Topic
Memistor
About: Memistor is a research topic. Over the lifetime, 608 publications have been published within this topic receiving 34905 citations.
Papers
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TL;DR: The model proposed is generic and could be incorporated into variants of threshold-based memristor models in which apparent variations in the output hysteresis convey the switching threshold shift, and paves the way for novel approaches in the fields of neuromorphic engineering circuits design.
Abstract: Diverse models have been proposed over the past years to explain the exhibiting behavior of memristors, the fourth fundamental circuit element. The models varied in complexity ranging from a description of physical mechanisms to a more generalized mathematical modeling. Nonetheless, stochasticity, a widespread observed phenomenon, has been immensely overlooked from the modeling perspective. This inherent variability within the operation of the memristor is a vital feature for the integration of this nonlinear device into the stochastic electronics realm of study. In this paper, experimentally observed innate stochasticity is modeled in a circuit compatible format. The model proposed is generic and could be incorporated into variants of threshold-based memristor models in which apparent variations in the output hysteresis convey the switching threshold shift. Further application as a noise injection alternative paves the way for novel approaches in the fields of neuromorphic engineering circuits design. On the other hand, extra caution needs to be paid to variability intolerant digital designs based on nondeterministic memristor logic.
87 citations
TL;DR: This paper introduces for the first time, a closed-form solution for the memristor-based memory sneak paths without using any gating elements and requires fewer reading steps compared to previously reported techniques, and has a very small impact on the memory density.
Abstract: In this paper, we introduce for the first time, a closed-form solution for the memristor-based memory sneak paths without using any gating elements The introduced technique fully eliminates the effect of sneak paths by reading the stored data using multiple access points and evaluating a simple addition/subtraction on the different readings The new method requires fewer reading steps compared to previously reported techniques, and has a very small impact on the memory density To verify the underlying theory, the proposed system is simulated using Synopsys HSPICE showing the ability to achieve a 100% sneak-path error-free memory In addition, the effect of quantization bits on the system performance is studied
86 citations
TL;DR: A new circuit for practical emulation of the memristor and its applications in Memristor-based digital modulation is experimentally investigated.
Abstract: Since its inception many proposals and attempts have been reported on using the memristor in digital signal processing (DSP) circuits. Memristor-based DSP applications are mainly focusing on improving the performance of memories and in realizing synapses in neural networks. In most of the reported applications the verification of the proposed DSP circuits is made using mathematical-based memristor models. In this paper a new circuit for practical emulation of the memristor and its applications in memristor-based digital modulation is experimentally investigated.
86 citations
17 May 2015
TL;DR: The scaling limitations and challenges of bothDRAM and NAND are reviewed, and the future prospects with promising solutions are also addressed for high density DRAM and 3D NAND flash memory.
Abstract: Memory manufactures are facing the challenges of technology scaling beyond 1xnm node DRAM and NAND flash memory. Even though we are managing to overcome patterning issue, we are still fighting against cost reduction and electrical limitation. In this paper, the scaling limitations and challenges of both DRAM and NAND are reviewed, and the future prospects with promising solutions are also addressed for high density DRAM and 3D NAND flash memory.
85 citations
TL;DR: This work demonstrates a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate, which is the first demonstration of a functional 3DCMOL hybrid circuit.
Abstract: Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + “Molecular”) architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.
85 citations