Topic
Mask inspection
About: Mask inspection is a research topic. Over the lifetime, 1072 publications have been published within this topic receiving 8696 citations.
Papers published on a yearly basis
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Patent•
08 May 1969TL;DR: In this paper, an improved version of the photo-masking framework is proposed, which includes photo-tecting the bottom and top layers of a multilayer OPAQUE PLATTER.
Abstract: A PHOTOMASK HAS MULTILAYER OPAQUE PLATTERNS ON A TRANSPARENT SUBSTRATE. EACH PATTERN INCLUDES A BOTTOM LAYER AND A TOP LAYER, EACH OF A MATERIAL CAPABLE OF BEING ETCHED BY A SUBSTANCE WHICH WILL NOT ETCH THE SUBSTRATE, AND AN INTERMEDIATE LAYER OF A MATERIAL CAPABLE OF BEING ETCHED BY A SUBSTANCE WHICH WILL NOT ETCH THE BOTTOM AND TOP LAYERS. THE SEVERAL LAYERS COMPENSATE FOR DEFECTS IN EACH LAYER. AN IMPROVED PHOTOMASK FABRICATION METHOD INCLUDES FORMING THE ABOVEMENTIONED PATTERNS BY SUCCESSIVELY DEPOSITING THE BOTTOM AND INTERMEDIATE LAYERS, PHOTOETCHING THE INTERMEDIATE LAYER INTO A DESIRED PATTERN, DEPOSITING THE TOP LAYER, AND THEN PHOTOETCHING THE TOP AND BOTTOM LAYERS INTO A DESIRED PATTERN.
6 citations
Patent•
11 Apr 2019TL;DR: In this paper, the authors proposed a method and an appliance for predicting the imaging result obtained with a mask when a lithography process is carried out, wherein the mask comprises mask structures to be imaged and the mask is destined to be illuminated in a lithographic process in a projection exposure apparatus with a predetermined illumination setting.
Abstract: The invention relates to a method and an appliance for predicting the imaging result obtained with a mask when a lithography process is carried out, wherein the mask comprises mask structures to be imaged and the mask is destined to be illuminated in a lithography process in a projection exposure apparatus with a predetermined illumination setting for exposing a wafer comprising a photoresist. In accordance with one aspect of the invention, a method according to the invention comprises the following steps: measuring at least one intensity distribution obtained for the mask in the case of an illumination with illumination light in accordance with the illumination setting in a mask inspection apparatus using a sensor arrangement, ascertaining an electric field resulting from the interaction of the illumination light with the mask structures, both in respect of amplitude and in respect of phase, by way of this intensity measurement, and estimating an intensity distribution obtained in the photoresist when the lithography process is carried out on the basis of a mathematical simulation (forward calculation), in which the electric field ascertained is propagated in a layer system comprising at least the photoresist.
6 citations
01 Jan 1978
TL;DR: In this paper, the authors propose a method to solve the problem of "uniformity" and "uncertainty" in the context of health care, and propose a solution.
Abstract: 1
6 citations
Patent•
12 Jan 2007TL;DR: In this paper, a mask pattern portion for exposing a predetermined pattern by an exposure beam is inspected by disposing a plurality of dummy inspection patterns having the same pattern as at least a part of the mask pattern.
Abstract: An exposure pattern or mask inspection and manufacture method and an exposure pattern or mask are provided which can perform comparison inspection of the exposure pattern or mask with ease and at a high precision. A mask pattern portion for exposing a predetermined pattern by an exposure beam is inspected by disposing a plurality of dummy inspection patterns having the same pattern as at least a part of the mask pattern portion, inside and/or outside an area of the mask pattern portion and comparing at least the portion of the mask pattern portion with the dummy inspection pattern portion or portions.
6 citations