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Mask inspection

About: Mask inspection is a research topic. Over the lifetime, 1072 publications have been published within this topic receiving 8696 citations.


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Patent
09 May 2011
TL;DR: In this article, an EUV mask inspection device consisting of a light source chamber, an auxiliary chamber, and an inspection optical system chamber is proposed to improve the utilization efficiency of the EUV light source.
Abstract: PROBLEM TO BE SOLVED: To improve utilization efficiency of EUV light in an EUV mask inspection device which uses an EUV light source.SOLUTION: An EUV mask inspection device comprises: light source chamber including EUV light generation means for generating EUV light using a light source gas and light source gas supply means for supplying the light source gas to the EUV light generation means; an auxiliary chamber including a filter which selectively transmits the EUV light generated by the EUV light generation means and first evacuation means; and an inspection optical system chamber including an inspection optical system which leads the EUV light which transmitted the filter to an inspection object and second evacuation means. In the EUV mask inspection device, the light source chamber, the auxiliary chamber, and the inspection optical system chamber are spatially connected. The first evacuation means and the second evacuation means perform differential evacuation between the auxiliary chamber and the inspection optical system chamber.

8 citations

Proceedings ArticleDOI
11 Mar 2002
TL;DR: An integrated method to find small un-inspectable features (Inspection Rule Violations or IRVs) in the data and either fix them or declare that area as not inspectable is described, resulting in improved mask inspection TPT as well as early detection and correction of certain design or synthesis errors.
Abstract: Many mask patterns contain small un-inspectable features (Inspection Rule Violations or IRVs) that create significant through-put time (TPT) impact at mask inspection due to excessive false defects. These small features include a) drawn test designs purposely intended to be small for evaluating process capabilities, and b) un-intended small features that result from errors such as overlap of designs, gaps between cells or synthesis errors. Typically, an IRV is a feature smaller than the minimum feature size capability of the mask inspection tool. This paper describes an integrated method to find such IRVs in the data and either fix them or declare that area as not inspectable. The method includes documented drawn size limits for inspectability, data checks at drawn level, data checks at post-fracture, and functions to define 'Do Not Inspect Regions (DNIRs)' for any remaining IRVs in the data. Data checking at post-fracture must comprehend Optical Proximity Correction (OPC), which generates small features that are not IRVs. The defined DNIRs are listed in the jobdeck for automated inspection data preparation with no engineering intervention. The result is improved mask inspection TPT as well as early detection and correction of certain design or synthesis errors.

8 citations

Proceedings ArticleDOI
23 Oct 2015
TL;DR: Based on the unresolved pattern inspection capability study using DUV mask inspection tool NPI-7000 for 14nm/10nm technology nodes, Wang et al. as discussed by the authors developed a new optical imaging method and tested its inspection capability for the minute pattern smaller than the optical resolution.
Abstract: Mask inspection tool with DUV laser source has been used for Photo-mask production in many years due to its high sensitivity, high throughput, and good CoO. Due to the advance of NGL technology such as EUVL and Nano-imprint lithography (NIL), there is a demand for extending inspection capability for DUV mask inspection tool for the minute pattern such as hp4xnm or less. But current DUV inspection tool has sensitivity constrain for the minute pattern since inspection optics has the resolution limit determined by the inspection wavelength and optics NA. Based on the unresolved pattern inspection capability study using DUV mask inspection tool NPI-7000 for 14nm/10nm technology nodes, we developed a new optical imaging method and tested its inspection capability for the minute pattern smaller than the optical resolution. We confirmed the excellent defect detection capability and the expendability of DUV optics inspection using the new inspection method. Here, the inspection result of unresolved hp26/20nm pattern obtained by NPI-7000 with the new inspection method is descried.

8 citations

Proceedings ArticleDOI
Edita Tejnil1, Alan R. Stivers1
30 Dec 1999
TL;DR: In this paper, the overall defect sensitivity requirements and scaling trends in inspection of patterned masks are discussed, and the data acquisition rates of several hundred megapixels/sec required during inspection of 0.07-micrometer technology masks and to maintain light intensities below the damage threshold of mask materials are discussed.
Abstract: The final qualification of masks for extreme ultraviolet (EUV) lithography may require defect inspection utilizing EUV radiation. To properly address inspection of masks for the 0.07-micrometer technology generation targeted by EUV lithography, the overall defect sensitivity requirements and scaling trends in inspection of patterned masks are discussed. To achieve the data acquisition rates of several hundred megapixels/sec required during inspection of 0.07-micrometer technology masks and to maintain light intensities below the damage threshold of mask materials, simultaneous acquisition of the inspection signal from multiple pixels on the mask, rather than the serial pixel data collection currently used in many mask inspection tools, will become necessary. The high data rates needed for future mask inspection technologies impose requirements on the minimum pulse repetition rate of the light source used in the inspection and influence the EUV mask inspection system design options. EUV light sources that either produce continuous-wave radiation or operate at pulse repetition rates of at least 10 - 100 kHz will be needed for mask inspection relevant to EUV technology, assuming that data from 104 or more pixels can be measured in parallel. The average EUV light source power requirements for an at- wavelength, bright-field EUV mask inspection system are estimated to be on the order of 1 W. The basic technologies for sources, optics, and detectors needed for at-wavelength EUV mask inspection currently exist but significant efforts to develop the numerous system components would be necessary to implement practical EUV mask inspection tools.

8 citations

Proceedings ArticleDOI
Ralf Buengener1
TL;DR: This article presents strategies to overcome the defect inspection challenges expected at the 14 nm technology node: Smaller feature and defect sizes will require very sensitive inspections and the inspection recipes must be stable against inevitable process variation and potentially high defect density going along with new manufacturing methods for nonplanar transistors (FINFETs).
Abstract: This article presents strategies to overcome the defect inspection challenges expected at the 14 nm technology node: Smaller feature and defect sizes will require very sensitive inspections. At the same time the inspection recipes must be stable against inevitable process variation and potentially high defect density going along with new manufacturing methods for nonplanar transistors (FINFETs). The focus is on existing inspection methods and tools such as brightfield and darkfield optical inspection, e-beam inspection and scanning electron microscopy imaging. Examples from 20 nm technology are shown that can be applied to the next node, including: - Choice of the right type of inspection, based on defect type, - complementary inspections at the same step, each being optimized for certain defect types, - smart use of inspection tool features to extend the usefulness of optical inspection, - use of alternative inspections such as e-beam or advanced process inspection, based on technology maturity, - detection of small systematic defects and random defects, - understanding and overcoming the limitations of inspected area vs. sensitivity and throughput, - monitoring inspection recipe performance.

8 citations

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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202110
202016
201924
201819
201727
201632