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Mean free path

About: Mean free path is a research topic. Over the lifetime, 4412 publications have been published within this topic receiving 114418 citations.


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01 Jan 2013
TL;DR: In this paper, a simple experiment demonstrating that room-temperature thermal transport in Si significantly deviates from the diffusion model already at micron distances is presented, indicating a transition from the diffusive to the ballistic transport regime for the low-frequency part of the phonon spectrum.
Abstract: The "textbook" phonon mean free path of heat carrying phonons in silicon at room temperature is ∼40 nm. However, a large contribution to the thermal conductivity comes from low-frequency phonons with much longer mean free paths. We present a simple experiment demonstrating that room-temperature thermal transport in Si significantly deviates from the diffusion model already at micron distances. Absorption of crossed laser pulses in a freestanding silicon membrane sets up a sinusoidal temperature profile that is monitored via diffraction of a probe laser beam. By changing the period of the thermal grating we vary the heat transport distance within the range ∼1-10 μm. At small distances, we observe a reduction in the effective thermal conductivity indicating a transition from the diffusive to the ballistic transport regime for the low-frequency part of the phonon spectrum.

285 citations

Journal ArticleDOI
TL;DR: In this article, an experimental study of the width dependence of the resistivity of narrow thin-film polycrystalline gold wires (nanowires) was carried out and the expected behavior on the basis of both surface and grain-boundary scattering mechanisms independently.
Abstract: Grain-boundary and surface scattering are known to increase the electrical resistivity of thin metallic films and wires. The length scale at which these produce appreciable effects is of the order of the electronic mean free path. For the well-studied case of thin films, both mechanisms can, in principle, be used to explain the observed thickness dependence on resistivity. In order to evaluate which of these mechanisms is more relevant, we have carried out an experimental study of the width dependence of the resistivity of narrow thin-film polycrystalline gold wires (nanowires), and computed the expected behavior on the basis of both surface and grain-boundary scattering mechanisms independently. We find that the resistivity increases as wire width decreases in a manner which is dependent on the mean grain size and cannot be explained adequately by either model alone. We propose a modification to the well-known model of Mayadas and Shatzkes, incorporating the variation of mean grain size on wire dimensions.

282 citations

Journal ArticleDOI
TL;DR: In this paper, the authors performed a Monte Carlo simulation of high-field transport in GaAs including a realistic band structure to study the band-structure dependence of electron transport and impact ionization.
Abstract: We have performed a Monte Carlo simulation of high-field transport in GaAs including a realistic band structure to study the band-structure dependence of electron transport and impact ionization. The band structure has been calculated using the empirical pseudopotential method. Unlike previous theories of impact ionization, our method is capable of calculating various parameters, such as mean free path, from first principles. The calculated electron mean free path, drift velocity, and impact ionization rate are in reasonable agreement with the experimental data in spite of several simplifications of the model. Within statistical uncertainty we do not observe any orientation dependence of the ionization rate in contradiction to the interpretation of recently reported experimental results. We also find that the contribution of ballistic electrons to impact ionization is negligibly small. Based on the results of the calculation, a general discussion of impact ionization is given.

280 citations

Journal ArticleDOI
TL;DR: In this paper, simple approximate methods have been developed for evaluating the electrical conductivity of films and wires of a size comparable with the mean free path of the conduction electrons of a thin wire.
Abstract: In the first part of this paper, simple approximate methods have been developed for evaluating the electrical conductivity of films and wires of a size comparable with the mean free path of the conduction electrons. In the second part, a rigorous theory has been given of the electrical conductivity of a thin wire, on the assumptions that the Fermi velocity surface is spherical and that the collisions of the electrons at the surface of the wire are inelastic. In the third part of the paper, this theory has been generalized to cover the case where the scattering is no longer inelastic. In the final part, Andrew’s recent experimental results for a thin mercury wire have been fitted to the theoretical curves obtained, and the mean free path evaluated.

280 citations

Journal ArticleDOI
TL;DR: The effective Boltzmann equation is valid even at very high temperature where the thermal lifetime and mean free path are short compared to the Compton wavelength of the fundamental particles.
Abstract: Hydrodynamic transport coefficients may be evaluated from first principals in a weakly coupled scalar field theory at an arbitrary temperature. In a theory with cubic and quartic interactions, the infinite class of diagrams which contributes to the leading weak coupling behavior is identified and summed. The resulting expression may be reduced to a single linear integral equation, which is shown to be identical to the corresponding result obtained from a linearized Boltzmann equation describing effective thermal excitations with temperature-dependent masses and scattering amplitudes. The effective Boltzmann equation is valid even at very high temperature where the thermal lifetime and mean free path are short compared to the Compton wavelength of the fundamental particles. Numerical results for the shear and the bulk viscosities are presented.

279 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202375
2022207
2021134
2020114
2019113
201887