Memistor

About: Memistor is a research topic. Over the lifetime, 608 publications have been published within this topic receiving 34905 citations.

Memristor-based XOR gate for full adder

Abstract: Memristor technology is regarded as a potential solution to the memory bottleneck in Von Neumann Architecture by putting storage and computation integrated in the same physical location. In this paper, we proposed a nonvolatile exclusive-OR (XOR) logic gate with 5 memristors, which can execute operation in a single step. Moreover, based on the XOR logic gate, a full adder was presented and simulated by SPICE. Compared to other logic gate and full adder, the proposed circuits have benefits of simpler architecture, higher speed and lower power consumption. This paper provides a memristor-based element as a solution to the future alternative Computation-In-Memory architecture.

The memristor as controller

Abstract: Recently a fourth circuit element, predicted four decades ago, has been discovered by HP researchers. This device, known as the memristor, is basically a resistance with memory that can be used as a tunable gain in control systems. In this paper the memristor experimental characteristic is modeled with a describing function and used to predict oscillations in closed loop systems with linear plants.

A new simple emulator circuit for current controlled memristor

Abstract: This paper introduces a new and simple emulator circuit for a current controlled Memristor. The proposed emulator circuit consists of only two second-generation current conveyors (CCII+) to achieve the hysteresis behavior of the Memristor in the I-V plane. The emulator circuit satisfies the well-known fingerprints of Memristors. This circuit is very simple and realistic comparable to the previously published circuits. Here, mathematical analyses and PSPICE simulations are provided to validate the presented circuit. Experimental results show very good match with the simulation results.

A memristor-based compressive sensing architecture

Abstract: Memristors are considered as one promising candidate for future memory and computing fabrics. However, the design of memristor-based circuits is under a critical challenge of inevitable variations due to non-ideal fabrication processes and the resulted performance uncertainties. This kind of randomness can be utilized in many other applications, such as compressive sensing based data acquisition, which is conducted by a random sensing matrix. Existing compressive sensing systems are usually implemented in digital CMOS circuits, which suffer the problems of high hardware complexity and limited sampling speed. In this paper, we exploit the inherent variations in memristor devices to generate random sensing matrices for compressive sensing and achieve low cost and high performance operations. Simulation results demonstrate the advantages of the proposed memristor-based compressive sensing architecture.

A novel non-destructive readout circuit for Memristor-based memory arrays

Abstract: As the technology evolved, new storage capabilities are required. Therefore, emerging non-volatile memories have a great attention nowadays. The newly found Memristor prospected as a candidate for the next-generation memory because of its properties (i.e., nano-scale and non-volatile). In this paper, a novel non-destructive readout circuit approach is proposed to read the stored data on Memristor based-memory or write on it without disturbing the stored data. The submitted circuit try to propose a solution for the destructive reading issue faced by memristors.