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Memistor

About: Memistor is a research topic. Over the lifetime, 608 publications have been published within this topic receiving 34905 citations.


Papers
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01 Jan 2016
TL;DR: This paper briefly discusses a new architecture, Computation-In-Memory (CIM Architecture), which performs “processing-in-memory”, based on the integration of storage and computation in the same physical location and the use of non-volatile resistive-switching technology instead of CMOS technology.
Abstract: This paper briefly discusses a new architecture, Computation-In-Memory (CIM Architecture), which performs “processing-in-memory”. It is based on the integration of storage and computation in the same physical location (crossbar topology) and the use of non-volatile resistive-switching technology (memristive devices or memristors in short) instead of CMOS technology. The architecture has the potential of improving the energy-delay product, computing efficiency and performance area by at least two orders of magnitude.

1 citations

Proceedings ArticleDOI
01 Apr 2017
TL;DR: It is possible to exploit the delayed switching property of memristor to realize long delays without the need of big capacitors in the implementation of envelope generators.
Abstract: The Memristor is considered as the fourth fundamental element besides the resistor, the capacitor and the inductor. When Leon Chua first introduced this element, it was just a theoretical idea. Today, after 30 years from Chua's first paper about it, it is possible to buy memristor devices. In this paper, we investigate a way to exploit memristors in a typical audio application: the implementation of envelope generators. It is possible to exploit the delayed switching property of memristors to realize long delays without the need of big capacitors. We present the implementation of a ramp generator by means of a memristor-based circuit. The ramp signal can be used as control signal in an audio device.

1 citations

Book ChapterDOI
01 Jan 2018
TL;DR: In this article, a physics-based mathematical model for anionic memristor devices is presented to simulate and predict the effect of oxide thickness, material type, and operating temperatures on the electrical characteristics of the device.
Abstract: This chapter presents a physics-based mathematical model for anionic memristor devices. The model utilizes Poisson Boltzmann equation to account for temperature effect on device potential at equilibrium and comprehends material effect on device behaviors. A detailed MATLAB-based algorithm is developed to clarify and simplify the simulation environment. Moreover, the provided model is used to simulate and predict the effect of oxide thickness, material type, and operating temperatures on the electrical characteristics of the device. The value of this contribution is to provide a framework intended to simulate anionic memristor devices using correlated mathematical models. In addition, the model can be used to explore device materials and predict its performance.

1 citations

Patent
17 Jul 2015
TL;DR: In this article, an active memristor with a state controller is described, where the state controller defines a current-voltage relationship for the active Memristor around which an input signal oscillates.
Abstract: In one example in accordance with the present disclosure a memristor device is described. The device includes an active memristor to be set to one of a plurality of states. The device also includes a state controller to program the state of the active memristor. The state defines a current-voltage relationship for the active memristor. The state controller also sets an operating point for the active memristor around which an input signal oscillates. The resistance of the active memristor defines an amplitude modulation of the input signal and the reactance of the active memristor defines a phase delay of the input signal.

1 citations

Proceedings ArticleDOI
14 Nov 2013
TL;DR: The simulations show that the switching noise of the circuits decreases with the number of memristors and the production yield of the circuit is no lower than the productionield of the digital switching memristor.
Abstract: In this paper, we propose circuits for emulating analog purpose memristors (APM) purely composed from digital switching memristors or digital purpose memristors (DPM). Our design is also robust against memristor defects therefore this can be applied even in low yield technology where defects occur at high probability. Our simulations show that the switching noise of the circuits decreases with the number of memristors and the production yield of the circuit is no lower than the production yield of the digital switching memristors.

1 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202328
202277
20212
20201
20191
201815