Metal–semiconductor junction

About: Metal–semiconductor junction is a research topic. Over the lifetime, 3759 publications have been published within this topic receiving 81309 citations. The topic is also known as: (M–S) junction.

Metal-semiconductor contacts

Abstract: A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with p-n junctions.

Studies of tunnel MOS diodes, I. Interface effects in silicon Schottky diodes

Abstract: A theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film. A generalized approach is taken towards the interface states which considers their communication with both the metal and the semiconductor. Diodes were fabricated with interfacial films ranging from 8 to 26 A in thickness, and their characteristics are related to this model. The effects of reduced transmission coefficients together with fixed charge in the film are investigated. The interpretation of the current-voltage characteristics and the validity of the C−2-V method in the determination of diffusion potentials are discussed.

Barrier inhomogeneities at Schottky contacts

Abstract: We present a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltage measurements on spatially inhomogeneous Schottky contacts. A new evaluation schema of current and capacitance barriers permits a quantitative analysis of spatially distributed Schottky barriers. In addition, our analysis shows also that the ideality coefficient n of abrupt Schottky contacts reflects the deformation of the barrier distribution under applied bias; a general temperature dependence for the ideality n is predicted. Our model offers a solution for the so‐called T0 problem. Not only our own measurements on PtSi/Si diodes, but also previously published ideality data for Schottky diodes on Si, GaAs, and InP agree with our theory.

Field and thermionic-field emission in Schottky barriers

Abstract: Field emission and thermionic-field (T-F) emission are considered as the phenomena responsible for the excess currents observed both in the forward and reverse directions of Schottky barriers formed on highly doped semiconductors. Voltage-current characteristics are derived for field and thermionic-field emission in the forward and reverse regime. The temperatures and voltages where these phenomena are predominent for a given diode are discussed. Comparison with experimental results on GaAs and Si diodes shows good agreement between theory and experiments.

Carbon nanotubes as schottky barrier transistors.

Abstract: We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors," in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown to be crucial for good device performance.