Showing papers on "Magnetization published in 2019"

Observation of the nonlinear Hall effect under time-reversal-symmetric conditions

Abstract: The electrical Hall effect is the production, upon the application of an electric field, of a transverse voltage under an out-of-plane magnetic field. Studies of the Hall effect have led to important breakthroughs, including the discoveries of Berry curvature and topological Chern invariants1,2. The internal magnetization of magnets means that the electrical Hall effect can occur in the absence of an external magnetic field2; this 'anomalous' Hall effect is important for the study of quantum magnets2-7. The electrical Hall effect has rarely been studied in non-magnetic materials without external magnetic fields, owing to the constraint of time-reversal symmetry. However, only in the linear response regime-when the Hall voltage is linearly proportional to the external electric field-does the Hall effect identically vanish as a result of time-reversal symmetry; the Hall effect in the nonlinear response regime is not subject to such symmetry constraints8-10. Here we report observations of the nonlinear Hall effect10 in electrical transport in bilayers of the non-magnetic quantum material WTe2 under time-reversal-symmetric conditions. We show that an electric current in bilayer WTe2 leads to a nonlinear Hall voltage in the absence of a magnetic field. The properties of this nonlinear Hall effect are distinct from those of the anomalous Hall effect in metals: the nonlinear Hall effect results in a quadratic, rather than linear, current-voltage characteristic and, in contrast to the anomalous Hall effect, the nonlinear Hall effect results in a much larger transverse than longitudinal voltage response, leading to a nonlinear Hall angle (the angle between the total voltage response and the applied electric field) of nearly 90 degrees. We further show that the nonlinear Hall effect provides a direct measure of the dipole moment10 of the Berry curvature, which arises from layer-polarized Dirac fermions in bilayer WTe2. Our results demonstrate a new type of Hall effect and provide a way of detecting Berry curvature in non-magnetic quantum materials.

Millimeter-scale flexible robots with programmable three-dimensional magnetization and motions

Abstract: Flexible magnetic small-scale robots use patterned magnetization to achieve fast transformation into complex three-dimensional (3D) shapes and thereby achieve locomotion capabilities and functions. These capabilities address current challenges for microrobots in drug delivery, object manipulation, and minimally invasive procedures. However, possible microrobot designs are limited by the existing methods for patterning magnetic particles in flexible materials. Here, we report a method for patterning hard magnetic microparticles in an elastomer matrix. This method, based on ultraviolet (UV) lithography, uses controlled reorientation of magnetic particles and selective exposure to UV light to encode magnetic particles in planar materials with arbitrary 3D orientation with a geometrical feature size as small as 100 micrometers. Multiple planar microrobots with various sizes, different geometries, and arbitrary magnetization profiles can be fabricated from a single precursor in one process. Moreover, a 3D magnetization profile allows higher-order and multi-axis bending, large-angle bending, and combined bending and torsion in one sheet of polymer, creating previously unachievable shape changes and microrobotic locomotion mechanisms such as multi-arm power grasping and multi-legged paddle crawling. A physics-based model is also presented as a design tool to predict the shape changes under magnetic actuation.

Nonlinear anomalous Hall effect in few-layer WTe 2

Abstract: The Hall effect occurs only in systems with broken time-reversal symmetry, such as materials under an external magnetic field in the ordinary Hall effect and magnetic materials in the anomalous Hall effect (AHE)1. Here we show a nonlinear AHE in a non-magnetic material under zero magnetic field, in which the Hall voltage depends quadratically on the longitudinal current2-6. We observe the effect in few-layer Td-WTe2, a two-dimensional semimetal with broken inversion symmetry and only one mirror line in the crystal plane. Our angle-resolved electrical measurements reveal that the Hall voltage maximizes (vanishes) when the bias current is perpendicular (parallel) to the mirror line. The observed effect can be understood as an AHE induced by the bias current, which generates an out-of-plane magnetization. The temperature dependence of the Hall conductivity further suggests that both the intrinsic Berry curvature dipole and extrinsic spin-dependent scatterings contribute to the observed nonlinear AHE.

