Topic
Mask inspection
About: Mask inspection is a research topic. Over the lifetime, 1072 publications have been published within this topic receiving 8696 citations.
Papers published on a yearly basis
Papers
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21 Aug 2008
TL;DR: In this article, the authors proposed a mask inspection light source device having a high performance and compact configuration, and provided a mask-inspection apparatus using the mask-light source device.
Abstract: PROBLEM TO BE SOLVED: To provide a mask inspection light source device having a high-performance and compact configuration, and to provide a mask inspection apparatus using the mask inspection light source device. SOLUTION: The mask inspection apparatus 1 according to one embodiment of the present invention has a laser beam source and, by using the laser beam source, outputs a first laser beam having a wavelength of 200 nm or less by sum frequency generation and outputs a second laser beam of a wavelength of at least 40 nm apart from the first laser beam of a wavelength of 200 nm or less. Further, the first laser beam is the sum frequency of emission beam from titanium sapphire laser and the second laser beam. COPYRIGHT: (C)2008,JPO&INPIT
2 citations
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26 Aug 2003TL;DR: Aera193, a new inspection system using aerial imaging as inspection methodology, is presented in this paper, where the authors present the use of Aera193 for mask inspection of aggressive OPC features.
Abstract: Inspection of aggressive OPC represents one of the major challenges for today's mask inspection methodologies. Systems are phased with high-density layouts, containing OPC features far below the resolution limit of conventional inspection systems. This causes large amounts of false and nuisance defects, especially on production applications. The paper presents the use of Aera193, a new inspection system using aerial imaging as inspection methodology.
2 citations
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TL;DR: An automatic system that combines actions in both the image domain as well as in the layout database domain for accurate mask-defect analysis and application of design criticality is presented in this paper.
Abstract: An automatic system that combines actions in both the image domain as well as in the layout-database domain for
accurate mask-defect analysis and application of design criticality will be presented. In this paper we will emphasize the
qualification and calibration of the system and its various pieces of functionality with the use of programmed defect
masks and low-voltage mask CD-SEM measurement data. Results on 1D and 2D programmed defects of various natures
are reported in dense layout as well as in real memory design layout. The results show that the system can accurately
extract mask CD-errors and defect sizes at a resolution far below that of the pixel-size of state-of-the-art mask-defect
inspection tools at nanometer resolution.
We will further demonstrate that mask-defect-inspection data can contain optical anomalies when defect or residual
feature sizes are smaller than the inspection wavelength. Mask inspection images then no longer show the real defect.
These anomalies can be analyzed with the system using advanced image actions.
Finally, we will demonstrate the capability to calculate the effects that defects have on final wafer printability even
without the need for input layout. Hence, model-based defect properties can be combined with rule-based defect
properties as well as multi-layer, design-based criticality-region properties for utter flexibility in defect disposition
capability.
2 citations
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06 Jul 1999TL;DR: In this article, a programmable X-ray mask with various defects such as dimension error, position shift and absorber defect sizes for typical patterns of lines-and-spaces, hole and 2-dimensional patterns is presented.
Abstract: Improvement in X-ray mask inspection system is essential for the realization of X-ray lithography. To evaluate the sensitivity of the present inspection system, we made a programmed X-ray mask, with various defects such as dimension error, position shift and absorber defect sizes for typical patterns of lines-and-spaces, hole and 2-dimension patterns. In this work, we evaluated the sensitivity of defect inspection system, and investigated the printability of the X-ray mask defects. Moreover, in order to specify the sensitivity of the next generation inspection system, we investigated the printability of the X-ray mask defects by using the X-ray lithographic simulator Toolset developed by University of Wisconsin. In this paper, we will present on defect inspectivity by using SEMSpec inspection system and the simulation.
2 citations
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25 Oct 2007TL;DR: Sensitivity of newly developed photo mask inspection tool with reflective optic was evaluated for 45nm DRAM device as mentioned in this paper, which was used to get the required defect sensitivity of mask, printability of mask defect on wafer were simulated using in house======simulation tool.
Abstract: Sensitivity of newly developed photo mask inspection tool with reflective optic was evaluated for 45nm DRAM device.
To get the required defect sensitivity of mask, printability of mask defect on wafer were simulated using in house
simulation tool. Simulation results were compared with inspection results. Characteristic and sensitivity comparison
between conventional transmissive and reflective optic tools were evaluated for several types of mask layer of 45nm and
55nm DRAM according to pixel size of detector of inspection tools. This reflective optic with short working distance
was equivalent in sensitivity to transmissive optic tool. Mask for 45nm DRAM can be qualified by current status of the
art inspection tools.
2 citations