analytical expressions derived from LRT and SWMBTs are used for a theoretical study of magnetic hyperthermia. It is shown that LRT is only pertinent for MNPs with strong anisotropy and that SWMBTs should be used for weak anisotropy MNPs. The optimum volume of MNPs for magnetic hyperthermia as function of material and experimental parameters is derived. The maximum specific absorption rate (SAR) achievable is calculated versus the MNP anisotropy. It is shown that an optimum anisotropy increases the SAR and reduces the detrimental effects of size distribution. The optimum anisotropy is simple to calculate and depends on the magnetic field used in the hyperthermia experiments and on the MNP magnetization only. The theoretical optimum parameters are compared to the one of several magnetic materials.

Optical response features of Si-nanoparticle arrays

Abstract: Periodic structures of spherical silicon particles are analyzed using the coupled-dipole equations for studying optical response features and local electromagnetic fields. The model takes into account the electric and magnetic dipole moments of the particles embedded in a homogeneous dielectric medium. Particles with radius of 65 nm and larger are considered. It is shown that, due to the large permittivity of silicon, the first two Mie resonances are located in the region of visible light, where the absorption is small and the extinction is basically determined by scattering. The main contribution is given by the induced magnetic and electric dipoles of the particles. Thus, in contrast to metal particle arrays, here is a possibility to combine separately either the electric or magnetic dipole resonances of individual particles with the structural features. As a result, extinction spectra can have additional narrow resonant peaks connected with multiple light scattering by the magnetic dipoles and displaying a Fano-type resonant profile. Reflection and transmission properties of the Si particle arrays are investigated and the conditions of low light reflection and transmission by the particle arrays are discussed, as well as the applicability of the dipole approach. It is shown that the light transmission of finite-size arrays of Si particles can be significantly suppressed at the conditions of the particle magnetic dipole resonance. It is demonstrated that, using resonant conditions, one can separately control the enhancements of local electric and magnetic fields in the structures.

Ferroelectric Control of Spin Polarization

Abstract: A current drawback of spintronics is the large power that is usually required for magnetic writing, in contrast with nanoelectronics, which relies on "zero-current," gate-controlled operations. Efforts have been made to control the spin-relaxation rate, the Curie temperature, or the magnetic anisotropy with a gate voltage, but these effects are usually small and volatile. We used ferroelectric tunnel junctions with ferromagnetic electrodes to demonstrate local, large, and nonvolatile control of carrier spin polarization by electrically switching ferroelectric polarization. Our results represent a giant type of interfacial magnetoelectric coupling and suggest a low-power approach for spin-based information control.

Reversible electric control of exchange bias in a multiferroic field-effect device

Abstract: The control of magnetization by electric fields is important for applications in data storage and sensing. An efficient control of exchange bias by electric fields has now been achieved in thin-film devices in which a ferroelectric antiferromagnet is coupled to a ferromagnet.

A strong ferroelectric ferromagnet created by means of spin–lattice coupling

Abstract: Ferroelectric ferromagnets are exceedingly rare, fundamentally interesting multiferroic materials that could give rise to new technologies in which the low power and high speed of field-effect electronics are combined with the permanence and routability of voltage-controlled ferromagnetism. Furthermore, the properties of the few compounds that simultaneously exhibit these phenomena are insignificant in comparison with those of useful ferroelectrics or ferromagnets: their spontaneous polarizations or magnetizations are smaller by a factor of 1,000 or more. The same holds for magnetic- or electric-field-induced multiferroics. Owing to the weak properties of single-phase multiferroics, composite and multilayer approaches involving strain-coupled piezoelectric and magnetostrictive components are the closest to application today. Recently, however, a new route to ferroelectric ferromagnets was proposed by which magnetically ordered insulators that are neither ferroelectric nor ferromagnetic are transformed into ferroelectric ferromagnets using a single control parameter, strain. The system targeted, EuTiO(3), was predicted to exhibit strong ferromagnetism (spontaneous magnetization, approximately 7 Bohr magnetons per Eu) and strong ferroelectricity (spontaneous polarization, approximately 10 microC cm(-2)) simultaneously under large biaxial compressive strain. These values are orders of magnitude higher than those of any known ferroelectric ferromagnet and rival the best materials that are solely ferroelectric or ferromagnetic. Hindered by the absence of an appropriate substrate to provide the desired compression we turned to tensile strain. Here we show both experimentally and theoretically the emergence of a multiferroic state under biaxial tension with the unexpected benefit that even lower strains are required, thereby allowing thicker high-quality crystalline films. This realization of a strong ferromagnetic ferroelectric points the way to high-temperature manifestations of this spin-lattice coupling mechanism. Our work demonstrates that a single experimental parameter, strain, simultaneously controls multiple order parameters and is a viable alternative tuning parameter to composition for creating multiferroics.

