Topic
Mask inspection
About: Mask inspection is a research topic. Over the lifetime, 1072 publications have been published within this topic receiving 8696 citations.
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Patent•
29 Jun 2016
TL;DR: In this paper, an optical image processing module formed by a linear image photo-sensitive element can rapidly scan the surface of the photomask; due to the effect of the light guiding plate of the inclined light guiding unit, the light rays of a light source can shoot the scanning position of the optical imaging module in an inclined manner to improve the focusing effect so as to improve detection rate of pollutants.
Abstract: The invention relates to a photomask inspection machine. An optical image processing module positioned above a carrying table is arranged on a rack; the linear displacement of the optical image processing module relative to the carrying table can be carried out; the optical image processing module can capture the image of a photomask on the carrying table; or an upper detection module is provided with a light guiding unit on one side of the optical image processing module; the light guiding unit is provided with a light source and a light guiding plate, wherein the light guiding plate can guide the light rays of the light source to shoot at a scanning position of the optical image processing module in a linear manner; therefore, the optical image processing module formed by a linear image photosensitive element can rapidly scan the surface of the photomask; due to the effect of the light guiding plate of the inclined light guiding unit, the light rays of the light source can shoot the scanning position of the optical image processing module in an inclined manner to improve the focusing effect so as to improve the recognition rate of pollutants; and therefore, the inspection efficiency and accuracy can be effectively improved, unnecessary manpower and misjudgment can be reduced, and the percent of pass of the subsequent processing of wafers can be further improved.
TL;DR: A data flow process for mask manufacturing in which design intent information is referred to in order to reduce TAT of mask manufacturing processes and the idea of MDR and the software system that is built for DI extraction are introduced.
Abstract: The increase in the time required for data processing, mask drawing, and inspection of photomask, has led to substantial increase in mask manufacturing cost. This has become one of the major challenges in the semiconductor industry. We have developed a data flow process for mask manufacturing in which we refer to design intent information in order to reduce TAT of mask manufacturing processes. We convert design level information “Design Intent (DI)” into priority information of mask manufacturing data known as “Mask Data Rank (MDR)” so that we can identify and sort out the importance of mask patterns from the view point of the design side. As a result, we can reduce mask writing time and mask inspection time. Our objective is to build efficient data flow conversion system from DI to MDR. In this paper we introduce the idea of MDR and the software system that we built for DI extraction. Then we show the experimental results with actual chip data. Lastly we will discuss related issues and their solutions.
Patent•
04 Feb 1992
TL;DR: In this paper, the authors proposed a method to reduce data processing in an exposure device and facilitate the handling of the data in the exposure device by executing synthetic processing between pattern shape information and pattern arrangement information.
Abstract: PURPOSE:To reduce data to be processed in an exposure device and to facilitate the handling of the data in the exposure device by executing synthetic processing between pattern shape information and pattern arrangement information in the exposure device. CONSTITUTION:The exposure device 5 is provided with a pattern arrangement information storing means 7, pattern arrangement information is stored in the means 17 and the pattern shape information and the pattern arrangement information are synthesized by the device 5 to form mask producing exposure data. Since user information and the pattern arrangement information are synthesized by the exposure device 5, the data to be processed by the device 5 can be reduced and compressed, data handling in the device 5 can easily be executed, the reliability of exposure can be improved, and rapid data processing can be attained.
01 Oct 2013
TL;DR: In this article, a new inspection approach was developed by using computational image calibration based wafer scanner simulation, which analyzes the aerial image to differentiate between printing and non-printing features, and applying the appropriate sensitivity threshold.
Abstract: As Moore’s Law continues its relentless march toward ever smaller geometries on wafer, lithographers who
had been relying on the implementation of a solution using EUV lithography are faced with increasing
challenges to meet requirements for printing sub-2x nm half-pitch (HP). The available choices rely on 193 nm DUV immersion lithography, but with decreasing k1 values and thus shrinking process windows. To overcome these limitations, two techniques such as inverse lithography technology (ILT) and source mask optimization (SMO) were introduced by computational OPC scheme.
From a mask inspection viewpoint, the impact of both ILT and SMO is similar – both result in photomasks that have a large quantity of sub-resolution assist features (SRAFs). These SRAFs are challenging for mask-makers
to pattern with high fidelity and accuracy across a full-field mask, and thus mask inspection is challenged to maintain a high sensitivity level on primary mask features while not suffering from a high nuisance detection rate on the SRAF features. To solve this particular issue, new inspection approach was developed by using computational image calibration based wafer scanner simulation. This paper will be described the new
capabilities, which analyzes the aerial image to differentiate between printing and non-printing features, and
applying the appropriate sensitivity threshold. All analysis will be shown comparing results with and without the
new capabilities, with an emphasis on inspectability improvements and nuisance defect reduction to improve
mask cycle time.
11 May 2009
TL;DR: TeraScanXR as mentioned in this paper extends the inspection capability and sensitivity of the TeraScanHR to meet the challenges of shrinking feature size on photomasks and growing database size. But it does not have the capability to process 0.5-1
Abstract: As optical lithography progresses towards 32nm node and beyond, shrinking feature size on photomasks and growing
database size provides new challenges for reticle manufacture and inspection. The new TeraScanXR extends the
inspection capability and sensitivity of the TeraScanHR to meet these challenges. TeraScanXR launches a new function
that can dynamically adjust defect sensitivities based on the image contrast (MEEF) -- applying higher sensitivity to
dense pattern regions, and lower sensitivity to sparse regions which are lithographically less significant. The defect
sensitivity of TeraScanXR for Die-to-Die (DD) and Die-to-Database (DDB) inspection mode is improved by 20-30%,
compared with TeraScanHR. In addition, a new capability is introduced to increase sensitivity specifically to long CD
defects. Without sacrificing the inspection performance, the new TeraScanXR boosts the inspection throughput by 35%-
75% (depending upon the inspection mode) and the dataprep speed by 6X, as well as the capability to process 0.5-1
Terabyte preps for DDB inspection.