Topic
Magnetoresistance
About: Magnetoresistance is a research topic. Over the lifetime, 30611 publications have been published within this topic receiving 590345 citations.
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IBM1
TL;DR: Mise en evidence d'un interaction d'echange intercouche antiferromagnetique et d'une magnetoconductivite en saturation dans les superreseaux Co/Cr et Co/Ru.
Abstract: We report the discovery of antiferromagnetic interlayer exchange coupling and enhanced saturation magnetoresistance in two new metallic superlattice systems, Co/Cr and Co/Ru. In these systems and in Fe/Cr superlattices both the magnitude of the interlayer magnetic exchange coupling and the saturation magnetoresistance are found to oscillate with the Cr or Ru spacer layer thickness with a period ranging from 12 \AA{} in Co/Ru to \ensuremath{\simeq}18--21 \AA{} in the Fe/Cr and Co/Cr systems.
2,202 citations
TL;DR: In this article, the effect of the spin-orbit interaction on random potential scattering in two dimensions by the renormalization group method is studied. And the localization behaviors are classified in the three different types depending on the symmetry.
Abstract: Effect of the spin-orbit interaction is studied for the random potential scattering in two dimensions by the renormalization group method. It is shown that the localization behaviors are classified in the three different types depending on the symmetry. The recent observation of the negative magnetoresistance of MOSFET is discussed. In recent experiments on MOSFET by Kawaguchi et al.,u it was found that electrons confined in the MOS inversion layer exhibit the negative magnetoresist ance. This effect is closely related to the localization problem in a random potential. In two dimensions, the quantum inter ference is important and, if the impurity scattering is spin-independent, the con ductivity vanishes at zero temperature even when the scattering is very weak. 2>
2,192 citations
Book•
01 Jan 1963
TL;DR: In this paper, the Hartree-Forck approximation is used to calculate energy bands and Fermi Surfaces for semiconductor crystals. But the results of the energy bands do not cover the entire crystal lattice.
Abstract: Mathematical Introduction. Acoustic Phonons. Plasmons, Optical Phonons, and Polarization Waves. Magnons. Fermion Fields and the Hartree--Forck Approximation. Many--Body Techniques and the Electron Gas. Polarons and the Electron--Phonon Interaction. Superconductivity. Bloch Funcations----General Properties. Brillouin Zones and Crystal Symmetry. Dynamics of Electronics in a Magnetic Field: de Hass--van Alphen Effect and Cyclotron Resonance. Magnetoresistance. Calculation of Energy Bands and Fermi Surfaces. Semiconductor Crystals: I. Energy Bands, Cyclotron Resonance and Impurity States. Semiconductor Crystals: II. Optical Absorption and Excitons. Electrodynamics of Metals. Acoustic Attenuation in Metals. Theory of Alloys. Correlation Functions and Neutron Diffraction by Crystals. Recoilless Emission. Greena s Functions----Application to Solid State Physics. Appendixes.
2,165 citations
TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Abstract: A new GaAs‐based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x‐ray diffraction and shown to increase with the increase of Mn composition, x. Well‐aligned in‐plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer.
2,072 citations
TL;DR: In this paper, an ordered double perovskite (Sr2FeMoO) was shown to exhibit intrinsic tunnelling-type magnetoresistance at room temperature.
Abstract: Colossal magnetoresistance—a huge decrease in resistance in response to a magnetic field—has recently been observed in manganese oxides with perovskite structure. This effect is attracting considerable interest from both fundamental and practical points of view1. In the context of using this effect in practical devices, a noteworthy feature of these materials is the high degree of spin polarization of the charge carriers, caused by the half-metallic nature of these materials20,21; this in principle allows spin-dependent carrier scattering processes, and hence the resistance, to be strongly influenced by low magnetic fields. This type of field control has been demonstrated for charge-carrier scattering at tunnelling junctions2,3 and at crystal-twin or ceramic grain boundaries4,5, although the operating temperature of such structures is still too low (⩽150 K) for most applications. Here we report a material—Sr2FeMoO6, an ordered double perovskite6—exhibiting intrinsic tunnelling-type magnetoresistance at room temperature. We explain the origin of this behaviour with electronic-structure calculations that indicate the material to be half-metallic. Our results show promise for the development of ordered perovskite magnetoresistive devices that are operable at room temperature.
2,065 citations