Mask inspection

About: Mask inspection is a research topic. Over the lifetime, 1072 publications have been published within this topic receiving 8696 citations.

Apparatus for inspecting shape defect of reticule mask

Abstract: PURPOSE:To provide the apparatus for inspecting the shape defects of a reticule mask which can deal even with the reticule mask inspection after 256M bits. CONSTITUTION:The sectional shapes of the light shielding chromium film patterns on the reticule mask 12 are measured by a stylus micrometer consisting of a cantilever which is a spring-like thin film and is fixed at the base end part, a probe which is mounted to the front end of the cantilever, for example, a displacement detecting mechanism 16 of an optical lever system which irradiates the front end of the cantilever with light by a light projector for condensing the light to a microspot and measures the bend of the cantilver by detecting the reflected light thereof with a light receiving element, and an actuator which drives the displacement detecting mechanism 16 to bring the probe into proximity to the mask while moving a sample base 11 in X, Y directions. The first signal corresponding to the pattern to be inspected of the reticule mask 12 is determined and the shapes or defects of the reticule mask are inspected by comparing the signal and the second signal based on the design data at the time of forming the reticule mask patterns.

Mask inspection method and mask inspection device

Abstract: PROBLEM TO BE SOLVED: To provide a mask inspection device that can improve the defect detection sensitivity. SOLUTION: The mask inspection device 100 includes: a light source 10 irradiating a mask 20 having a first pattern and a second pattern formed therein, which are approximately the same, with approximately the same plurality of illumination beams; photodetectors detecting a plurality of exiting beams from the first pattern and the second pattern each irradiated with the plurality of illumination beams; and a determination unit 17, which calculates a first defect determination signal by using one of exiting beams from the first pattern and one of exiting beams from the second pattern in the plurality of exiting beams, calculates a second defect determination signal by using one of exiting beams from the first pattern except for the exiting beam used for calculation of the first defect determination signal, and by using one of exiting beams from the second pattern, and determines a defect by using the first defect determination signal and the second defect determination signal. COPYRIGHT: (C)2011,JPO&INPIT

Reflective mask inspection device, exposure device, reflective mask, reflective mask inspection method, and exposure method

Abstract: PROBLEM TO BE SOLVED: To provide a reflective mask inspection device capable of inspecting a reflective mask in an in-line manner without spoiling a reflective mask pattern region.SOLUTION: A reflective mask inspection device comprises a shielding plate 21 including a pattern opening 22 arranged so as to cover a reflective mask 30 including a pattern region 31 with an exposure pattern and an inspection region 32 arranged in a position different from the pattern region 31 and formed in a position corresponding to the pattern region 31 and an inspection opening 23 formed in a position corresponding to the inspection region 32. Light is allowed to travel from a side opposite to the reflective mask 30 with respect to a shielding plate 21 toward the reflective mask 30 through the inspection opening 23. However, light is not allowed to travel from the reflective mask 30 side with respect to the shielding plate 21 toward a side opposite to the reflective mask 30 through the inspection opening 23.

The large contour data generation from divided image of photomask pattern of 32 nm and beyond

Abstract: The application of Mask CD-SEM for process management of photomask using two dimensional measurements as photomask patterns become smaller and more complex, [1]. Also, WPI technology application using an optical Mask inspection tool simulates wafer plane images using photomask images [2]. In order to simulate the MEEF influence for aggressive OPC and High-end photomask patterns in 32nm node and beyond, a requirement exists for wide Field of View (FOV) GDS data and tone information generated from high precision SEM images. In light of these requirements, we developed a GDS data extraction algorithm with sub-nanometer accuracy using wide FOV images, for example, greater than 10um square. As a result, we over come the difficulty of generating large contour data without the distortion that is normally associated with acquired SEM images. Also, it will be shown that the evaluation result can be effective for 32 nm applications and beyond using Mask CD-SEM E3620 manufactured by Advantest. On the other hand, we investigate the application example of the wide FOV GDS data. In order to easily compare the acquired GDS data with design data, we explain the separate algorithm with three layer structures for Tri-tone (Ternary) photomask pattern, consisting of an outer pattern and another pattern.