Probing magnetism in 2D materials at the nanoscale with single-spin microscopy.

Abstract: The discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) crystals has generated widespread interest. Making further progress in this area requires quantitative knowledge of the magnetic properties of vdW magnets at the nanoscale. We used scanning single-spin magnetometry based on diamond nitrogen-vacancy centers to image the magnetization, localized defects, and magnetic domains of atomically thin crystals of the vdW magnet chromium(III) iodide (CrI3). We determined the magnetization of CrI3 monolayers to be ≈16 Bohr magnetons per square nanometer, with comparable values in samples with odd numbers of layers; however, the magnetization vanishes when the number of layers is even. We also found that structural modifications can induce switching between ferromagnetic and antiferromagnetic interlayer ordering. These results demonstrate the benefit of using single-spin scanning magnetometry to study the magnetism of 2D vdW magnets.

Reconfigurable ferromagnetic liquid droplets.

Abstract: Solid ferromagnetic materials are rigid in shape and cannot be reconfigured. Ferrofluids, although reconfigurable, are paramagnetic at room temperature and lose their magnetization when the applied magnetic field is removed. Here, we show a reversible paramagnetic-to-ferromagnetic transformation of ferrofluid droplets by the jamming of a monolayer of magnetic nanoparticles assembled at the water-oil interface. These ferromagnetic liquid droplets exhibit a finite coercivity and remanent magnetization. They can be easily reconfigured into different shapes while preserving the magnetic properties of solid ferromagnets with classic north-south dipole interactions. Their translational and rotational motions can be actuated remotely and precisely by an external magnetic field, inspiring studies on active matter, energy-dissipative assemblies, and programmable liquid constructs.

Ferromagnetism Near Room Temperature in the Cleavable van der Waals Crystal Fe5GeTe2

Abstract: Two-dimensional materials with intrinsic functionality are becoming increasingly important in exploring fundamental condensed matter science and for developing advanced technologies. Bulk crystals that can be exfoliated are particularly relevant to these pursuits as they provide the opportunity to study the role of physical dimensionality and explore device physics in highly crystalline samples and designer heterostructures in a routine manner. Magnetism is a key element in these endeavors; however, relatively few cleavable materials are magnetic and none possess magnetic order at ambient conditions. Here, we introduce Fe5- xGeTe2 as a cleavable material with ferromagnetic behavior at room temperature. We established intrinsic magnetic order at room temperature in bulk crystals ([Formula: see text] = 310 K) through magnetization measurements and in exfoliated, thin flakes ([Formula: see text] ≈ 280 K) using the anomalous Hall effect. Our work reveals Fe5GeTe2 as a prime candidate for incorporating intrinsic magnetism into functional van der Waals heterostructures and devices near room temperature.

Large magnetic gap at the Dirac point in Bi2Te3/MnBi2Te4 heterostructures.

