Magnetocapacitance

About: Magnetocapacitance is a research topic. Over the lifetime, 497 publications have been published within this topic receiving 23846 citations.

Temperature dependent junction capacitance-voltage characteristics of Ni embedded TiN/SiO2/p-Si metal–insulator–semiconductor structure

Abstract: This work presents the junction capacitance–voltage characteristics of highly textured/epitaxial Ni nanoparticle embedded in TiN matrix (TiN(Ni)) metal-insulator-semiconductor TiN(Ni)/SiO2/p-Si (100) heterojunction in the temperature range of 10–300 K. This heterojunction behaves as metal-semiconductor junction with unavoidable leakage through native oxide SiO2 layer. The clockwise hysteresis loop has been observed in the capacitance-voltage characteristics measured at various frequencies mainly due to presence of trap centers at the TiN(Ni)/SiO2 interface and these are temperature dependent. The spin-dependent trap charge effect at the interface influences the quadratic nature of the capacitance with magnetic field. The junction magnetocapacitance (JMC) is observed to be dependent on both temperature and frequency. The highest JMC of this heterojunction has been observed at 200 K at higher frequencies (100 kHz–1 MHz). It is found that there is not much effect of band structure modification under magnetic field causing the JMC.

Large Coupled Magnetoresponses in EuNbO2N.

Abstract: We have explored a new strategy to discover materials with large resistive or capacitive responses to magnetic fields by synthesizing EuMO2N (M = Nb, Ta) perovskites that combine ferromagnetic order of S = 7/2 Eu2+ spins with possible off-center distortions of the d0 M5+ cations enhanced by covalent bonding to N. EuNbO2N shows colossal magnetoresistances at low temperatures and a giant magnetocapacitance. However, the latter response originates from a microstructural effect rather than an intrinsic multiferroism.

Magnetic field induced ferroelectric to relaxor crossover in Tb1−xCaxMnO3

Abstract: The influence of magnetic field on the electrical properties of Tb1−x Cax MnO3 has been investigated by means of dielectric, polarization and neutron diffraction measurements. A field of 6 T applied along the b-axis induces a crossover from ferroelectric to relaxor behavior for the x = 0.02 compound at temperatures close to the ferroelectric transition. The mechanism of this field induced crossover involves a decrease in the coherence length of the Mn-spin-spiral structure due to increasing electron hopping rates associated with double exchange. Moreover, a large negative magnetocapacitance is observed at the freezing temperature for x = 0.05, which originates from suppression of the relaxor state and thus represents a new mechanism of magnetocapacitance. (Some figures in this article are in colour only in the electronic version)

Magnetodielectric properties of Cr3+ ions doped BaTiO3 multiferroic ceramic

Abstract: Single-Phase BaTiO3 (BTO) and Cr3+ ions doped BTO ie BaTi08Cr02O3 (BTCO) were prepared by solid state reaction of ceramics The value of dielectric permittivity at room temperature (e´RT ∼1200 at 100 Hz) of BTO was found to be higher than BTCO (e´RT ∼1000), this type of behavior may be ascribed due to distortion in lattice parameters (c/a) Substitution of Cr3+ ions at the site of Ti4+ ions (d0) will create oxygen vacancies and induce O2−(p)–Cr3+(d) hybridization Magnetic moment of BTCO was found to be ∼ 002 emu/g at an applied magnetic field of 4 kOe The value of the magnetocapacitance was observed ∼33%, which may be a sign of magnetoelectric coupling in the Cr3+ ions doped BTO multiferroic system