Memristor

About: Memristor is a research topic. Over the lifetime, 6014 publications have been published within this topic receiving 134936 citations.

The elusive memristor: properties of basic electrical circuits

Abstract: We present an introduction to and a tutorial on the properties of the recently discovered ideal circuit element, a memristor. By definition, a memristor M relates the charge q and the magnetic flux in a circuit and complements a resistor R, a capacitor C and an inductor L as an ingredient of ideal electrical circuits. The properties of these three elements and their circuits are a part of the standard curricula. The existence of the memristor as the fourth ideal circuit element was predicted in 1971 based on symmetry arguments, but was clearly experimentally demonstrated just last year. We present the properties of a single memristor, memristors in series and parallel, as well as ideal memristor–capacitor (MC), memristor–inductor (ML) and memristor–capacitor–inductor (MCL) circuits. We find that the memristor has hysteretic current–voltage characteristics. We show that the ideal MC (ML) circuit undergoes non-exponential charge (current) decay with two time scales and that by switching the polarity of the capacitor, an ideal MCL circuit can be tuned from overdamped to underdamped. We present simple models which show that these unusual properties are closely related to the memristor's internal dynamics. This tutorial complements the pedagogy of ideal circuit elements (R, C and L) and the properties of their circuits, and is aimed at undergraduate physics and electrical engineering students.

Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors Nanoscale devices, that store information without need for a power source, can be used for non-volatile memory, and promise to allow simulation of learning, adaptation and spontaneous behavior.

Abstract: We extend the notion of memristive systems to capacitive and inductive elements, namely, capacitors and in- ductors whose properties depend on the state and history of the system. All these elements typically show pinched hyster- etic loops in the two constitutive variables that define them: current-voltage for the memristor, charge-voltage for the memcapacitor, and current-flux for the meminductor .W e argue that these devices are common at the nanoscale, where the dynamical properties of electrons and ions are likely to depend on the history of the system, at least within certain time scales. These elements and their combination in circuits open up new functionalities in electronics and are likely to find applications in neuromorphic devices to simulate learning, adaptive, and spontaneous behavior.

Switching dynamics in titanium dioxide memristive devices

Abstract: Memristive devices are promising components for nanoelectronics with applications in nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing. Bipolar resistive switches based on metal oxides such as TiO2 have been identified as memristive devices primarily based on the “pinched hysteresis loop” that is observed in their current-voltage (i-v) characteristics. Here we show that the mathematical definition of a memristive device provides the framework for understanding the physical processes involved in bipolar switching and also yields formulas that can be used to compute and predict important electrical and dynamical properties of the device. We applied an electrical characterization and state-evolution procedure in order to capture the switching dynamics of a device and correlate the response with models for the drift diffusion of ionized dopants (vacancies) in the oxide film. The analysis revealed a notable property of nonlinear memristors: the energy required to switch a me...

TEAM: ThrEshold Adaptive Memristor Model

Abstract: Memristive devices are novel devices, which can be used in applications ranging from memory and logic to neuromorphic systems. A memristive device offers several advantages: nonvolatility, good scalability, effectively no leakage current, and compatibility with CMOS technology, both electrically and in terms of manufacturing. Several models for memristive devices have been developed and are discussed in this paper. Digital applications such as memory and logic require a model that is highly nonlinear, simple for calculations, and sufficiently accurate. In this paper, a new memristive device model is presented-TEAM, ThrEshold Adaptive Memristor model. This model is flexible and can be fit to any practical memristive device. Previously published models are compared in this paper to the proposed TEAM model. It is shown that the proposed model is reasonably accurate and computationally efficient, and is more appropriate for circuit simulation than previously published models.

How We Found The Missing Memristor

Abstract: This article discusses the development of a memristor and how it works. A memristor is a contraction of a memory resistor and is a two-terminal device whose resistance depends on the voltage applied to it and the length of time that voltage has been applied. This device remembers its history, that is, when you turn off the voltage, the memristor remembers its most recent resistance until the next time you turn it on.