Abstract: Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE), which provides quantized edge states for lossless charge-transport applications1–8. The edge states are hosted by a magnetic energy gap at the Dirac point2, but hitherto all attempts to observe this gap directly have been unsuccessful. Observing the gap is considered to be essential to overcoming the limitations of the QAHE, which so far occurs only at temperatures that are one to two orders of magnitude below the ferromagnetic Curie temperature, TC (ref. 8). Here we use low-temperature photoelectron spectroscopy to unambiguously reveal the magnetic gap of Mn-doped Bi2Te3, which displays ferromagnetic out-of-plane spin texture and opens up only below TC. Surprisingly, our analysis reveals large gap sizes at 1 kelvin of up to 90 millielectronvolts, which is five times larger than theoretically predicted9. Using multiscale analysis we show that this enhancement is due to a remarkable structure modification induced by Mn doping: instead of a disordered impurity system, a self-organized alternating sequence of MnBi2Te4 septuple and Bi2Te3 quintuple layers is formed. This enhances the wavefunction overlap and size of the magnetic gap10. Mn-doped Bi2Se3 (ref. 11) and Mn-doped Sb2Te3 form similar heterostructures, but for Bi2Se3 only a nonmagnetic gap is formed and the magnetization is in the surface plane. This is explained by the smaller spin–orbit interaction by comparison with Mn-doped Bi2Te3. Our findings provide insights that will be crucial in pushing lossless transport in topological insulators towards room-temperature applications. In theory, the anomalous quantum Hall effect is observed in edge channels of topological insulators when there is a magnetic energy gap at the Dirac point; this gap has now been observed by low-temperature photoelectron spectroscopy in Mn-doped Bi2Te3.

Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2

Abstract: The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for spintronic devices with exceptional properties. However, to use 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of Fe3GeTe2/Pt, in which the magnetization of few-layered Fe3GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications.

Natural van der Waals heterostructural single crystals with both magnetic and topological properties

Abstract: Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.

All-electric magnetization switching and Dzyaloshinskii-Moriya interaction in WTe 2 /ferromagnet heterostructures.

Abstract: All-electric magnetization manipulation at low power is a prerequisite for a wide adoption of spintronic devices. Materials such as heavy metals1–3 or topological insulators4,5 provide good charge-to-spin conversion efficiencies. They enable magnetization switching in heterostructures with either metallic ferromagnets or with magnetic insulators. Recent work suggests a pronounced Edelstein effect in Weyl semimetals due to their non-trivial band structure6,7; the Edelstein effect can be one order of magnitude stronger than it is in topological insulators or Rashba systems. Furthermore, the strong intrinsic spin Hall effect from the bulk states in Weyl semimetals can contribute to the spin current generation8. The Td phase of the Weyl semimetal WTe2 (WTe2 hereafter) possesses strong spin–orbit coupling6,9 and non-trivial band structures10 with a large spin polarization protected by time-reversal symmetry in both the surface and bulk states9–11. Atomically flat surfaces, which can be produced with high quality12, facilitate spintronic device applications. Here, we use WTe2 as a spin current source in WTe2/Ni81Fe19 (Py) heterostructures. We report field-free current-induced magnetization switching at room temperature. A charge current density of ~2.96 × 105 A cm−2 suffices to switch the magnetization of the Py layer. With the charge current along the b axis of the WTe2 layer, the thickness-dependent charge-to-spin conversion efficiency reaches 0.51 at 6–7 GHz. At the WTe2/Py interface, a Dzyaloshinskii–Moriya interaction (DMI) with a DMI constant of −1.78 ± 0.06 mJ m−2 induces chiral domain wall tilting. Our study demonstrates the capability of WTe2 to efficiently manipulate magnetization and sheds light on the role of the interface in Weyl semimetal/magnet heterostructures. The Weyl semimetal WTe2 possesses strong spin–orbit coupling and time-reversal-protected spin polarization in surface and bulk states. In a WTe2/permalloy heterostructure, WTe2 can act as a spin current source that enables magnetization switching at low current densities.

Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures

Abstract: A transistor based on spin rather than charge—a spin transistor—could potentially offer non-volatile data storage and improved performance compared with traditional transistors. Many approaches have been explored to realize spin transistors, but their development remains a considerable challenge. The recent discovery of two-dimensional magnetic insulators such as chromium triiodide (CrI3), which offer electrically switchable magnetic order and an effective spin filtering effect, can provide new operating principles for spin transistors. Here, we report spin tunnel field-effect transistors (TFETs) based on dual-gated graphene/CrI3/graphene tunnel junctions. The devices exhibit an ambipolar behaviour and tunnel conductance that is dependent on the magnetic order in the CrI3 tunnel barrier. The gate voltage switches the tunnel barrier between interlayer antiferromagnetic and ferromagnetic states under a constant magnetic bias near the spin-flip transition, thus effectively and reversibly altering the device between a low and a high conductance state, with large hysteresis. By electrically controlling the magnetization configurations instead of the spin current, our spin TFETs achieve a high–low conductance ratio approaching 400%, suggesting they could be of value in the development of non-volatile memory applications. A tunnel field-effect transistor with spin-dependent outputs that are voltage controllable and reversible can be created using a dual-gated graphene/CrI3/graphene tunnel junction.

