Memory bank

About: Memory bank is a research topic. Over the lifetime, 5858 publications have been published within this topic receiving 84254 citations.

A network on chip architecture and design methodology

Abstract: We propose a packet switched platform for single chip systems which scales well to an arbitrary number of processor like resources. The platform, which we call Network-on-Chip (NOC), includes both the architecture and the design methodology. The NOC architecture is a m/spl times/n mesh of switches and resources are placed on the slots formed by the switches. We assume a direct layout of the 2-D mesh of switches and resources providing physical- and architectural-level design integration. Each switch is connected to one resource and four neighboring switches, and each resource is connected to one switch. A resource can be a processor core, memory, an FPGA, a custom hardware block or any other intellectual property (IP) block, which fits into the available slot and complies with the interface of the NOC. The NOC architecture essentially is the onchip communication infrastructure comprising the physical layer, the data link layer and the network layer of the OSI protocol stack. We define the concept of a region, which occupies an area of any number of resources and switches. This concept allows the NOC to accommodate large resources such as large memory banks, FPGA areas, or special purpose computation resources such as high performance multi-processors. The NOC design methodology consists of two phases. In the first phase a concrete architecture is derived from the general NOC template. The concrete architecture defines the number of switches and shape of the network, the kind and shape of regions and the number and kind of resources. The second phase maps the application onto the concrete architecture to form a concrete product.

Memory access scheduling

Abstract: The bandwidth and latency of a memory system are strongly dependent on the manner in which accesses interact with the “3-D” structure of banks, rows, and columns characteristic of contemporary DRAM chips. There is nearly an order of magnitude difference in bandwidth between successive references to different columns within a row and different rows within a bank. This paper introduces memory access scheduling, a technique that improves the performance of a memory system by reordering memory references to exploit locality within the 3-D memory structure. Conservative reordering, in which the first ready reference in a sequence is performed, improves bandwidth by 40% for traces from five media benchmarks. Aggressive reordering, in which operations are scheduled to optimize memory bandwidth, improves bandwidth by 93% for the same set of applications. Memory access scheduling is particularly important for media processors where it enables the processor to make the most efficient use of scarce memory bandwidth.

Multi-state EEPROM having write-verify control circuit

Abstract: An EEPROM having a memory cell array in which electrically programmable memory cells are arranged in a matrix and each of the memory cells has three storage states, includes a plurality of data circuits for temporarily storing data for controlling write operation states of the plurality of memory cells, a write circuit for performing a write operation in accordance with the contents of the data circuits respectively corresponding to the memory cells, a write verify circuit for confirming states of the memory cells set upon the write operation, and a data updating circuit for updating the contents of the data circuits such that a rewrite operation is performed to only a memory cell, in which data is not sufficiently written, on the basis of the contents of the data circuits and the states of the memory cells set upon the write operation. A write operation, a write verify operation, and a data circuit content updating operation based on the contents of the data circuits are repeatedly performed until the memory cells are set in predetermined written states.

Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices

Abstract: In one embodiment of the present invention, a memory storage system for storing information organized in sectors within a nonvolatile memory bank is disclosed. The memory bank is defined by sector storage locations spanning across one or more rows of a nonvolatile memory device, each the sector including a user data portion and an overhead portion. The sectors being organized into blocks with each sector identified by a host provided logical block address (LBA). Each block is identified by a modified LBA derived from the host-provided LBA and said virtual PBA, said host-provided LBA being received by the storage device from the host for identifying a sector of information to be accessed, the actual PBA developed by said storage device for identifying a free location within said memory bank wherein said accessed sector is to be stored. The storage system includes a memory controller coupled to the host; and a nonvolatile memory bank coupled to the memory controller via a memory bus, the memory bank being included in a non-volatile semiconductor memory unit, the memory bank has storage blocks each of which includes a first row-portion located in said memory unit, and a corresponding second row-portion located in each of the memory unit, each of the memory row-portions provides storage space for two of said sectors, wherein the speed of performing write operations is increased by writing sector information to the memory unit simultaneously.

Flash EEPROM System with Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks

Abstract: A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in separate blocks of the characteristics of a large number of blocks of cells in which user data is stored. These characteristics for user data blocks being accessed may, during operation of the memory system by its controller, be stored in a random access memory for ease of access and updating. According to another feature, multiple sectors of user data are stored at one time by alternately streaming chunks of data from the sectors to multiple memory blocks. Bytes of data in the stream may be shifted to avoid defective locations in the memory such as bad columns. Error correction codes may also be generated from the streaming data with a single generation circuit for the multiple sectors of data. The stream of data may further be transformed in order to tend to even out the wear among the blocks of memory. Yet another feature, for memory systems having multiple memory integrated circuit chips, provides a single system record that includes the capacity of each of the chips and assigned contiguous logical address ranges of user data blocks within the chips which the memory controller accesses when addressing a block, making it easier to manufacture a memory system with memory chips having different capacities. A typical form of the memory system is as a card that is removably connectable with a host system but may alternatively be implemented in a memory embedded in a host system. The memory cells may be operated with multiple states in order to store more than one bit of data per cell.