Quantum tunnelling of the magnetization in a monolayer of oriented single-molecule magnets

Abstract: Single-molecule magnets are molecular complexes with magnetic bistability, and recently it was shown that such a magnetic memory effect is retained for Fe4 clusters when they are wired to a gold surface. These authors have tailored the clusters to have a preferential orientation and form a self-assembled monolayer on the surface. It then becomes possible to observe quantum tunnelling of the magnetization, which shows up as steps in the magnetic hysteresis loop.

Ultrahigh sensitivity magnetic field and magnetization measurements with an atomic magnetometer

Abstract: We describe an ultrasensitive atomic magnetometer based on optically pumped potassium atoms operating in a spin-exchange relaxation free regime. We demonstrate magnetic field sensitivity of 160 aT/Hz1/2 in a gradiometer arrangement with a measurement volume of 0.45 cm3 and energy resolution per unit bandwidth of 44ℏ. As an example of an application enabled by such a magnetometer, we describe measurements of weak remnant rock magnetization as a function of temperature with a sensitivity on the order of 10−10 emu/cm3/Hz1/2 and temperatures up to 420°C.

Multiferroic magnetoelectric composite nanostructures

Abstract: Multiferroics are attracting increasing interest and provoking much research activity driven by the profound physics of these materials, the coexistence and coupling of ferroelectric and magnetic orders, and the potential applications in novel multifunctional devices such as sensors, transducers, memories and spintronics. Multiferroic magnetoelectric (ME) composite systems, such as ferromagnetic–ferroelectric heterostructures, which offer a novel route for integrating ferroelectric and ferromagnetism, have been widely studied in recent years. In these ME composite systems, ME coupling is strain-mediated, that is, the strain induced in one component, either by magnetostriction in the ferromagnetic or by the piezoelectric effect in the ferroelectric, is transferred to the other component, altering the polarization or magnetization. This article reviews the magnetic-field control of electric polarization and its converse effect, electric-field control of magnetization, in multiferroic ME composite nanostructures. The review focuses on three kinds of ME nanostructures: vertical heterostructures, horizontal heterostructures and particulate nanocomposite films. Theoretical approaches, such as Green’s function methods, the phase field model and first-principles methods, have been used to simulate and predict the ME coupling effect in such nanostructures. Herein we briefly describe the potential applications of the ME nanostructured composites using representative examples, and outline the challenges and promising future for this field.

Multiferroics with Spiral Spin Orders

Abstract: Cross correlation between magnetism and electricity in a solid can host magnetoelectric effects, such as magnetic (electric) induction of polarization (magnetization) A key to attain the gigantic magnetoelectric response is to find the efficient magnetism–electricity coupling mechanisms Among those, recently the emergence of spontaneous (ferroelectric) polarization in the insulating helimagnet or spiral-spin structure was unraveled, as mediated by the spin-exchange and spin–orbit interactions The sign of the polarization depends on the helicity (spin rotation sense), while the polarization direction itself depends on further details of the mechanism and the underlying lattice symmetry Here, we describe some prototypical examples of the spiral-spin multiferroics, which enable some unconventional magnetoelectric control such as the magnetic-field-induced change of the polarization direction and magnitude as well as the electric-field-induced change of the spin helicity and magnetic domain

Robust isothermal electric control of exchange bias at room temperature

Abstract: Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with high-speed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr(2)O(3) has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr(2)O(3) single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias field between positive and negative values by reversing the electric field while maintaining a permanent magnetic field. This effect reflects the switching of the bulk antiferromagnetic domain state and the interface magnetization coupled to it. The switchable exchange bias sets in exactly at the bulk Neel temperature.

Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

Abstract: We have investigated the effect of applied electric field EG on thickness dependent magnetic anisotropy of sputtered Co40Fe40B20 sandwiched with MgO and Ta. The range of CoFeB thickness explored is 2 nm and below. As the thickness is reduced, the easy axis of magnetization becomes perpendicular from in-plane. We show that perpendicular magnetic anisotropy of in-plane samples and coercivity of perpendicular samples can be modified by applying EG at room temperature. Furthermore, superparamagnetic behavior is observed for CoFeB layers with further reduced thickness below ≈0.9 nm, where electric-field effect is also observed below their blocking temperature.

Slow Magnetic Relaxation in a High-Spin Iron(II) Complex

Abstract: Slow magnetic relaxation is observed for [(tpaMes)Fe]−, a trigonal pyramidal complex of high-spin iron(II), providing the first example of a mononuclear transition metal complex that behaves as a single-molecule magnet. Dc magnetic susceptibility and magnetization measurements reveal a strong uniaxial magnetic anisotropy (D = −39.6 cm−1) acting on the S = 2 ground state of the molecule. Ac magnetic susceptibility measurements indicate the absence of slow relaxation under zero applied dc field as a result of quantum tunneling of the magnetization. Application of a 1500 Oe dc field initiates slow magnetic relaxation, which follows a thermally activated tunneling mechanism at high temperature to give an effective spin-reversal barrier of Ueff = 42 cm−1 and follows a temperature-independent tunneling mechanism at low temperature. In addition, the magnetic relaxation time shows a pronounced dc-field dependence, with a maximum occurring at ∼1500 Oe.

Development of Ferromagnetism in the Doped Topological Insulator Bi 2-x Mn x Te 3

Abstract: The development of ferromagnetism in Mn-doped Bi_2Te_3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi_(2−x)Mn_xTe_3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi_(1.96)Mn_(0.04)Te_3 and Bi_(1.91)Mn_(0.09)Te_3, a second-order ferromagnetic transition is observed, with T_C∼9–12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi_2Te_3 crystals are p-type. Angle-resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi_2Te_3 are also present at 15 K in ferromagnetic Mn-doped Bi2−xMnxTe3 and that the dispersion relations of the surface states are changed in a subtle fashion.

Robust isothermal electric switching of interface magnetization: A route to voltage-controlled spintronics

Abstract: Roughness-insensitive and electrically controllable magnetization at the (0001) surface of antiferromagnetic chromia is observed using magnetometry and spin-resolved photoemission measurements and explained by the interplay of surface termination and magnetic ordering. Further, this surface in placed in proximity with a ferromagnetic Co/Pd multilayer film. Exchange coupling across the interface between chromia and Co/Pd induces an electrically controllable exchange bias in the Co/Pd film, which enables a reversible isothermal (at room temperature) shift of the global magnetic hysteresis loop of the Co/Pd film along the magnetic field axis between negative and positive values. These results reveal the potential of magnetoelectric chromia for spintronic applications requiring non-volatile electric control of magnetization.

