Topic
Memistor
About: Memistor is a research topic. Over the lifetime, 608 publications have been published within this topic receiving 34905 citations.
Papers
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01 Nov 2016
TL;DR: A test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states and results show that 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.
Abstract: Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if our test method is used to identify the boundary currents, 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.
2 citations
01 Dec 2015
TL;DR: The proposed scheme of three transistors two memristors based memory cell is power efficient, and it shows good compatibility with the sub-micron MOSFETs models for both write and read processes.
Abstract: This paper introduces a scheme of three transistors two memristors based memory cell. The write process connects the two memristors in series and the read process connects them in parallel. It utilizes the slowness property of the OFF memristive switching. The scheme uses the differential method of a sense amplifier. The write and read circuit schematics are shown. Simulation results are provided in terms of power and time delay under the use of 45 nm MOSFETs technology and the exponential memristor model. The proposed scheme is power efficient, and it shows good compatibility with the sub-micron MOSFETs models for both write and read processes.
2 citations
TL;DR: To prove the floating function of the proposed memristor emulator, a Wheatstone bridge is built by connecting 4 Memristor emulators in series and parallel and suggest that it is possible to weight calculation of the neural network synapse.
Abstract: A floating type of memristor emulator which acts like the behavior of memristor has been developed. Most of existing memristor emulators are grounded type which is built disregarding the connectivity with other memristor or other devices. The developed memristor emulator is a floating type whose output does not need to be grounded. Therefore, the emulator is able to be connected with other devices and be utilized for the interoperability test with various other circuits. To prove the floating function of the proposed memristor emulator, a Wheatstone bridge is built by connecting 4 memristor emulators in series and parallel. Also this bridge circuit suggest that it is possible to weight calculation of the neural network synapse.
2 citations
Patent•
30 Apr 2015TL;DR: In this paper, a memory cell includes an input coupled to read line, an output coupled to a circuit ground, a bi-polar memristor, and at least one address switch coupled to an address line to select the memory cell.
Abstract: A memory cell includes an input coupled to a read line, an output coupled to a circuit ground, a bi-polar memristor, and at least one address switch coupled to an address line to select the memory cell. A memory includes the bi-polar memristor and a one-way current conducting device, wherein the one-way current conducting device is positioned between the memristor cell output and the circuit ground, or between the read line and the memristor cell input.
2 citations
01 Jan 2018
TL;DR: A fully symbolic model of the memristor is introduced that is used for the symbolic analysis of the amplifier configurations and a transmemristance amplifier is used as a case study of design when the nullor is substituted by a memistor.
Abstract: The memristor as an actual device was introduced in April 2008 at the HP labs, while its original foundations are dated from 1971 when Prof. L. O. Chua devised the memristor as the fourth basic circuit element. Nowadays, the memristor has captured most of the attention not only from circuit theoreticians, but also from circuit designers because the widely open possibilities of the device in applications where it co-exists with traditional electronics. A particular case of such an application arises when the memristor is combined with the nullor in order to achieve a memristive input-output transfer function. In this chapter, we firstly introduce a fully symbolic model of the memristor that is used for the symbolic analysis of the amplifier configurations. It is important to point out the symbolic nature of our memristor model in contrast with other models that are of numerical nature or implemented in a macro-equivalent. Secondly, the four single-loop negative-feedback nullor-based amplifier configurations are introduced, and their corresponding analytic transfer functions are generated and characterised. Similarly, the noise and harmonic distortion analyses are carried out on the four configurations yielding fully symbolic expressions for both, the output equivalent noise and the harmonic components. In a next step, the nullor is synthesised by using a memistor, which is a combination of two memristors connected back-to-back. Finally, a transmemristance amplifier is used as a case study of design when the nullor is substituted by a memistor. Along the manuscript, the resulting expressions from the mathematical analyses are verified with HSPICE simulations that incorporate the memristor model from a description in the VERILOG-A language.
2 citations