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Memristor

About: Memristor is a research topic. Over the lifetime, 6014 publications have been published within this topic receiving 134936 citations.


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Journal ArticleDOI
08 Apr 2010-Nature
TL;DR: Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.
Abstract: The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.

1,642 citations

Journal ArticleDOI
01 Jan 2018
TL;DR: The state of the art in memristor-based electronics is evaluated and the future development of such devices in on-chip memory, biologically inspired computing and general-purpose in-memory computing is explored.
Abstract: A memristor is a resistive device with an inherent memory. The theoretical concept of a memristor was connected to physically measured devices in 2008 and since then there has been rapid progress in the development of such devices, leading to a series of recent demonstrations of memristor-based neuromorphic hardware systems. Here, we evaluate the state of the art in memristor-based electronics and explore where the future of the field lies. We highlight three areas of potential technological impact: on-chip memory and storage, biologically inspired computing and general-purpose in-memory computing. We analyse the challenges, and possible solutions, associated with scaling the systems up for practical applications, and consider the benefits of scaling the devices down in terms of geometry and also in terms of obtaining fundamental control of the atomic-level dynamics. Finally, we discuss the ways we believe biology will continue to provide guiding principles for device innovation and system optimization in the field. This Perspective evaluates the state of the art in memristor-based electronics and explores the future development of such devices in on-chip memory, biologically inspired computing and general-purpose in-memory computing.

1,231 citations

Journal ArticleDOI
TL;DR: The memristor is a 2-terminal nonvolatile memory device that exhibits a pinched hysteresis loop confined to the first and third quadrants of the v-i plane whose contour shape in general changes with both the amplitude and frequency of any periodic sine-wave-like input voltage source, or current source as mentioned in this paper.
Abstract: All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with both the amplitude and frequency of any periodic “sine-wave-like” input voltage source, or current source. In particular, the pinched hysteresis loop shrinks and tends to a straight line as frequency increases. Though numerous examples of voltage vs. current pinched hysteresis loops have been published in many unrelated fields, such as biology, chemistry, physics, etc., and observed from many unrelated phenomena, such as gas discharge arcs, mercury lamps, power conversion devices, earthquake conductance variations, etc., we restrict our examples in this tutorial to solid-state and/or nano devices where copious examples of published pinched hysteresis loops abound. In particular, we sampled arbitrarily, one example from each year between the years 2000 and 2010, to demonstrate that the memristor is a device that does not depend on any particular material, or physical mechanism. For example, we have shown that spin-transfer magnetic tunnel junctions are examples of memristors. We have also demonstrated that both bipolar and unipolar resistance switching devices are memristors.

1,208 citations

Journal ArticleDOI
TL;DR: This work describes an electrochemical neuromorphic organic device (ENODe) operating with a fundamentally different mechanism from existing memristors, opening a path towards extreme interconnectivity comparable to the human brain.
Abstract: A neuromorphic device based on the stable electrochemical fine-tuning of the conductivity of an organic ionic/electronic conductor is realized. These devices show high linearity, low noise and extremely low switching voltage. The brain is capable of massively parallel information processing while consuming only ∼1–100 fJ per synaptic event1,2. Inspired by the efficiency of the brain, CMOS-based neural architectures3 and memristors4,5 are being developed for pattern recognition and machine learning. However, the volatility, design complexity and high supply voltages for CMOS architectures, and the stochastic and energy-costly switching of memristors complicate the path to achieve the interconnectivity, information density, and energy efficiency of the brain using either approach. Here we describe an electrochemical neuromorphic organic device (ENODe) operating with a fundamentally different mechanism from existing memristors. ENODe switches at low voltage and energy ( 500 distinct, non-volatile conductance states within a ∼1 V range, and achieves high classification accuracy when implemented in neural network simulations. Plastic ENODes are also fabricated on flexible substrates enabling the integration of neuromorphic functionality in stretchable electronic systems6,7. Mechanical flexibility makes ENODes compatible with three-dimensional architectures, opening a path towards extreme interconnectivity comparable to the human brain.

1,119 citations

01 Jan 2019
TL;DR: The goal of this tutorial is to introduce some fundamental circuit-theoretic concepts and properties of the memristor that are relevant to the analysis and design of non-volatile nano memories where binary bits are stored as resistances manifested by the Memristor’s continuum of equilibrium states.
Abstract: All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with both the amplitude and frequency of any periodic “sine-wave-like” input voltage source, or current source. In particular, the pinched hysteresis loop shrinks and tends to a straight line as frequency increases. Though numerous examples of voltage vs. current pinched hysteresis loops have been published in many unrelated fields, such as biology, chemistry, physics, etc., and observed from many unrelated phenomena, such as gas discharge arcs, mercury lamps, power conversion devices, earthquake conductance variations, etc., we restrict our examples in this tutorial to solid-state and/or nano devices where copious examples of published pinched hysteresis loops abound. In particular, we sampled arbitrarily, one example from each year between the years 2000 and 2010, to demonstrate that the memristor is a device that does not depend on any particular material, or physical mechanism. For example, we have shown that spin-transfer magnetic tunnel junctions are examples of memristors. We have also demonstrated that both bipolar and unipolar resistance switching devices are memristors.

1,097 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20241
2023768
20221,599
2021713
2020694
2019765