Topic
Magnetocapacitance
About: Magnetocapacitance is a research topic. Over the lifetime, 497 publications have been published within this topic receiving 23846 citations.
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09 May 2016
TL;DR: In this article, the space charge region of the p-n junction was manipulated under a magnetic field to reveal that the magnetocapacitance and the magnetoresistance in pn junction both arise from the redistribution of the charge region under the magnetic field and give a new way for the development of future magnetic sensors with non-magnetic pn junctions.
Abstract: We report a pronounced change of capacitance in silicon based p-n junction by manipulating the space charge region of the p-n junction under a magnetic field. By measuring the charge and discharge curves of p-n junction with a pulsed voltage, we find that with increasing the magnetic field the p-n junction resistance increases sharply, while the value of capacitance is obviously suppressed. Our results reveal that the magnetocapacitance and the magnetoresistance in p-n junction both arise from the redistribution of the space charge region under the magnetic field and give a new way for the development of future magnetic sensors with non-magnetic p-n junctions.
TL;DR: The correlation between colossal magnetocapacitance (CMC) and colossal magnetoresistance (CMR) in CdCr2S4 system has been revealed in this paper.
Abstract: The correlation between colossal magnetocapacitance (CMC) and colossal magnetoresistance (CMR) in CdCr2S4 system has been revealed. The CMC is induced in polycrystalline Cd0.97In0.03Cr2S4 by annealing in cadmium vapor. At the same time, an insulator-metal transition and a concomitant CMR are observed near the Curie temperature. In contrast, after the same annealing treatment, CdCr2S4 displays a typical semiconductor behavior and does not show magnetic field dependent dielectric and electric transport properties. The simultaneous occurrence or absence of CMC and CMR effects implies that the CMC in the annealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination of CMR and Maxwell-Wagner effect.
TL;DR: In this article , the terahertz response of a bulk single crystal of La$ 0.875$Sr$ 1.125$MnO$_3$ at around its Curie temperature was studied, observing large changes in the real and imaginary parts of the optical conductivity as a function of magnetic field.
Abstract: We have studied the terahertz response of a bulk single crystal of La$_{0.875}$Sr$_{0.125}$MnO$_3$ at around its Curie temperature, observing large changes in the real and imaginary parts of the optical conductivity as a function of magnetic field. The terahertz resistance and capacitance extracted from the optical conductivity rapidly increased with increasing magnetic field and did not show any sign of saturation up to 6 T, reaching 60% and 15%, respectively, at 180 K. The observed terahertz colossal magnetoresistance and magnetocapacitance effects can be qualitatively explained by using a two-component model that assumes the coexistence of two phases with vastly different conductivities. These results demonstrate the potential use of perovskite manganites for developing efficient terahertz devices based on magnetic modulations of the amplitude and phase of terahertz waves.
TL;DR: In this article, a modification of the theory of "incompressible" regions in an ideal spinless inhomogeneous magnetized 2D electronic system near points on the electron density profile n(x) with an integer filling factor is proposed.
Abstract: A modification of the theory of “incompressible” regions in an ideal spinless inhomogeneous magnetized 2D electronic system near points on the electron density profile n(x) with an integer filling factor is proposed. Such regions leads to the appearance of a finite capacitance between the parts of the 2D system that are separated by an incompressible channel, so that capacitive methods can be used to investigate such a system. The Corbino configuration is especially convenient for these purposes. The parameters of the “incompressible” channel in a Corbino disk with a spatially inhomogeneous 2D electronic system in the presence of an individual point, near the channel, on the electron density profile with an integer magnetic filling factor are determined. The magnetocapacitance between the edges of the Corbino disk separated by an incompressible interlayer is found for cases of practical interest. It is shown that this magnetocapacitance contains direct information about the width of the integer strip.
20 Sep 1999
TL;DR: In this article, the propagation direction of fractional quantum Hall effect (FQHE) edge states has been investigated via the symmetry properties of the multi-terminal capacitances of a two dimensional electron gas.
Abstract: The propagation direction of fractional quantum Hall effect (FQHE) edge states has been investigated experimentally via the symmetry properties of the multi-terminal capacitances of a two dimensional electron gas. Although strong asymmetries with respect to zero magnetic field appear, no asymmetries with respect to even denominator Landau level filling factor {nu} are seen. This indicates that current-carrying FQHE edge states propagate in the same direction as integer QHE edge states. In addition, anomalous capacitance features, indicative of enhanced bulk conduction, are observed at {nu} = 1/2 and 3/2.