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Mean free path

About: Mean free path is a research topic. Over the lifetime, 4412 publications have been published within this topic receiving 114418 citations.


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TL;DR: A theoretical description of the inelastic interactions of electrons with solid polystyrene is presented in this article, where the response of the valence electrons to energy and momentum transfers is determined by a model insulator theory; carbon K-shell ionization cross sections are derived from atomic, generalized oscillator strengths.
Abstract: A theoretical description of the inelastic interactions of electrons with solid polystyrene is presented. The response of the valence electrons to energy and momentum transfers is determined by a model insulator theory; carbon K-shell ionization cross sections are derived from atomic, generalized oscillator strengths. Contributions to the inverse mean free path and stopping power due to these two excitation processes are derived and tabulated for incident electrons with energies from 10 eV to 10 keV. Electron ranges in the continuous-slowing-down approximation are calculated and tabulated for electrons with energies from 15 eV to 10 keV.

77 citations

Journal ArticleDOI
TL;DR: In this article, the energy dissipation in slow collective nuclear motion is considered as a combined effect of the diabatic production of particle-hole excitations and the subsequent equilibration by two-body collisions.

77 citations

Journal ArticleDOI
TL;DR: In this article, the thermal conductivity of silicon thin films is predicted in the directions parallel and perpendicular to the film surfaces using equilibrium molecular dynamics, the Green-Kubo relation, and the Stillinger-Weber interatomic potential.
Abstract: The thermal conductivity of silicon thin films is predicted in the directions parallel and perpendicular to the film surfaces (in-plane and out-of-plane, respectively) using equilibrium molecular dynamics, the Green-Kubo relation, and the Stillinger-Weber interatomic potential. Three different boundary conditions are considered along the film surfaces: frozen atoms, surface potential, and free boundaries. Film thicknesses range from 2 to 217 nm and temperatures from 300 to 1000 K. The relation between the bulk pho.-non mean free path (A) and the film thickness (d s ) spans from the ballistic regime (A ≥ d s ) at 300 K to the diffusive, bulk-like regime (Λ «d s ) at 1000 K. When the film is thin enough, the in-plane and out-of-plane thermal conductivity differ from each other and decrease with decreasing film thickness, as a consequence of the scattering of phonons with the film boundaries. The in-plane thermal conductivity follows the trend observed experimentally at 300 K. In the ballistic limit, in accordance with the kinetic and phonon radiative transfer theories, the predicted out-of-plane thermal conductivity varies linearly with the film thickness, and is temperature-independent for temperatures near or above the Debye's temperature.

77 citations

Journal ArticleDOI
TL;DR: In this paper, the electrical resistivity, thermal conductivity, and the thermoelectric power were measured on the anomalous CeCu2Si2 compound and on the reference compound, and it was shown that resistivity and temperature dependences were in accord with those found in otherd band metals.
Abstract: We report measurements of the electrical resistivityρ, the thermal conductivityk and the thermoelectric powerS between 1.5K and 300K on the anomalous CeCu2Si2 compound and on LaCu2Si2 as reference compound. For LaCu2Si2 the temperature dependences ofρ andS are in accord with those found in otherd band metals. For CeCu2Si2 the observed resistivity (ρ≃220 µΩ cm at 200K) leads to a very short electronic mean free path which is of the order of the Ce-Ce spacing. Correspondingly,k is almost identical with the phonon contributionk p . Below 20K, resistivity and thermoelectric power strongly suggest Fermi liquid behavior with a “degeneracy temperature” between 20K and 40K. Above 200K, bothρ andS decrease proportionally to −ln(T/1 K).

77 citations

Journal ArticleDOI
TL;DR: In this article, the mean free path of polar crystals is calculated and compared with material obtained from semi-conductors and from substances which show photoconductivity, and the results obtained will be compared with experimental materials obtained from semidefinite materials.
Abstract: Polar crystals of stoichiometric composition at low temperatures are insulators of electricity. If, however, electrons are raised into the normally empty conduction band of energy levels, either through the absorption of light or the thermal energy of surrounding atoms, the crystal can conduct. The purpose of this note is to calculate the mean free path of such electrons, and hence their mobility (velocity of drift in unit field). The results obtained will be compared with experimental material obtained from semi-conductors and from substances which show photoconductivity.

77 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202375
2022207
2021134
2020114
2019113
201887