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Memistor

About: Memistor is a research topic. Over the lifetime, 608 publications have been published within this topic receiving 34905 citations.


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Journal ArticleDOI
TL;DR: The memristor and STT-RAM power has been compared with the traditional six-transistor-SRAM-based memory power and potential application in wireless sensor nodes is explored.
Abstract: Conventional charge-based memory usage in low-power applications is facing major challenges. Some of these challenges are leakage current for static random access memory (SRAM) and dynamic random access memory (DRAM), additional refresh operation for DRAM, and high programming voltage for Flash. In this paper, two emerging resistive random access memory (ReRAM) technologies are investigated, memristor and spin-transfer torque (STT)-RAM, as potential universal memory candidates to replace traditional ones. Both of these nonvolatile memories support zero leakage and low-voltage operation during read access, which makes them ideal for devices with long sleep time. To date, high write energy for both memristor and STT-RAM is one of the major inhibitors for adopting the technologies. The primary contribution of this paper is centered on addressing the high write energy issue by trading off retention time with noise margin. In doing so, the memristor and STT-RAM power has been compared with the traditional six-transistor-SRAM-based memory power and potential application in wireless sensor nodes is explored. This paper uses 45-nm foundry process technology data for SRAM and physics-based mathematical models derived from real devices for memristor and STT-RAM. The simulations are conducted using MATLAB and the results show a potential power savings of 87% and 77% when using memristor and STT-RAM, respectively, at 1% duty cycle.

43 citations

Journal ArticleDOI
TL;DR: Given the generality of the proposed class, the topology of the emulators may be adjusted so as to induce a large variety of dynamical behaviors, which may be exploited to accomplish new signal processing tasks, which conventional circuits are unable to perform.
Abstract: Summary In this paper, we propose a whole class of memristor circuits. Each element from the class consists of the cascade connection between a static nonlinear two-port and a dynamic one-port. The class may be divided into two subclasses depending on the input variable (voltage or current). Within each of these subclasses, two further sets of memristor circuits may be distinguished according to which output voltage and current of the two-port represents one of the system states. The simplest memristor circuits make only use of purely passive elementary components from circuit theory, an absolute novelty in this field of research. Thus they are suitable circuit primers for the introduction of the topic of memristors to undergraduate students. A sample circuit is built using discrete devices and its memristive nature is validated experimentally. In case the one-port is purely passive, the proposed circuits feature volatile memristive behavior. Allowing active devices into the dynamic one-port, non-volatile dynamics may also emerge, as proved through concepts from the theory of nonlinear dynamics. Given the generality of the proposed class, the topology of the emulators may be adjusted so as to induce a large variety of dynamical behaviors, which may be exploited to accomplish new signal processing tasks, which conventional circuits are unable to perform. Copyright © 2015 John Wiley & Sons, Ltd.

42 citations

Journal ArticleDOI
TL;DR: Using the proposed MUXes instead of memristor-based NAND gates, the routing effects that are a major challenge for implementing combinational logic in hybrid circuits can be reduced.

41 citations

Journal ArticleDOI
TL;DR: In this paper, a model-based hardware emulation for floating memristors is presented, which utilizes memristor "resistance" as a state variable, and constructs a hardware emulator using a low-complexity modular structure.
Abstract: A compact circuit model and physical hardware emulation for floating memristors are presented. By utilizing memristor 'resistance' as a state variable, and constructing a hardware emulator using a low-complexity modular structure, the model-based emulation can replicate diverse behaviors of different device types. Our hardware emulator for a voltage-actuated, threshold sensitive, two-terminal, floating memristor demonstrates experimentally memristor dynamics. The emulator is capable of computing any arithmetic operations without any disturbance associated with composition of modular structures.

41 citations

Book ChapterDOI
01 Jul 2013
TL;DR: By using thememristor’s memory to both store a bit and perform an operation with a second input bit, simple Boolean logic gates have been built with a single memristor, which is faster than one relying on memristors state switching, low power and requires only one Memristor.
Abstract: By using the memristor’s memory to both store a bit and perform an operation with a second input bit, simple Boolean logic gates have been built with a single memristor. The operation makes use of the interaction of current spikes (occasionally called current transients) found in both memristors and other devices. The sequential time-based logic methodology allows two logical input bits to be used on a one-port by sending the bits separated in time. The resulting logic gate is faster than one relying on memristor’s state switching, low power and requires only one memristor. We experimentally demonstrate working OR and XOR gates made with a single flexible Titanium dioxide sol-gel memristor.

41 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202328
202277
20212
20201
20191
201815