Magneto-ionic control of magnetism using a solid-state proton pump.

Abstract: Voltage-gated ion transport as a means of manipulating magnetism electrically could enable ultralow-power memory, logic and sensor technologies. Earlier work made use of electric-field-driven O2- displacement to modulate magnetism in thin films by controlling interfacial or bulk oxidation states. However, elevated temperatures are required and chemical and structural changes lead to irreversibility and device degradation. Here we show reversible and non-destructive toggling of magnetic anisotropy at room temperature using a small gate voltage through H+ pumping in all-solid-state heterostructures. We achieve 90° magnetization switching by H+ insertion at a Co/GdOx interface, with no degradation in magnetic properties after >2,000 cycles. We then demonstrate reversible anisotropy gating by hydrogen loading in Pd/Co/Pd heterostructures, making metal-metal interfaces susceptible to voltage control. The hydrogen storage metals Pd and Pt are high spin-orbit coupling materials commonly used to generate perpendicular magnetic anisotropy, Dzyaloshinskii-Moriya interaction, and spin-orbit torques in ferromagnet/heavy-metal heterostructures. Thus, our work provides a platform for voltage-controlled spin-orbitronics.

Anomalous Nernst effect beyond the magnetization scaling relation in the ferromagnetic Heusler compound Co 2 MnGa

Abstract: Applying a temperature gradient in a magnetic material generates a voltage that is perpendicular to both the heat flow and the magnetization. This phenomenon is the anomalous Nernst effect (ANE), which was long thought to be proportional to the value of the magnetization. However, more generally, the ANE has been predicted to originate from a net Berry curvature of all bands near the Fermi level (EF). Subsequently, a large anomalous Nernst thermopower ( $${\boldsymbol{S}}_{{\boldsymbol{yx}}}^{\boldsymbol{A}}$$ ) has recently been observed in topological materials with no net magnetization but a large net Berry curvature [Ωn(k)] around EF. These experiments clearly fall outside the scope of the conventional magnetization model of the ANE, but a significant question remains. Can the value of the ANE in topological ferromagnets exceed the highest values observed in conventional ferromagnets? Here, we report a remarkably high $${\boldsymbol{S}}_{{\boldsymbol{yx}}}^{\boldsymbol{A}}$$ -value of ~6.0 µV K−1 in the ferromagnetic topological Heusler compound Co2MnGa at room temperature, which is approximately seven times larger than any anomalous Nernst thermopower value ever reported for a conventional ferromagnet. Combined electrical, thermoelectric, and first-principles calculations reveal that this high-value of the ANE arises from a large net Berry curvature near the Fermi level associated with nodal lines and Weyl points. Thermoelectric devices that convert heat into electricity may benefit from the unusual temperature sensitivity of cobalt–manganese–gallium (Co2MnGa) ferromagnets. When one end of a magnetized metal is made hot and the other cold, redistribution of electrons creates an electric voltage perpendicular to the temperature gradient. Satya N. Guin from the Max Planck Institute for Chemical Physics of Solids in Dresden, Germany, and colleagues now report how certain class of material can boost the electrical power produced from “waste heat” source using transverse thermoelectric effect. When the team applied magnetic fields to Co2MnGa and characterized its transverse electrical response to temperature gradient, they saw voltage generation several times higher than expected. Computer simulations indicated that the crystal geometry distorted the energy levels available to electron making it easier for electrons to move when thermally excited. We report a high anomalous Nernst thermopower ( $$S_{yx}^A$$ ) -value of ~6.0 µV K−1 at room temperature in the ferromagnetic topological Heusler compound Co2MnGa. The measured value is seven-times larger than any anomalous Nernst thermopower value ever reported for a conventional ferromagnet. The high anomalous Nernst effect originates from a large net Berry curvature near the Fermi level associated with nodal lines and Weyl points.

Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2

Abstract: The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for novel spintronic devices with exceptional performances. However, in order to utilize 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of Fe3GeTe2/Pt, in which the magnetization of few-layered Fe3GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications.

Highly Efficient Spin-Orbit Torque and Switching of Layered Ferromagnet Fe3GeTe2.

Abstract: Among van der Waals (vdW) layered ferromagnets, Fe3GeTe2 (FGT) is an excellent candidate material to form FGT/heavy metal heterostructures for studying the effect of spin-orbit torques (SOT). Its metallicity, strong perpendicular magnetic anisotropy built in the single atomic layers, relatively high Curie temperature (Tc ∼ 225 K), and electrostatic gate tunability offer a tantalizing possibility of achieving the ultimate high SOT limit in monolayer all-vdW nanodevices. In this study, we fabricate heterostructures of FGT/Pt with 5 nm of Pt sputtered onto the atomically flat surface of ∼15-23 nm exfoliated FGT flakes. The spin current generated in Pt exerts a damping-like SOT on FGT magnetization. At ∼2.5 × 1011 A/m2 current density, SOT causes the FGT magnetization to switch, which is detected by the anomalous Hall effect of FGT. To quantify the SOT effect, we measure the second harmonic Hall responses as the applied magnetic field rotates the FGT magnetization in the plane. Our analysis shows that the SOT efficiency is comparable with that of the best heterostructures containing three-dimensional (3D) ferromagnetic metals and much larger than that of heterostructures containing 3D ferrimagnetic insulators. Such large efficiency is attributed to the atomically flat FGT/Pt interface, which demonstrates the great potential of exploiting vdW heterostructures for highly efficient spintronic nanodevices.

Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction

Abstract: Atomically thin chromium triiodide (CrI3) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of antialigned spin filters, which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of 10 or more). In addition, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work demonstrates new kinds of ma...

Anomalous spin-orbit torques in magnetic single-layer films.

Abstract: The spin Hall effect couples charge and spin transport1–3, enabling electrical control of magnetization4,5. A quintessential example of spin-Hall-related transport is the anomalous Hall effect (AHE)6, first observed in 1880, in which an electric current perpendicular to the magnetization in a magnetic film generates charge accumulation on the surfaces. Here, we report the observation of a counterpart of the AHE that we term the anomalous spin–orbit torque (ASOT), wherein an electric current parallel to the magnetization generates opposite spin–orbit torques on the surfaces of the magnetic film. We interpret the ASOT as being due to a spin-Hall-like current generated with an efficiency of 0.053 ± 0.003 in Ni80Fe20, comparable to the spin Hall angle of Pt7. Similar effects are also observed in other common ferromagnetic metals, including Co, Ni and Fe. First-principles calculations corroborate the order of magnitude of the measured values. This work suggests that a strong spin current with spin polarization transverse to the magnetization can be generated within a ferromagnet, despite spin dephasing8. The large magnitude of the ASOT should be taken into consideration when investigating spin–orbit torques in ferromagnetic/non-magnetic bilayers. In a ferromagnetic layer, an electric current parallel to the magnetization generates opposite spin–orbit torques on the two surfaces of the magnetic film, which is attributed to the generation of spin currents with a spin polarization transverse to the magnetization within the ferromagnet.

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator.

