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Memistor

About: Memistor is a research topic. Over the lifetime, 608 publications have been published within this topic receiving 34905 citations.


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Proceedings ArticleDOI
23 Mar 2016
TL;DR: In this paper by the use of Hybrid Memristor model 4×1 and 8×1 Multiplexers has been designed and the results are compared with only Conventional CMOS design.
Abstract: All electronics industry, they are doing lots of works based on compactness and low power. Semiconductor devices are scale down from Micro meter to Nano meter, at the same time Nano devices are doing their best performance in electronic industry. One such Nano device is Memristor. It is a fourth passive element and compact in size (Nano meter range). In recent years Memristors are doing their better performance in Nano devices. In this paper by the use of Hybrid Memristor model 4×1 and 8×1 Multiplexers has been designed. Hybrid means combination of two models, which means we are combining the two models and analysing the performance. Here we are combining Memristor model and CMOS model. The results are compared with only Conventional CMOS design. The performance parameters, power consumption and delay is less in Hybrid Memristor model. HSPICE software is used for analysis the results.

4 citations

Proceedings ArticleDOI
24 May 2015
TL;DR: The basics of CNN computation are explained at first and the previous memristor-based CNN circuits that are very useful in performing analog multiplication are discussed, and the possible solutions are discussed.
Abstract: In this paper, the theory, circuit design, and possible applications of Cellular Nanoscale Networks (CNNs) which are based on memristor technology are reviewed. In the memristor-based CNNs, memristors can be used to realize the analog multiplication circuit that is essential in performing the computation functions of CNNs with low-power consumption and small area. Compared to the memristor-based crossbar architecture that can be used to mimic the fundamental neuron-cell-level operation such as Spike Time Dependent Plasticity (STDP), the memristor-based CNN circuit is more suitable in mimicking the advanced sensory systems such as image processing of human's retina. In this paper, we explain the basics of CNN computation at first and we discuss the previous memristor-based CNN circuits that are very useful in performing analog multiplication. And, also, we think of some practical issues of CNN circuits and discuss the possible solutions. For the CNN applications using memristors, we show the simulation results of CNN circuit with Laplacian template that can be used in the edge detection of various images.

4 citations

Proceedings ArticleDOI
01 Jun 2016
TL;DR: The memristor emulator, I & F neurons and an algorithm of pattern recognition simulated in Ltspice is explained, which has been fabricated in AMS 350nm process.
Abstract: This paper details an array of switch resistor based memristor emulators with integrate & fire based neuron ASIC for the development of memristor based pattern recognition. The designed ASIC has 4 memristor emulators with a conductance range from 195 nS to 190 uS; processing has been planned to be off-chip to get the freedom of programmability of any function in ASIC. The ASIC has 2 integrate and fire (I & F) neuron circuits which are planned to be used in conjunction with memristors in a large multiple chip network for pattern recognition. This paper explains the memristor emulator, I & F neurons and an algorithm of pattern recognition simulated in Ltspice. The ASIC has been fabricated in AMS 350nm process.

4 citations

01 Jan 2014
TL;DR: In this article, a novel threshold flux-controlled memristor model with a window function is proposed, in which the ionic drift direction is perpendicular to the direction of the applied voltage, and the fingerprints of the proposed model are analyzed.
Abstract: Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive device is assumed to exist whose ionic drift direction is perpendicular to the direction of the applied voltage, upon which, corresponding to the HP charge-controlled memristor model, a novel threshold flux-controlled memristor model with a window function is proposed. The fingerprints of the proposed model are analyzed. Especially, a practical equivalent circuit of the proposed model is realized, from which the corresponding experimental fingerprints are captured. The equivalent circuit of the threshold memristor model is appropriate for various memristors based breadboard experiments.

4 citations

01 Jan 2013
TL;DR: This paper proposes a new CAM cell that employs memristors (memory resistor) as the storage element and the main part of the comparator and explores the possibility to build memristor-based storage structures with lower power consumption to achieve the purpose of saving energy and decreasing the searching time.
Abstract: Content addressable memory (CAM) is one kind of the associative memory; it can be used in several high-speed searching applications. In this paper, we propose a new CAM cell that employs memristors (memory resistor) as the storage element and the main part of the comparator. This presented new CAM cell involves two memristors; one is for saving the data as a storage element and the other one is used as an important part of the comparator instead of the conventional logic gate. Based on the unique characters of the memristor, we explore the new Memristor-CAM cell design to analyze the possibility to build memristor-based storage structures with lower power consumption to achieve the purpose of saving energy and decreasing the searching time.

4 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202328
202277
20212
20201
20191
201815