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Mean free path
About: Mean free path is a research topic. Over the lifetime, 4412 publications have been published within this topic receiving 114418 citations.
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IBM1
TL;DR: The superlattice as mentioned in this paper is a semiconductor device with two highly N-type end portions to which ohmic contacts are made, and a central portion which has a one dimensional spatial periodic variation, in its band-edge energy.
Abstract: The semiconductor device has two highly N-type end portions to which ohmic contacts are made, and a central portion which has a one dimensional spatial periodic variation, in its band-edge energy. This spatial periodic variation, or superlattice, is produced by doping or alloying to form a plurality of successive layers having alternating band-edge energies. The period of the spatial variation is less than the carrier mean free path, and is such as to form in momentum space a plurality of periodic minizones which are much smaller than the Brillouin zones. The device exhibits a bulk negative resistance and is used in oscillator and bistable circuits.
51 citations
TL;DR: It is newly found that, for all solid loads, depolarization sets in for path lengths longer than approximately five transport mean free paths.
Abstract: We report on depolarization measurements of femtosecond pulses retroreflected from dense suspensions of silica microspheres with solid loads increasing from 5% to 54%. Backscattered pulse shapes compare well with predictions of the diffusion theory for all volume fractions, and the inferred values of the transport mean free path agree with independent measurements of enhanced backscattering. The measured degree of polarization decays exponentially with temporal rates that scale with the solid load. It is newly found that, for all solid loads, depolarization sets in for path lengths longer than approximately five transport mean free paths.
51 citations
TL;DR: In this paper, a simple expression is presented which can be used to estimate the mean free paths of electrons in solid organic insulators as a function of the electon energy, and the range of validity is 100 eV to 10 keV.
Abstract: A simple expression is presented which can be used to estimate the mean free paths of electrons in solid organic insulators as a function of the electon energy. Input parameters are the molecular weight and the density of the organic sample. The range of validity is 100 eV to 10 keV. It is demonstrated that, for this class of materials, the electron mean free path is, to a good approximation, inversely proportional to the valence electron density for a given electron energy.
51 citations
TL;DR: In this paper, the same single crystal of Yba2Cu3O6.8 was analyzed using a two-carrier model adapted to the particular nature of the crystal and in which the in-plane transport is exclusively insured by holes.
51 citations
TL;DR: In this paper, a model of the ionization layer which separates a thermal plasma close to full ionization from the space-charge sheath adjacent to the surface of an electrode or of an insulating wall is developed.
Abstract: A model is developed of the ionization layer which separates a thermal plasma close to full ionization from the space-charge sheath adjacent to the surface of an electrode or of an insulating wall. The multifluid description of the plasma is used. Asymptotic solutions are obtained for the cases in which the thickness of the ionization layer is much larger or much smaller than the mean free path for ion-atom collisions. The solution obtained for the latter case describes an interesting new regime which is in some aspects similar to the conventional diffusion regime, though essentially different from the diffusion regime in other aspects. Formulas are derived for the ion flux coming from the ionization layer to the edge of the space-charge sheath. Application of results to atmospheric-pressure argon and mercury plasmas is considered. @S1063-651X~98!08702-9#
51 citations