Abstract: Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque-induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

Manipulating exchange bias by spin–orbit torque

Abstract: Exchange bias, a shift in the hysteresis loop of a ferromagnet arising from interfacial exchange coupling between adjacent ferromagnetic and antiferromagnetic layers, is an integral part of spintronic devices. Here, we show that spin–orbit torque generated from spin current, a promising approach to switch the ferromagnetic magnetization of next-generation magnetic random access memory, can also be used to manipulate the exchange bias. Applying current pulses to a Pt/Co/IrMn trilayer causes concurrent switching of ferromagnetic magnetization and exchange bias, but with different underlying mechanisms. This implies that the ferromagnetic magnetization and exchange bias can be manipulated independently. Our work demonstrates that spin–orbit torque in ferromagnet/antiferromagnet heterostructures facilitates independent manipulations of distinct magnetic properties, motivating innovative designs for future spintronics devices. Spin–orbit torque is used to control the magnetic exchange bias in a Pt/Co/IrMn trilayer.

Current-induced magnetization switching in all-oxide heterostructures.

Abstract: The electrical switching of magnetization through spin–orbit torque (SOT)1 holds promise for application in information technologies, such as low-power, non-volatile magnetic memory. Materials with strong spin–orbit coupling, such as heavy metals2–4 and topological insulators5,6, can convert a charge current into a spin current. The spin current can then execute a transfer torque on the magnetization of a neighbouring magnetic layer, usually a ferromagnetic metal like CoFeB, and reverse its magnetization. Here, we combine a ferromagnetic transition metal oxide7 with an oxide with strong spin–orbit coupling8 to demonstrate all-oxide SOT devices. We show current-induced magnetization switching in SrIrO3/SrRuO3 bilayer structures. By controlling the magnetocrystalline anisotropy of SrRuO3 on (001)- and (110)-oriented SrTiO3 (STO) substrates, we designed two types of SOT switching schemes. For the bilayer on the STO(001) substrate, a magnetic-field-free switching was achieved, which remained undisturbed even when the external magnetic field reached 100 mT. The charge-to-spin conversion efficiency for the bilayer on the STO(110) substrate ranged from 0.58 to 0.86, depending on the directionality of the current flow with respect to the crystalline symmetry. All-oxide SOT structures may help to realize field-free switching through a magnetocrystalline anisotropy design. All-electrical switching of magnetization holds promise for applications in information technologies with low power consumption. Here, current-induced spin–orbit torque switches the magnetization in SrIrO3/SrRuO3 bilayer structures at 70 K in the absence of an external magnetic field.

High-speed domain wall racetracks in a magnetic insulator

Abstract: Recent reports of current-induced switching of ferrimagnetic oxides coupled to heavy metals have opened prospects for implementing magnetic insulators into electrically addressable devices. However, the configuration and dynamics of magnetic domain walls driven by electrical currents in insulating oxides remain unexplored. Here we investigate the internal structure of the domain walls in Tm3Fe5O12 (TmIG) and TmIG/Pt bilayers, and demonstrate their efficient manipulation by spin–orbit torques with velocities of up to 400 ms−1 and minimal current threshold for domain wall flow of 5 × 106 A cm−2. Domain wall racetracks are defined by Pt current lines on continuous TmIG films, which allows for patterning the magnetic landscape of TmIG in a fast and reversible way. Scanning nitrogen-vacancy magnetometry reveals that the domain walls of TmIG thin films grown on Gd3Sc2Ga3O12 exhibit left-handed Neel chirality, changing to an intermediate Neel–Bloch configuration upon Pt deposition. These results indicate the presence of interfacial Dzyaloshinskii–Moriya interaction in magnetic garnets, opening the possibility to stabilize chiral spin textures in centrosymmetric magnetic insulators. Fast and low-power electrical control of magnetic textures is expected to enable a new generation of computational devices. Here the authors show how chiral interactions determine the structure of domain walls in Tm3Fe5O12 and lead to efficient current-driven wall motion.

