Topic
Mean free path
About: Mean free path is a research topic. Over the lifetime, 4412 publications have been published within this topic receiving 114418 citations.
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TL;DR: In situ electrical resistivity measurements in palladium films over the thickness range 25 A to 370 A were reported in this paper, where the Fuchs curve agreed with experimental p versus t curve for specularity parameter p = 06.
34 citations
TL;DR: In this paper, the electron mean free path (escape depth) in typical experiments is comparable to or less than the diameter of the molecular unit, which accounts for the weakness of the Fermi cut-off found in all photoemission studies.
34 citations
TL;DR: In this paper, the mass attenuation coefficient (MAC) of the samples were experimentally determined to evaluate their radiation shielding ability and the experimental coefficient was evaluated using NaI detector for gamma energies between 59.53 and 1408.01
34 citations
TL;DR: In this article, a nonlinear Liouville equation is derived to characterize the change in crack distribution resulting from crack growth and coalescence, and the problem is solved numerically to determine the limiting value of the mean free parth as a function of β.
34 citations
TL;DR: The experimental method proposed in this contribution offers a means to calibrate λ for any type of material or phase that can be milled using a focused ion beam system, thus expanding the thickness range over which electron energy loss spectroscopy can be used to determine the absolute sample thickness.
Abstract: Transmission electron microscopy specimens in the form of elongated, conical needles were made using a dual-beam focused ion beam system, allowing the specimen thickness to be geometrically determined for a range of thickness values. From the same samples electron energy loss maps were acquired and the plasmon mean free path (lambda) for inelastic scattering was determined experimentally from the measured values of specimen thickness. To test the method lambda was determined for Ni (174 +/- 17 nm), alpha-Al(2)O(3) (143 +/- 14 nm), Si (199 +/- 20 nm) and amorphous SiO(2) (238 +/- 12 nm), and compared both to experimental values of lambda taken from the literature and to calculated values. The calculated values of lambda significantly underestimate the true sample thickness for high accelerating voltages (300 kV) and large collection angles. A linear dependence of lambda on thickness was confirmed for t/lambda 0.6). The experimental method proposed in this contribution offers a means to calibrate lambda for any type of material or phase that can be milled using a focused ion beam system.
34 citations