Memistor

About: Memistor is a research topic. Over the lifetime, 608 publications have been published within this topic receiving 34905 citations.

A Mathematical analysis: from Memristor to Fracmemristor

Abstract: The memristor is also a basic electronic component, just like resistors, capacitors, and inductors. It is a nonlinear device with memory characteristics. In 2008, with HP’s announcement of the discovery of the TiO2 memristor, the new memristor system, memory capacitor(memcapacitor) and memory inductor(meminductor) were derived. Fractional-order calculus has the characteristics of non locality, weak singularity and long term memory which traditional integer-order calculus does not have, and can accurately portray or model real-world problems better than the classic integer-order calculus.In recent years, researchers have extended the modeling method of memristor by fractional calculus, and proposed the fractional-order memristor, but its concept is not unified. This paper reviews the existing memristive elements, including integer-order memristor systems and fractional-order memristor systems. We analyze their similarities and differences, give the derivation process, circuit schematic diagrams, and an outlook on the development direction of fractional-order memristive elements.

Behavior of Multiple Memristor Circuits

Abstract: Memristor is a new circuit element defined by a state-dependent Ohm’s law between the memristor voltage and current. It has recently been successfully built, however, its electrical characteristics are not fully known yet. Like other circuit elements R, L and C, there could have various configurations of multiple memristors including serial and parallel connections in a variety of applications. When input voltage/current is supplied to a circuit with multiple memristors, behavior of the device becomes complicated and is difficult to predict. In this chapter, composite characteristics of the serial and parallel connections of memristors are investigated using both linear and nonlinear models. Also, the behavior of individual memristor is formulated mathematically and a general computation method of composite memristance for multiple memristor circuits of diverse configurations is proposed.

Design and simulation of a quaternary memory cell based on a physical memristor

Abstract: Memristors were theorized more than fifty years ago, but only recently physical devices with memristor's behavior have been fabricated and shipped. In this work, we experiment on one of these physical memristors by designing a memristor-based memory cell, implementing the cell, and testing it. Our experiments demonstrate that the memristor technology is not yet mature for practical applications, but, nevertheless, when production will provide reliable and dependable devices, memristor-based memory systems may replace CMOS memories with some advantages.

Memristor Device Engineering and CMOS Integration for Reconfigurable Logic Applications

Abstract: This chapter reviews the application of memristive devices as reconfigurable switches. First, the fundamental performance metrics (power consumption, endurance, switch speed, IV nonlinearity, CMOS compatibility, ON/OFF ratio, etc.) of memristors as switches are discussed. Device engineering approaches including fabrication techniques, choice of materials, and geometry engineering are then reviewed. Finally, hybrid memristor/CMOS circuits that integrate CMOS with memristive devices as reconfigurable switches are presented.