Natural van der Waals heterostructural single crystals with both magnetic and topological properties

Abstract: Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.

Strain Engineering of the Berry Curvature Dipole and Valley Magnetization in Monolayer MoS 2

Abstract: The Berry curvature dipole is a physical quantity that is expected to allow various quantum geometrical phenomena in a range of solid-state systems. Monolayer transition metal dichalcogenides provide an exceptional platform to modulate and investigate the Berry curvature dipole through strain. Here, we theoretically demonstrate and experimentally verify for monolayer ${\mathrm{MoS}}_{2}$ the generation of valley orbital magnetization as a response to an in-plane electric field due to the Berry curvature dipole. The measured valley orbital magnetization shows excellent agreement with the calculated Berry curvature dipole, which can be controlled by the magnitude and direction of strain. Our results show that the Berry curvature dipole acts as an effective magnetic field in current-carrying systems, providing a novel route to generate magnetization.

Intrinsic spin currents in ferromagnets

Abstract: First-principles calculations show that electric fields applied to ferromagnets generate spin currents flowing perpendicularly to the electric field. Reduced symmetry in these ferromagnets enables a wide variety of such spin currents. However, the total spin current is approximately the sum of a magnetization-independent spin Hall current and an anisotropic spin anomalous Hall current. Intrinsic spin currents are not subject to dephasing, enabling their spin polarizations to be misaligned with the magnetization and allowing for the magnetization-independent spin Hall effect. The spin Hall conductivity and spin anomalous Hall conductivities of transition-metal ferromagnets are comparable to those found in heavy metals, opening different avenues for efficient spin current generation in spintronic devices.

A semiconducting layered metal-organic framework magnet.

Abstract: The realization of ferromagnetism in semiconductors is an attractive avenue for the development of spintronic applications. Here, we report a semiconducting layered metal-organic framework (MOF), namely K3Fe2[(2,3,9,10,16,17,23,24-octahydroxy phthalocyaninato)Fe] (K3Fe2[PcFe-O8]) with spontaneous magnetization. This layered MOF features in-plane full π-d conjugation and exhibits semiconducting behavior with a room temperature carrier mobility of 15 ± 2 cm2 V−1 s−1 as determined by time-resolved Terahertz spectroscopy. Magnetization experiments and 57Fe Mossbauer spectroscopy demonstrate the presence of long-range magnetic correlations in K3Fe2[PcFe-O8] arising from the magnetic coupling between iron centers via delocalized π electrons. The sample exhibits superparamagnetic features due to a distribution of crystal size and possesses magnetic hysteresis up to 350 K. Our work sets the stage for the development of spintronic materials exploiting magnetic MOF semiconductors. Semiconductors that display spontaneous magnetization are attractive for spintronic applications. Here the authors report a p-type semiconducting layered metal–organic framework that displays a room temperature carrier mobility of 15 ± 2 cm2 V−1 s−1 as well as long-range magnetic correlations.

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

Abstract: Electrically switchable magnetization is considered a milestone in the development of ultralow power spintronic devices, and it has been a long sought-after goal for electric-field control of magnetoresistance in magnetic tunnel junctions with ultralow power consumption. Here, through integrating spintronics and multiferroics, we investigate MgO-based magnetic tunnel junctions on ferroelectric substrate with a high tunnel magnetoresistance ratio of 235%. A giant, reversible and nonvolatile electric-field manipulation of magnetoresistance to about 55% is realized at room temperature without the assistance of a magnetic field. Through strain-mediated magnetoelectric coupling, the electric field modifies the magnetic anisotropy of the free layer leading to its magnetization rotation so that the relative magnetization configuration of the magnetic tunnel junction can be efficiently modulated. Our findings offer significant fundamental insight into information storage using electric writing and magnetic reading and represent a crucial step towards low-power spintronic devices. Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at room temperature and zero magnetic field.