Mechanical and Electronic Properties of MoS$_2$ Nanoribbons and Their Defects

Abstract: We present our study on atomic, electronic, magnetic and phonon properties of one dimensional honeycomb structure of molybdenum disulfide (MoS$_2$) using first-principles plane wave method. Calculated phonon frequencies of bare armchair nanoribbon reveal the fourth acoustic branch and indicate the stability. Force constant and in-plane stiffness calculated in the harmonic elastic deformation range signify that the MoS$_2$ nanoribbons are stiff quasi one dimensional structures, but not as strong as graphene and BN nanoribbons. Bare MoS$_2$ armchair nanoribbons are nonmagnetic, direct band gap semiconductors. Bare zigzag MoS$_2$ nanoribbons become half-metallic as a result of the (2x1) reconstruction of edge atoms and are semiconductor for minority spins, but metallic for the majority spins. Their magnetic moments and spin-polarizations at the Fermi level are reduced as a result of the passivation of edge atoms by hydrogen. The functionalization of MoS$_2$ nanoribbons by adatom adsorption and vacancy defect creation are also studied. The nonmagnetic armchair nanoribbons attain net magnetic moment depending on where the foreign atoms are adsorbed and what kind of vacancy defect is created. The magnetization of zigzag nanoribbons due to the edge states is suppressed in the presence of vacancy defects.

Magnetic device with optimized heat confinement

Abstract: The present disclosure concerns a magnetic element to be written using a thermally-assisted switching write operation comprising a magnetic tunnel junction formed from a tunnel barrier being disposed between first and second magnetic layers, said second magnetic layer having a second magnetization which direction can be adjusted during a write operation when the magnetic tunnel junction is heated at a high threshold temperature; an upper current line connected at the upper end of the magnetic tunnel junction; and a strap portion extending laterally and connected to the bottom end of the magnetic tunnel junction; the magnetic device further comprising a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer. The magnetic element allows for reducing heat losses during the write operation and has reduced power consumption.

Inverse spin-galvanic effect in the interface between a topological insulator and a ferromagnet.

Abstract: When a ferromagnet is deposited on the surface of a topological insulator the topologically protected surface state develops a gap and becomes a two-dimensional quantum Hall liquid. We demonstrate that the Hall current in such a liquid, induced by an external electric field, can have a dramatic effect on the magnetization dynamics of the ferromagnet by changing the effective anisotropy field. This change is dissipationless and may be substantial even in weakly spin-orbit coupled ferromagnets. We study the possibility of dissipationless current-induced magnetization reversal in monolayer-thin, insulating ferromagnets with a soft perpendicular anisotropy and discuss possible applications of this effect.

Limits on Intrinsic Magnetism in Graphene

Abstract: We have studied magnetization of graphene nanocrystals obtained by sonic exfoliation of graphite. No ferromagnetism is detected at any temperature down to 2 K. Neither do we find strong paramagnetism expected due to the massive amount of edge defects. Rather, graphene is strongly diamagnetic, similar to graphite. Our nanocrystals exhibit only a weak paramagnetic contribution noticeable below 50 K. The measurements yield a single species of defects responsible for the paramagnetism, with approximately one magnetic moment per typical graphene crystallite.

Slow magnetic relaxation in a family of trigonal pyramidal iron(II) pyrrolide complexes.

Abstract: We present a family of trigonal pyramidal iron(II) complexes supported by tris(pyrrolyl-α-methyl)amine ligands of the general formula [M(solv)(n)][(tpa(R))Fe] (M = Na, R = tert-butyl (1), phenyl (4); M = K, R = mesityl (2), 2,4,6-triisopropylphenyl (3), 2,6-difluorophenyl (5)) and their characterization by X-ray crystallography, Mossbauer spectroscopy, and high-field EPR spectroscopy. Expanding on the discovery of slow magnetic relaxation in the recently reported mesityl derivative 2, this homologous series of high-spin iron(II) complexes enables an initial probe of how the ligand field influences the static and dynamic magnetic behavior. Magnetization experiments reveal large, uniaxial zero-field splitting parameters of D = -48, -44, -30, -26, and -6.2 cm(-1) for 1-5, respectively, demonstrating that the strength of axial magnetic anisotropy scales with increasing ligand field strength at the iron(II) center. In the case of 2,6-difluorophenyl substituted 5, high-field EPR experiments provide an independent determination of the zero-field splitting parameter (D = -4.397(9) cm(-1)) that is in reasonable agreement with that obtained from fits to magnetization data. Ac magnetic susceptibility measurements indicate field-dependent, thermally activated spin reversal barriers in complexes 1, 2, and 4 of U(eff) = 65, 42, and 25 cm(-1), respectively, with the barrier of 1 constituting the highest relaxation barrier yet observed for a mononuclear transition metal complex. In addition, in the case of 1, the large range of temperatures in which slow relaxation is observed has enabled us to fit the entire Arrhenius curve simultaneously to three distinct relaxation processes. Finally, zero-field Mossbauer spectra collected for 1 and 4 also reveal the presence of slow magnetic relaxation, with two independent relaxation barriers in 4 corresponding to the barrier obtained from ac susceptibility data and to the 3D energy gap between the M(S) = ±2 and ±1 levels, respectively.

