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Mask inspection

About: Mask inspection is a research topic. Over the lifetime, 1072 publications have been published within this topic receiving 8696 citations.


Papers
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Proceedings ArticleDOI
10 May 2005
TL;DR: In this article, an actinic Aerial Image Metrology System (AIMS) revealed a 1.5 mm region on the mask with up to 59% transmission reduction at 193 nm.
Abstract: For years there has been a mismatch between the photomask inspection wavelength and the usage conditions. While the non-actinic inspection has been a source for concern, there has been essentially no evidence that a defect "escaped" the mask production process due to the inspection mismatch. This paper will describe the discovery of one such defect, as well as the diagnostic and inspection techniques used to identify the location, analyze the composition, and determine the source of the printed wafer defect. Conventional mask inspection techniques revealed no defects, however an actinic Aerial Image Metrology System (AIMS) revealed a 1.5 mm region on the mask with up to 59% transmission reduction at 193 nm. Further diagnostics demonstrated a strong wavelength dependence which accounted for the near invisibility of the defect at I line (365 nm) or even DUV (248 nm) wavelengths, which had 0% and 5% respective transmission reductions. Using some creative imaging techniques via AIMS tool and modeling, the defect was deduced to have a three dimensional Gaussian absorption character, with total width approximately 1.5 mm. Several non-destructive diagnostic techniques were developed to determine the composition and location of the defect within the substrate. These results will be described in addition to identifying methods for ensuring product quality in the absence of actinic inspection.

4 citations

Proceedings ArticleDOI
09 Sep 2013
TL;DR: In this article, an algorithm that can automatically quantify critical dimensions in images from Mask inspection tools with a very high level of accuracy is presented, which can be run with much tighter settings, resulting in more false defect detections that can then be filtered using the algorithm described here.
Abstract: This article presents results from an algorithm that can automatically quantify critical dimensions in images from Mask inspection tools with a very high level of accuracy. Using such an algorithm the inspection systems can be run with much tighter settings, resulting in more false defect detections that can then be filtered using the algorithm described here. Such a technique could potentially make the inspection system suitable for inspecting photo-masks beyond its practical limitation.

4 citations

Proceedings ArticleDOI
02 Jun 2004
TL;DR: The paper shows, that during the detection of semi-transparent defects, VSA allow, in particular, to get maximum available amplitude contrast of the CCD-signals on the image model, which allows also the inspection system to work without using maximum sensitivity settings with the same detection capability.
Abstract: The paper presents the description of the new Virtual Scanning Algorithms (VSA), providing sub-pixel resolution. VSA are the algorithms developed specially for EM-6029B (Fig. 1) and EM-6329 (Fig. 2) die-to-database reticle and photomask inspection systems of "Planar" concern (KBTEM-OMO). For the providing of the effective building in of these algorithms to the inspection system, has being created the special two-levels dynamic model of optical image. The paper presents also the building principles of this model. This model allows, on the one hand, to perform the precise alignment of optical image (collected from the reticle) wit a reference image (generated from the design data), and on the other hand -- to perform the analysis of optical image to get optimum mutual position of the digitization grid of the inspection system and detected defects position. VSA calculate the second level of this model. Both the VSA and the second level of dynamic model of optical image are presented the Virtual Scanning sub-System (VSS). VSS allows to increase the detection capability of automatic reticle inspection system by means of achievement sub-pixel resolution. The paper shows, that during the detection of semi-transparent defects, VSA allow, in particular, to get maximum available amplitude contrast of the CCD-signals on the image model. Accordingly, VSA allow also the inspection system to work without using maximum sensitivity settings with the same detection capability. As a result is the reduction of the risk of false or nuisance defects detection, while keeping maximum sensitivity to printable defects. The VSS design and in-house test results are discussed.

4 citations

Journal ArticleDOI
TL;DR: In this article, the authors evaluate the performance of a reflectivemode EUV mask scanning microscope (RESCAN), with three different absorber materials (hydrogen silsesquioxane, TaBN, and Ni).
Abstract: Background: One of the challenges for extreme ultraviolet (EUV) lithography is the mitigation of mask three-dimensional effects arising from the oblique incident angle and the mask topography. As the scanners’ numerical aperture and the pattern aspect ratio increase, these effects become more prominent. A potential solution to reduce them consists in replacing the current TaBN absorber for a higher-k material. Aim: We demonstrate the potential of a mask inspection platform to evaluate the impact of different absorber materials on actinic defect inspection. Approach: We evaluate the performance of a reflective-mode EUV mask scanning microscope (RESCAN), our actinic lensless inspection tool, with three different absorber materials (hydrogen silsesquioxane, TaBN, and Ni). We study the effect of these materials on the image formation and compare the defect maps. Results: The Ni absorber mask exhibits a better contrast compared to the TaBN one, even though the thickness of the layers differs only by 10 nm. Programmed defects are localized and detected with a high signal-to-noise ratio (SNR). Conclusions: The gain in contrast for the Ni absorber being significant, the SNR is higher for a smaller defect in a TaBN absorber photomask. RESCAN allows the evaluation of the performance of absorber materials in defectivity and image formation on small samples.

4 citations

Patent
31 Aug 2005
TL;DR: In this paper, the first and second shapes representing DNIRs along with any single contiguous DNIR are used to inspect the mask for unintentional defects while avoiding intentional defects, and if the violated rule is corrected for by generating a single contiguous DLIR by overlapping the overlapping shapes.
Abstract: Methods, systems, program storage devices and computer program products for mask inspection that automate the detection and placement of do not inspect regions (“DNIR”) for intentionally induced defects on masks. A location of an intentional defect is identified on a mask, and then logic relating to this location is translated into a shape that represents a DNIR for the intentional defect. A second shape representing another DNIR of the mask is provided. It is then determined if the first and second shapes for DNIRs violate a processing rule of the inspection tool, and if so, the violated rule is corrected for by generating a single contiguous DNIR by overlapping the first and second shapes. The inspection tool then utilizes the first and second shapes representing DNIRs, along with any single contiguous DNIRs, to inspect the mask for unintentional defects while avoiding intentional defects.

4 citations

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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202110
202016
201924
201819
201727
201632