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Showing papers on "Mask inspection published in 1981"


Patent
31 Mar 1981
TL;DR: In this article, a method and apparatus for receiving two sets of digitized scan data from two optical detectors which simultaneously scan two supposedly identical portions of a photomask for comparing the two set of scan data to detect defects, and for evaluating the defect data to determine whether or not it represents real defect information or false defect information.
Abstract: A method and apparatus for receiving two sets of digitized scan data from two optical detectors which simultaneously scan two supposedly identical portions of a photomask for comparing the two sets of scan data to detect defects, and for evaluating the defect data to determine whether or not it represents real defect information or false defect information. Scan lines containing defect data are scanned twice to produce two sets of defect data and the two sets are then compared to produce a real defect data set including only defects detected in both scans. False defects are thus eliminated from the final data set.

83 citations


Patent
04 Apr 1981
TL;DR: In this article, a substrate completed pattern formation in an electron beam exposure device and scanning is done wherein the reflection is detected and compared with the pattern data, and a high accurate mask inspection by the electron beams are perfomred.
Abstract: PURPOSE:To permit a high accurate pattern inspection in a short time by accommodating a substrate completed pattern formation in an electron beam exposure device and scanning is done wherein the reflection is detected and compared with the pattern data CONSTITUTION:Patterns 9 are depicted by an electron beam exposure device and substrate to be tested 7 which completed such processes as development, etching or the like is again mounted on the stage of the electron beam exposure device Next, the electron beams 13 scan the whole surface of the substrate to be tested 7 by the same way as that done at the time of pattern depiction and by deflecting the electronbeams 13 The above is done under the condition that the electron beams 13 are always irradiated And emission electrons 14 generated when the electron beams 13 are irradiated to the substrate to be tested 7 are detected by a detector 15 and the emission electrons 14 are compared with the pattern data at the time of pattern depiction to detect defects In this way, a high accurate mask inspection by the electron beams are perfomred

3 citations