Memistor

About: Memistor is a research topic. Over the lifetime, 608 publications have been published within this topic receiving 34905 citations.

A simple memristor emulator

Abstract: Memristor is drawing more and more attraction since HP Laboratory has announced its invention. This letter reports our efforts on memristor application researches, which makes the further memristor exploring easier. In this letter, we proposed a new memristor emulator using several simple discrete components. The emulator can meet most of the behavior characteristics of a generic memristor. Based on the emulator, a chaotic attractor has been observed in a simplest chaotic circuit that uses only three elements. Both the emulator and the chaotic circuit's behaviors are demonstrated using SPICE and MATLAB simulation.

Programmed-state detection in memristor stacks

Abstract: A method for programmed-state detection in memristor stacks includes applying a first secondary switching voltage across a memristor stack to produce a first programmed-state-dependent secondary switching response in a memristor in the memristor stack. The programmed-state-dependent secondary switching response results in a detectable change in the electrical resistance of the memristor stack. The method also includes measuring a first electrical resistance of the memristor stack and inferring the programmed state of the memristor stack from the measured electrical resistance.

Improved dual sided doped memristor: modelling and applications

Abstract: Memristor as a novel and emerging electronic device having vast range of applications suffer from poor frequency response and saturation length. In this paper, the authors present a novel and an innovative device structure for the memristor with two active layers and its non-linear ionic drift model for an improved frequency response and saturation length. The authors investigated and compared the I-V characteristics for the proposed model with the conventional memristors and found better results in each case (different window functions) for the proposed dual sided doped memristor. For circuit level simulation, they developed a SPICE model of the proposed memristor and designed some logic gates based on hybrid complementary metal oxide semiconductor memristive logic (memristor ratioed logic). The pro- posed memristor yields improved results in terms of noise margin, delay time and dynamic hazards than that of the conventional memristors (single active layer memristors).

Multiple memristor read and write circuit for neuromorphic applications

Abstract: A memristor based write circuit is presented that can update multiple memristors using a neuron spike generated by the Izhikevich model. A memristor read circuit is also presented that is capable of quantizing the resistance into 5 discrete values that could be digitally decoded. Together, these circuits provide the basic block for a memristor based neuromorphic architecture. The memristors were modeled using published device characterization data.

Spintronic devices: From memory to memristor

Abstract: In 1971, Professor Leon Chua in UC Berkeley predicted the fourth fundamental passive circuit element - memristor, based on the conceptual completeness of circuit theory. 37 years later, a team at HP Labs led by Dr. Stanley Williams announced the development of the first switching memristor. From then, more and more researches on memristor are conducted at various levels. Spintronic technology was introduced to the nonvolatile memory design regime in the recent decade. For example, spin-transfer torque random access memory (STT-RAM) has demonstrated many promising characteristics such as non-volatility, zero standby power, nanosecond access time, high memory density, and good scalability. In this paper, we will give a short tutorial of our works in STT-RAM from the viewpoints of device, design and system applications. On the top of that, we will also discuss one type of memsitors based on spintronic technology (spintronic memristor), including the device modeling and the applications in sensor.