Electric field effect on magnetization at the Fe/MgO(001) interface

Abstract: Density-functional calculations are performed to explore magnetoelectric effects originating from the influence of an external electric field on magnetic properties of the Fe/MgO(001) interface. It is shown that the effect on the interface magnetization and magnetocrystalline anisotropy can be substantially enhanced if the electric field is applied across a dielectric material with a large dielectric constant. In particular, we predict an enhancement of the interface magnetoelectric susceptibility by a factor of the dielectric constant of MgO over that of the free standing Fe (001) surface. We also predict a significant effect of electric field on the interface magnetocrystalline anisotropy due to the change in the relative occupancy of the 3d-orbitals of Fe atoms at the Fe/MgO interface. These results may be interesting for technological applications such as electrically controlled magnetic data storage.

Tilting of the spin orientation induced by Rashba effect in ferromagnetic metal layer

Abstract: We devised a method to measure the virtual magnetic field induced by Rashba effect in ferromagnetic metal layer. Transverse Rashba magnetic field makes the magnetization direction tilted out of the easy axis, which could be detected by the change in anomalous hall resistances. Through a specified measurement of the second harmonics of the hall resistance, the Rashba field could be obtained with high sensitivity even at low current regime. The results are compared with the prior reports based on the measurement of the transverse field required for the nucleation of reversed domain.

Magnetic interactions between nanoparticles.

Abstract: We present a short overview of the influence of inter-particle interactions on the properties of magnetic nanoparticles. Strong magnetic dipole interactions between ferromagnetic or ferrimagnetic particles, that would be superparamagnetic if isolated, can result in a collective state of nanoparticles. This collective state has many similarities to spin-glasses. In samples of aggregated magnetic nanoparticles, exchange interactions are often important and this can also lead to a strong suppression of superparamagnetic relaxation. The temperature dependence of the order parameter in samples of strongly interacting hematite nanoparticles or goethite grains is well described by a simple mean field model. Exchange interactions between nanoparticles with different orientations of the easy axes can also result in a rotation of the sub-lattice magnetization directions.

Multiferroic M-type hexaferrites with a room-temperature conical state and magnetically controllable spin helicity.

Abstract: Magnetic and magnetoelectric (ME) properties have been studied for single crystals of Sc-doped M-type barium hexaferrites. Magnetization (M) and neutron diffraction measurements revealed that by tuning Sc concentration a longitudinal conical state is stabilized up to above room temperatures. ME measurements have shown that a transverse magnetic field (H) can induce electric polarization (P) at lower temperatures and that the spin helicity is nonvolatile and endurable up to near the conical magnetic transition temperature. It was also revealed that the response (reversal or retention) of the P vector upon the reversal of M varies with temperature. In turn, this feature allows us to control the relation between the spin helicity and the M vectors with H and temperature.

Defect‐Related Emissions and Magnetization Properties of ZnO Nanorods

Abstract: A clear correlation between defect-related emissions and the magnetization of ZnO nanorods synthesized by a one-step aqueous chemical method is demonstrated. The relative contribution of the emission bands arising from various types of defects is determined and found to be linked with the size of the nanorods and annealing conditions. When the size of the nanorods and the annealing temperature are increased, the magnetization of pure ZnO nanorods decreases with the reduction of a defect-rotated band originating from singly charged oxygen vacancies (V + o ). With a sufficient increase of annealing temperature (at 900 °C), the nanorods show diamagnetic behavior. Combining with the electron paramagnetic resonance results, a direct link between the magnetization and the relative occupancy of the singly charged oxygen vacancies present on the surface of ZnO nanorods is established.

