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Mask inspection

About: Mask inspection is a research topic. Over the lifetime, 1072 publications have been published within this topic receiving 8696 citations.


Papers
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Proceedings ArticleDOI
28 Jun 2013
TL;DR: In this paper, a projection electron microscopy (PEM) system was developed to realize pattern defect inspection for 1Xnm EUV mask, which enables the inspection in high resolution and high throughput as compared with conventional DUV and EB inspection systems.
Abstract: In order to realize pattern defect inspection for 1Xnm EUV mask, we are developing a novel projection electron microscopy (PEM) system; which enables us to make the inspection in high resolution and high throughput as compared with conventional DUV and EB inspection systems. To achieve the specification target, e.g., sensitivity of 16nm size in pattern defect and inspection speed of 19 hours/100mm square, we have examined to clear the required progress as compared to the current optical system for PEM; In order to meet the required progress, we made a new design concept and developed a new optical system, which comprises an exposure and an imaging electron optics. In this paper, we describe the evaluation on the basic performance of the developed optical system as concerning to the required progress: 1) transmittances over 10 times on the developed exposure optics and over 2 times on the developed imaging optics; 2) electron imaging being higher energy over 5 times and MTF inclination in hp44~64nm L/S pattern. The results show the developed optical system on the novel PEM is capable to meet the progress for 1Xnm EUV mask inspection.

2 citations

Patent
04 Nov 2011
TL;DR: In this article, a defect estimation method for estimating a defect on a mask, the influence of the defect on the wafer and the degree of improvement by repair, and an inspection device and inspection method for facilitating a defect determination processing and for estimating the influence on a wafer image.
Abstract: PROBLEM TO BE SOLVED: To provide a defect estimation device and a defect estimation method for estimating a defect on a mask, the influence of the defect on a wafer and the degree of improvement by repair, and to provide an inspection device and an inspection method for facilitating a defect determination processing and for estimating a defect on a mask and the resultant influence on a wafer image.SOLUTION: The acquired mask data of the defect portion of mask inspection results 205 is sent to a simulated repair circuit 300 to be simulatedly repaired. The acquired mask data simulatedly repaired is returned to the mask inspection results 205 again and thereafter sent to a wafer transfer simulator 400 along with a reference image at the corresponding portion. Wafer transfer images estimated by the wafer transfer simulator 400 are sent to a comparing circuit 301 and, when it is determined that there is a defect, the coordinate and the wafer transfer image as a basis for the defect determination are stored as transfer image inspection results 206. The mask inspection results 205 and the transfer image inspection result 206 are sent to a review device 500.

2 citations

Proceedings ArticleDOI
25 Sep 1989
TL;DR: An image analysis system for mask inspection and a pattern recognition technique is described for registration and checking of masks, which has the advantage that the distortions in the image do not affect the accuracy of the pattern matching algorithm.
Abstract: An image analysis system for mask inspection is presented. A pattern recognition technique is described for registration and checking of masks. This approach has the advantage that the distortions in the image do not affect the accuracy of the pattern matching algorithm. The hardware, consisting of an image acquisition and display system, is discussed. The software used for the removal of noise, extraction of edges, and the corrections for image distortions is also discussed. The algorithm used for the inspection is defined. The results of the algorithm are presented, along with its capability to detect faults. The turnaround time and the future scope of the work are discussed. >

2 citations

Proceedings ArticleDOI
01 Oct 2009
TL;DR: In this paper, a single-die detection method based on an optical model calculated from the mask design information, based on the optical modeling of the inspection optics, is proposed, which can be directly compared to the real image captured by the inspection machine.
Abstract: Advanced immersion lithography is enabled by a combination of optimized off-axis illumination, highly complex design patterns, and photo-mask technologies with several transmission and phase levels. The pattern on the mask, for 45nm half pitch and below, shows little resemblance to the target printed pattern, which is revealed only when illuminated with the correct aerial exposure conditions. The main pattern is modified or surrounded by OPC and SRAF features which are comparatively much smaller. The small size and irregularity of these features present a challenge to mask inspection process, both due to their size and the mask manufacturing process sensitivity. While most masks are inspected using a die-to-die scheme, single-die masks use an alternative detection scheme based on comparing the mask image to mask design data. In high-resolution inspection tools, the resolution must be sufficient to resolve the sub-resolution features, and compare them to the mask design. In aerial inspection tools, which have optics that mimic the illumination and collection exposure conditions over the mask as in a scanner, the inspection image depicts the mask at the scanner resolution. As a consequence, in the aerial image, as in the scanner, sub-resolution features are not resolved and do not develop. Therefore, a conventional comparison to a database is not possible. Here, we present a single die detection scheme that takes a new approach - an optical model is calculated from the mask design information, based on an optical modeling of the inspection optics response. The result is an aerial model image, which predicts the aerial image created by the inspection tool, and may be directly compared to the real image captured by the inspection machine. We describe herein the theoretical foundation of the Die-to-Model scheme, and the practical computational implementation. As a consequence of the high quality modeling, the detection scheme employed for single die inspection performance is identical to the die-to-die scheme,. This new die to model scheme, implemented on the Aera2 aerial mask inspection tool is successfully implemented in 4x memory and 32nm generation logic mask production at leading mask shops.

2 citations

30 Apr 1992
TL;DR: In this article, a test mask with various programmed shifter defects was inspected by means of a die-to-die inspection system and printed in positive resist with an i-line stepper.
Abstract: Because of the high printability of shifter defects in phase-shifting masks, it is worthwhile to characterize the inspection and printing of the shifter defects. The detectability and printability of shifter defects as a function of size and location have been investigated by experiments and simulation. A test mask with various programmed shifter defects was inspected by means of a die-to-die inspection system and printed in positive resist with an i-line stepper. Corner defects are difficult to detect and have low printability. A defect located in small features has high printability. We have also investigated the detectability and printability of the phase angle defects which have phase angles other than 180°. Defects with 120° to 180° phase angles have high printability. Defects with phase angles below 90° are not printed.

2 citations

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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202110
202016
201924
201819
201727
201632