Mercury cadmium telluride

About: Mercury cadmium telluride is a research topic. Over the lifetime, 1380 publications have been published within this topic receiving 12831 citations.

Properties of Narrow-Gap Cadmium-Based Compounds

Abstract: Part 1 Mercury cadmium telluride: growth mechanical and thermal properties dielectric and optical properties diffusion defects band structure and carrier properties surfaces and interfaces exploitation in devices. Part 2 CdTe/CdZn Te/CdTeSe.

Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor.

Abstract: The interest in mid-infrared technologies surrounds plenty of important optoelectronic applications ranging from optical communications, biomedical imaging to night vision cameras, and so on. Although narrow bandgap semiconductors, such as Mercury Cadmium Telluride and Indium Antimonide, and quantum superlattices based on inter-subband transitions in wide bandgap semiconductors, have been employed for mid-infrared applications, it remains a daunting challenge to search for other materials that possess suitable bandgaps in this wavelength range. Here, we demonstrate experimentally for the first time that two-dimensional (2D) atomically thin PtSe2 has a variable bandgap in the mid-infrared via layer and defect engineering. Here, we show that bilayer PtSe2 combined with defects modulation possesses strong light absorption in the mid-infrared region, and we realize a mid-infrared photoconductive detector operating in a broadband mid-infrared range. Our results pave the way for atomically thin 2D noble metal dichalcogenides to be employed in high-performance mid-infrared optoelectronic devices.

Narrow-gap semiconductor photodiodes

Abstract: At present efforts in IR detector research are directed towards improving the performance of single element devices and large electronically scanned arrays, and to obtain higher operating temperature of detectors. Another important aim is to make IR detectors cheaper and more convenient to use. Investigations of the performance of narrow gap semiconductor photodiodes are presented. Recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternative to HgCdTe III-V and II-VI ternary alloy photodiodes, and monolithic lead chalcogenide photodiodes. Investigations of the performance of photodiodes operated at short wavelength IR, 1-3 $mUm; medium wavelength IR, 3-5 micrometers ; and long wavelength IR, 8- 14 micrometers ; are presented. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors. HgCdTe detectors with background limited performance operate with thermoelectric coolers in the medium wavelength range, instead the long wavelength detectors operate at approximately equals 100 K. HgCdTe is characterized by high absorption coefficient and quantum efficiency and relatively low thermal generation rate compared to other detectors.

ULTRA: A Unique Instrument for Time-Resolved Spectroscopy.

Abstract: We report the development of a high-sensitivity time-resolved infrared and Raman spectrometer with exceptional experimental flexibility based on a 10-kHz synchronized dual-arm femtosecond and picosecond laser system. Ultrafast high-average-power titanium sapphire lasers and optical parametric amplifiers provide wavelength tuning from the ultraviolet (UV) to the mid-infrared region. Customized silicon, indium gallium arsenide, and mercury cadmium telluride linear array detectors are provided to monitor the probe laser intensity in the UV to mid-infrared wavelength range capable of measuring changes in sample absorbance of ΔOD ~ 10(-5) in 1 second. The system performance is demonstrated for the time-resolved infrared, two-dimensional (2D) infrared, and femtosecond stimulated Raman spectroscopy techniques with organometallic intermediates, organic excited states, and the dynamics of the tertiary structure of DNA.

Teledyne Imaging Sensors: infrared imaging technologies for astronomy and civil space

Abstract: Teledyne Imaging Sensors develops and produces high performance infrared sensors, electronics and packaging for astronomy and civil space. These IR sensors are hybrid CMOS arrays, with HgCdTe used for light detection and a silicon integrated circuit for signal readout. Teledyne manufactures IR sensors in a variety of sizes and formats. Currently, the most advanced sensors are based on the Hawaii-2RG (H2RG), 2K×2K array with 18 μm pixel pitch. The HgCdTe detector achieves very low dark current (<0.01 e-/pixel/sec) and high quantum efficiency (80-90%) over a wide bandpass. Substrate-removed HgCdTe can simultaneously detect visible and infrared light, enabling spectrographs to use a single focal plane array (FPA) for Visible-IR sensitivity. The SIDECARTM ASIC provides focal plane electronics on a chip, operating in cryogenic environments with very low power (<11 mW). The H2RG and SIDECARTM have been qualified to NASA Technology Readiness Level 6 (TRL-6). Teledyne continues to advance the state-of-the-art and is producing a high speed, low noise array designed for IR wavefront sensing. Teledyne is also developing a 4K×4K, 15 µm pixel infrared array that will be a cost effective module for the large focal planes of the Extremely Large Telescopes and future generation space astronomy missions.