[MnIII4LnIII4] Calix[4]arene Clusters as Enhanced Magnetic Coolers and Molecular Magnets

Abstract: The use of methylene-bridged calix[4]arenes in 3d/4f chemistry produces a family of clusters of general formula [Mn(III)(4)Ln(III)(4)(OH)(4)(C4)(4)(NO(3))(2)(DMF)(6)(H(2)O)(6)](OH)(2) (where C4 = calix[4]arene; Ln = Gd (1), Tb (2), Dy (3)). The molecular structure describes a square of Ln(III) ions housed within a square of Mn(III) ions. Magnetic studies reveal that 1 has a large number of molecular spin states that are populated even at the lowest investigated temperatures, while the ferromagnetic limit S = 22 is being approached only at the highest applied fields. This, combined with the high magnetic isotropy, makes the complex an excellent magnetic refrigerant for low-temperature applications. Replacement of the isotropic Gd(III) ions with the anisotropic Tb(III) and Dy(III) ions "switches" the magnetic properties of the cluster so that 2 and 3 behave as low-temperature molecular magnets, displaying slow relaxation of the magnetization.

Ferromagnetism in defect-ridden oxides and related materials

Abstract: The existence of high-temperature ferromagnetism in thin films and nanoparticles of oxides containing small quantities of magnetic dopants remains controversial. Some regard these materials as dilute magnetic semiconductors, while others think they are ferromagnetic only because the magnetic dopants form secondary ferromagnetic impurity phases such as cobalt metal or magnetite. There are also reports in d0 systems and other defective oxides that contain no magnetic ions. Here, we investigate TiO2 (rutile) containing 1–5% of iron cations and find that the room temperature ferromagnetism of films prepared by pulsed-laser deposition is not due to magnetic ordering of the iron. The films are neither dilute magnetic semiconductors nor hosts to an iron-based ferromagnetic impurity phase. A new model is developed for defect-related ferromagnetism, which involves a spin-split defect band populated by charge transfer from a proximate charge reservoir—in the present case a mixture of Fe2+ and Fe3+ ions in the oxide lattice. The phase diagram for the model shows how inhomogeneous Stoner ferromagnetism depends on the total number of electrons Ntot, the Stoner exchange integral I and the defect bandwidth W; the band occupancy is governed by the d–d Coulomb interaction U. There are regions of ferromagnetic metal, half-metal and insulator as well as non-magnetic metal and insulator. A characteristic feature of the high-temperature Stoner magnetism is an anhysteretic magnetization curve, which is practically temperature independent below room temperature. This is related to a wandering ferromagnetic axis, which is determined by local dipole fields. The magnetization is limited by the defect concentration, not by the 3d doping. Only 1–2% of the volume of the films is magnetically ordered.

Spin transfer and current-induced switching in antiferromagnets

Abstract: Recent experiments show that spin-polarized current may influence the state of generally accessory element of spin valves, an antiferromagnetic (AFM) layer, which is used for ``pinning'' Here we study the dynamics of AFM component of the ``pinned'' ferromagnetic (FM) layer induced by simultaneous application of the spin-polarized current and external magnetic field We find stability range of such a configuration of FM/AFM system in which orientation of FM magnetization is parallel to AFM vector We calculate the field dependence of the critical current for different orientations of the external magnetic field with respect to the crystal axes of FM/AFM bilayer We show the possibility of stable current-induced precession of AFM vector around FM magnetization with the frequency that linearly depends on the bias current Furthermore, we estimate an optimal duration of the current pulse required for switching between different states of FM/AFM system and calculate the current and field dependencies of switching time The results obtained reveal the difference between dynamics of ferromagnets and antiferromagnets subjected to spin transfer torques