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Mask inspection

About: Mask inspection is a research topic. Over the lifetime, 1072 publications have been published within this topic receiving 8696 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, a comparison of measurements made in four different mask inspection tools: one commercial tool using 488nm wavelength illumination, one prototype tool that uses 266nm illumination, and two noncommercial EUV “actinic” inspection tools.
Abstract: The production of defect-free mask blanks remains a key challenge for extreme ultraviolet (EUV) lithography. Integral to this effort is the development and characterization of mask inspection tools that are sensitive enough to detect critical defects with high confidence. Using a single programed-defect mask with a range of buried bump-type defects, the authors report a comparison of measurements made in four different mask inspection tools: one commercial tool using 488nm wavelength illumination, one prototype tool that uses 266nm illumination, and two noncommercial EUV “actinic” inspection tools. The EUV tools include a dark field imaging microscope and a scanning microscope. Their measurements show improving sensitivity with the shorter wavelength non-EUV tool, down to 33nm spherical-equivalent-volume diameter, for defects of this type. Measurements conditions were unique to each tool, with the EUV tools operating at a much slower inspection rate. Several defects observed with EUV inspection were below...

44 citations

Patent
12 Jun 2007
TL;DR: In this article, an automated system for analyzing mask defects in a semiconductor manufacturing process is presented, which combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred.
Abstract: An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.

44 citations

Patent
22 Feb 2002
TL;DR: In this article, a device for inspecting semiconductor devices, which inspects intricate circuit patterns using images formed by the irradiation of white light, a laser light or an electron beam, is equipped with a function that enables automatic setting of a plurality of parameters in the inspection device by using semiconductor device design data.
Abstract: In the present invention, a device for inspecting semiconductor devices, which inspects intricate circuit patterns using images formed by the irradiation of white light, a laser light, or an electron beam, is equipped with a function that enables automatic setting of a plurality of parameters in the inspection device by using semiconductor device design data. This helps to improve the operation efficiency of inspection when the conditions required for inspection are set.

44 citations

Patent
Norman Nathan Axelrod1
10 Dec 1969
TL;DR: In this article, an optical spatial filtering technique for detecting hole-type defects and excess spot defects in photomasks used in making microcircuits is described, where an approximate form factor intensity filter provides suppression of the regularly shaped mask features.
Abstract: This disclosure describes an optical spatial filtering technique for detecting hole-type defects and excess spot defects in photomasks used in making microcircuits. An approximate form factor intensity filter provides suppression of the regularly shaped mask features. For masks with features whose boundaries are along only the X-Y direction, this filter advantageously is a cross placed in the transform plane. With rectangular features suppressed, only nonrectangular defect data passes. Spots as small as 0.1 mil are detected and displayed on a TV monitor; or, using a photomultiplier tube, signals are stored on an oscilloscope or by a recorder for analysis, or counted with a pulse counter. Masks or circuits on opaque substrates are also inspected by this method.

43 citations

Journal ArticleDOI
TL;DR: In this paper, the authors determine the optical requirements of high-speed inspection at low voltage and show how this leads to a novel optical system design, which is capable of producing current densities of 1000 A/cm2 at 800 eV into spots as small as 50 nm.
Abstract: Low‐voltage scanning electron microscopes enjoy many advantages over light microscopes for both dimensional measurements and the analysis of small features. Their combination of high‐resolution and large depth‐of‐focus has made them a standard instrument in the semiconductor industry. However, until now, they have been many orders of magnitude too slow to be used for automated wafer inspection. In this article, the authors will determine the optical requirements of high‐speed inspection at low voltage and show how this leads to a novel optical system design. This optical system shares similarities with a 20 keV column designed for an x‐ray mask inspection system [W. D. Meisburger, A. Desai, and A. D. Brodie, J. Vac. Sci. Technol. B 9, 3010 (1991)]. However, the objective lens and electron detection system are unique. The objective lens combines superimposed electric and magnetic fields to decelerate the primary beam from 20 keV to ∼800 eV, and to effectively collimate and reaccelerate the resulting secondary electrons. Auxiliary electrodes are used to control the electric field on the semiconductor’s surface. A Wien filter is used to separate the secondary electrons from the primary beam. A second Wien filter is used to cancel the transverse chromatic aberration of the first filter. This optical system is capable of producing current densities of 1000 A/cm2 at 800 eV into spots as small as 50 nm. Images are acquired at a rate of 100 million pixels/second. Both theoretical and experimental performance results for this system will be presented.

43 citations

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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202110
202016
201924
201819
201727
201632