Memistor

About: Memistor is a research topic. Over the lifetime, 608 publications have been published within this topic receiving 34905 citations.

On the operational features and performance of a memristor-based cell for a LUT of an FPGA

Abstract: This paper presents the detailed analysis of a memristor-based cell for a Look-Up Table (LUT) of a FPGA. The basic operational properties of this memristor-based cell are considered in depth. It shows that different from previous schemes, the ringing phenomenon of the so-called normalized state parameter does not affect data integrity. An extensive simulation based analysis of the two basic memory operations (READ and WRITE) and the corrective operation (RESTORE) is provided to show its substantial advantages. Moreover, the impact of varying different features of the memristor (range and dimension) and the feature size of the NMOS is evaluated for the resistive assessment at cell-level to show substantial improvements in terms of energy dissipation and READ/WRITE times.

A memristor based binary multiplier

Abstract: Memristor is a two-terminal nanodevice that has recently attracted the attention of many researchers due to its simple structure, non-volatility behaviour, high-density integration, and low-power consumption. This paper presents and evaluates a novel binary multiplier composed of memristive devices and nanowire crossbar arrays. Using the proposed multiplier instead of usual digital circuits, the number of digital gates are a major challenge for implementing combinational logic in hybrid circuits can be reduced. The proposed memristor-based multiplier requires 20 memristor devices and it performs multiplication with 8 computational steps.

Memristive systems analysis of 3-terminal devices

Abstract: Memristive systems were proposed in 1976 by Leon Chua and Sung Mo Kang as a model for 2-terminal passive nonlinear dynamical systems which exhibit memory effects. Such systems were originally shown to be relevant to the modeling of action potentials in neurons in regards to the Hodgkin-Huxley model and, more recently, to the modeling of thin film materials such as TiO 2−x proposed for non-volatile resistive memory. However, over the past 50 years a variety of 3-terminal non-passive dynamical devices have also been shown to exhibit memory effects similar to that predicted by the memristive system model. This article extends the original memristive systems framework to incorporate 3-terminal, non-passive devices and explains the applicability of such dynamic systems models to 1) the Widrow-Hoff memistor, 2) floating gate memory cells, and 3) nano-ionic FETs.

Memristor based logic gate

Abstract: A logic gate comprises a first input (A) and a second input (B), and further comprises a first memristor (M 1 ), a second memristor (M 2 ), a third memristor (M 3 ), and a fourth memristor (M 4 ), each memristor having a positive terminal and a negative terminal. The logic gate also comprises a first output (12) and a second output (14). The memristors are connected in a bridge arrangement whereby: the negative terminal of the first memristor and the positive terminal of the second memristor are connected in common to the first input;the negative terminal of the third memristor and the positive terminal of the fourth memristor are connected in common to the second input; the negative terminal of the second memristor and the negative terminal of the fourth memristor are connected in common to the first output; and the positive terminal of the first memristor and the positive terminal of the third memristor are connected in common to the second output. In use, the voltage of at least one of the outputs, or the voltage difference between the first and second outputs, corresponds to the result of a logic operation relative to voltages applied to the first and second inputs.

Re-model fabricated memristor behavior in LT-SPICE and applied in logic circuit

Abstract: A fabricated memristor behavior has been remodel in LT-SPICE and presented in this paper. Memristor SPICE models are important for designers to exhibit memristor behavior since memristor is not yet available in market. Among important parameters in memristor SPICE model is R ON , R OFF and TiO 2 thickness. This is because different R ON and R OFF value results in different switching behavior. In this paper, R ON and R OFF are obtained from fabricated memristor graph gradient. The values are applied as memristor model parameters. The behavior of this model is in agreement with the measurements of fabricated memristor. Next, NAND and NOR circuits are designed using the SPICE model and circuits are working based on the simulation results. The memristor SPICE model parameters are based on fabricated memristor model and it has similar behavior with fabricated memristor model. Thus it is convincing that fabricated memristor will work in real circuit.