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Memory cell

About: Memory cell is a research topic. Over the lifetime, 23375 publications have been published within this topic receiving 284724 citations.

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Journal ArticleDOI
TL;DR: In this paper, the authors review the current status of one of the alternatives, resistance random access memory (ReRAM), which uses a resistive switching phenomenon found in transition metal oxides.

2,641 citations

Journal ArticleDOI
20 Apr 2010
TL;DR: The physics behind this large resistivity contrast between the amorphous and crystalline states in phase change materials is presented and how it is being exploited to create high density PCM is described.
Abstract: In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.

1,488 citations

Journal ArticleDOI
TL;DR: The feasibility of a new semiconductor memory concept that promises that integration into a logic complementary metal oxide semiconductor (CMOS) process flow might be possible with only a few additional lithographic steps is demonstrated.
Abstract: Non-volatile 'flash' memories are key components of integrated circuits because they retain their data when power is interrupted. Despite their great commercial success, the semiconductor industry is searching for alternative non-volatile memories with improved performance and better opportunities for scaling down the size of memory cells. Here we demonstrate the feasibility of a new semiconductor memory concept. The individual memory cell is based on a narrow line of phase-change material. By sending low-power current pulses through the line, the phase-change material can be programmed reversibly between two distinguishable resistive states on a timescale of nanoseconds. Reducing the dimensions of the phase-change line to the nanometre scale improves the performance in terms of speed and power consumption. These advantages are achieved by the use of a doped-SbTe phase-change material. The simplicity of the concept promises that integration into a logic complementary metal oxide semiconductor (CMOS) process flow might be possible with only a few additional lithographic steps.

1,207 citations

Journal ArticleDOI
19 Dec 2008-Immunity
TL;DR: This review highlights recent advances in how naive and memory T cell homeostasis is regulated.

1,102 citations

Journal ArticleDOI
13 Dec 2002-Cell
TL;DR: A time course of gene expression and functional changes in antigen-specific T cells during viral infection was evaluated and it was suggested that antigen- specific CD8 T cells progressively differentiate into memory cells following viral infection.

966 citations

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