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Mask inspection

About: Mask inspection is a research topic. Over the lifetime, 1072 publications have been published within this topic receiving 8696 citations.


Papers
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Proceedings ArticleDOI
06 May 2005
TL;DR: In this paper, a method of modeling phase defect for application of RCWA is provided, which transforms the multilayer structure deformed by defect into straight multillayer structure with inhomogeneous dielectric constant.
Abstract: Rigorous coupled-wave analysis(RCWA) is applied to computing near-field of mask scattered by patterned absorber and defects buried in Mo/Si multilayer. Especially, a method of modeling phase defect for application of RCWA is provided, which transforms the multilayer structure deformed by defect into straight multilayer structure with inhomogeneous dielectric constant. This mask near-field is used to get the aerial image as well as mask inspection image of confocal microscope. Using these simulation methods, printability of both phase and amplitude defect are investigated over various size of defect. This study shows that the change in critical dimension(CD) of line and space pattern increases linearly with defect height of phase defect, while increases nonlinearly with that of amplitude defect. A modeling of confocal microscopy is also shown with an example of actinic inspection simulation.

4 citations

Patent
02 Jan 2002
TL;DR: In this paper, a method to use a pattern section without extra serif to correct the polygon feature pattern with at least one inner corner is provided, which can achieve effective OPC without adding any extra data point.
Abstract: The present invention is provided a method to use a pattern section without extra serif to correct the polygon feature pattern with at least one inner corner. Such that the polygon feature pattern with at least one inner corner can achieve effectively OPC (optical proximity correction) without adding any extra data point. Therefore, the present invention can instead of the conventional serif and achieves the effective OPC. In addition, the mask writing time is also improved since the original feature pattern is divided into a few rectangular-shaped mask writing units or trapeze-shaped mask writing units for regular mask writing, and the inner corner is/are not in the middle of each divided mask writing units. The mask inspection is also simplified and easier to calibration since a simple geometry other than complex serif is used.

4 citations

Patent
06 Apr 1977
TL;DR: In this article, the cross-reference inspection of the original pictures and the data is performed by turning pattern information of original pictures to digital information and operate the same together with the information signals of data.
Abstract: PURPOSE:To turn pattern information of original pictures to digital information and operate the same together with the information signals of data thereby making possible the cross-reference inspection of the original pictures and the data

4 citations

Patent
02 Jul 2002
TL;DR: Secondary mask pattern elements are used to interconnect isolated sub-patterns of a mask pattern as mentioned in this paper, which prevents mask damage due to electrostatic discharge, problems with mask inspection, and problem with mask repair due to different electrostatic charge accumulation on various isolated subpatterns.
Abstract: Secondary mask pattern elements are used to interconnect isolated sub-patterns of a mask pattern. The interconnection of the isolated sub-patterns prevents different electrostatic charge accumulation on the various isolated sub-patterns. This prevents mask damage due to electrostatic discharge, problems with mask inspection, and problems with mask repair due to different electrostatic charge accumulation on various isolated sub-patterns. The mask is used to transfer the mask pattern to a layer of photosensitive material. The width of the secondary sub-pattern elements are sufficiently small relative to the wavelength of the light used to transfer the mask pattern to the photosensitive material that the secondary sub-pattern elements are not transferred to the photosensitive material.

4 citations

Proceedings ArticleDOI
01 Oct 2009
TL;DR: NFT and Brion as discussed by the authors jointly developed a mask-image based printability verification system with functions combining their respective technologies with the results from ASET's research, which is necessary to ascertain suppression of MEEF incurred by the combination of parameters such as LER and defects of SRAF.
Abstract: In addition to the conventional demands for high sensitivities with which the mask inspection system detects the minute size defects, capability to extract true defects from a wide variety of patterns that should not be counted as pseudo defects has been quite demanding. It is necessary to ascertain suppression of MEEF incurred by the combination of parameters such as LER and defects of SRAF. NFT and Brion are jointly developing a mask-image based printability verification system with functions combining their respective technologies with the results from ASET's research. This report describes such defect detection results and introduces the development of a mask inspection system with printability verification function.

4 citations

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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202110
202016
201924
201819
201727
201632