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Mask inspection

About: Mask inspection is a research topic. Over the lifetime, 1072 publications have been published within this topic receiving 8696 citations.


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Patent
Xu Yin1, Gu Wenfei1, Rui-Fang Shi1
08 Aug 2016
TL;DR: In this article, a design database for fabrication of a mask includes polygons that are each defined by a set of vertices, and any of the polygons are grouped together.
Abstract: Disclosed are methods and apparatus for providing feature classification for inspection of a photolithographic mask. A design database for fabrication of a mask includes polygons that are each defined by a set of vertices. Any of the polygons that abut each other are grouped together. Any grouped polygons are healed so as to eliminate interior edges of each set of grouped polygons to obtain a polygon corresponding to a covering region of such set of grouped polygons. Geometric constraints that specify requirements for detecting a plurality of feature classes are provided and used for detecting a plurality of feature classes in the polygons of the design database. The detected features classes are used to detect defects in the mask.

2 citations

Patent
14 Jun 2002
TL;DR: In this paper, the authors proposed a mask inspection apparatus which has a function to prevent the occurrence of crosstalks with the detector itself and makes exact and rapid inspection of masks.
Abstract: PROBLEM TO BE SOLVED: To provide a mask inspection apparatus which has a function to prevent the occurrence of crosstalks with the detector itself and makes exact and rapid inspection. SOLUTION: The electronic beam released from an electron gun 1 forms a crossover in a prescribed place by an electrostatic condenser lens 8. This electron beam is then imaged on a mask 5 to be inspected by an electrostatic objective lens 4. The electron beam is scanned in x- and y-directions by octapole electrostatic deflectors 2 and 3 and the scanning width thereof is d on the mask 5 to be inspected. A quadrupole axis alignment deflector (aligner) is used for the axis alignment of the electron beam. The electron beam passed through the mask is detected by the detector 7. The detector 7 is arranged in a position sufficiently proximate to the mask 5 to be inspected and is provided with a partition 6 and therefore the electron beams from the adjacent inspection regions are no more detected by the detector 7 and the occurrence of the crosstalks is prevented.

2 citations

Patent
05 Jun 2008
TL;DR: In this article, a light source for mask inspection that has a laser light source, converts the wavelength of laser light outputted from the light source to output laser light at a wavelength of ≤400 nm and to output second harmonic waves of laser Light at a frequency of ≤ 400 nm is used as illumination light for inspection.
Abstract: PROBLEM TO BE SOLVED: To provide a high-performance and compact light source device for mask inspection, and to provide a mask inspection device using the light source device. SOLUTION: The mask inspection device 1 in one embodiment of this invention is equipped with a light source 100 for mask inspection that has a laser light source, converts the wavelength of laser light outputted from the laser light source to output laser light at a wavelength of ≤400 nm and to output second harmonic waves of laser light at a wavelength of ≤400 nm. The second harmonic waves of laser light at a wavelength of ≤400 nm is used as illumination light for inspection. COPYRIGHT: (C)2008,JPO&INPIT

2 citations

Proceedings ArticleDOI
05 Sep 1980
TL;DR: A new algorithm for computing predicted yield is proposed, and a system which automates the computation of this algorithm is described, in addition to permitting on-line collection and storage of inspection data from an automatic photomask inspection system.
Abstract: Existing methods of predicting mask-limited device yield based on average defect density do not account for defect size or superposition of defective dice, since to do so would require a degree of computation which is not feasible with purely manual means. This paper proposes a new algorithm for computing predicted yield, and describes a system which automates the computation of this algorithm, in addition to permitting on-line collection and storage of inspection data from an automatic photomask inspection system. The use of yield predictions obtained thereby for optimizing device yield, or for apportioning the cause of actual degraded yield between the process and the masks, is also discussed.

2 citations

Proceedings ArticleDOI
01 Dec 2017
TL;DR: A defect inspection microscope system for EUV multilayer mask will be used in the process applications by academia and industry to manufacture 22 nm node and below, thus providing detection of the fast and high-resolution mask or Line edge roughness (LER) in photoresist lithography quality.
Abstract: The goal of this study is to construct a defect inspection microscope system for EUV multilayer mask, the beamline19A2 of National Synchrotron Radiation Research Center in Hsinchu was adopted as a light source In a vacuum chamber, a set of EUV mask inspection system was designed and erected to detect defects on the mask In addition, the coherent scattering microscopy was constructed to complete the erection and technology research and development of the EUV mask inspection system This system will be used in the process applications by academia and industry to manufacture 22 nm node and below, thus providing detection of the fast and high-resolution mask or Line edge roughness (LER) in photoresist lithography quality

2 citations

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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202110
202016
201924
201819
201727
201632