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Metal–semiconductor junction

About: Metal–semiconductor junction is a research topic. Over the lifetime, 3759 publications have been published within this topic receiving 81309 citations. The topic is also known as: (M–S) junction.


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Journal ArticleDOI
TL;DR: In this article, the Schottky barrier is described by two fitting parameters that are the effective barrier heights ΦBeff and the ideality factors n. Due to lateral inhomogeneities of the barrier height, both parameters differ from one diode to another.
Abstract: Most metal–semiconductor contacts are rectifying. For moderately doped semiconductors, the current transport across such Schottky contacts occurs by thermionic emission over the Schottky barrier. The current–voltage characteristics of real Schottky contacts are described by two fitting parameters that are the effective barrier heights ΦBeff and the ideality factors n. Due to lateral inhomogeneities of the barrier height, both parameters differ from one diode to another. However, their variations are correlated in that ΦBeff becomes smaller with increasing n. Extrapolations of such ΦBeff-versus-n plots to the corresponding image-force-controlled ideality factors nif give the barrier heights of laterally homogeneous contacts. They are then compared with the theoretical predictions for ideal Schottky contacts. Data of Si, GaN, GaAs, and CdTe Schottky contacts reveal that the continuum of metal-induced gap states is the fundamental mechanism that determines the barrier heights. However, there are additional b...

411 citations

Journal ArticleDOI
TL;DR: In this paper, the authors proposed and examined three different plots for the determination of the saturation current, the ideality factor, and the series resistance of Schottky diodes and solar cells from the measurement of a single current (I)/voltage (V) curve.
Abstract: This paper proposes and examines three different plots for the determination of the saturation current, the ideality factor, and the series resistance of Schottky diodes and solar cells from the measurement of a single current (I)/voltage(V) curve. All three plots utilize the small signal conductance and avoid the traditional Norde plot completely. A test reveals that the series resistance and the barrier height of a test diode can be determined with an accuracy of better than 1%. Finally it is shown that a numerical agreement between measured and fittedI/V curves is generally insufficient to prove the physical validity of current transport models.

408 citations

Journal ArticleDOI
TL;DR: In this paper, field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-Doped n+-Ga 2O3 (001) substrate.
Abstract: Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga2O3 (001) substrate. The specific on-resistance of the Ga2O3 FP-SBD was estimated to be 5.1 mΩ·cm2. Successful field-plate engineering resulted in a high breakdown voltage of 1076 V. A larger-than-expected effective barrier height of 1.46 eV, which was extracted from the temperature-dependent current–voltage characteristics, could be caused by the effect of fluorine atoms delivered in a hydrofluoric acid solution process.

386 citations

Journal ArticleDOI
TL;DR: In this article, the authors report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures.
Abstract: In this paper, we report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures, a low-resistance n+-GaN/2DEG ohmic contact regrown by MBE, a manufacturable 20-nm symmetric and asymmetric self-aligned-gate process, and a lateral metal/2DEG Schottky contact. As a result of proportional scaling of intrinsic and parasitic delays, an ultrahigh fT exceeding 450 GHz (with a simultaneous fmax of 440 GHz) and a fmax close to 600 GHz (with a simultaneous fT of 310 GHz) are obtained in deeply scaled GaN HEMTs while maintaining superior Johnson figure of merit. Because of their extremely low on-resistance and high gain at low drain voltages, the devices exhibited excellent noise performance at low power. 501-stage direct-coupled field-effect transistor logic ring oscillator circuits are successfully fabricated with high yield and high uniformity, demonstrating the feasibility of GaN-based E/D-mode integrated circuits with transistors. Furthermore, self-aligned GaN Schottky diodes with a lateral metal/2DEG Schottky contact and a 2DEG/ n+-GaN ohmic contact exhibited RC-limited cutoff frequencies of up to 2.0 THz.

384 citations

Journal ArticleDOI
TL;DR: In this article, an on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 µm ferroelectric PbTi${\mathrm{O}}_{3}$ film, a Au Schottky contact, and a bottom electrode.
Abstract: A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 \ensuremath{\mu}m ferroelectric PbTi${\mathrm{O}}_{3}$ film, a Au Schottky contact, and a ${\mathrm{La}}_{0.5}$${\mathrm{Sr}}_{0.5}$Co${\mathrm{O}}_{3}$ Ohmic bottom electrode. The observations are explained by a model in which the depletion width of the ferroelectric Schottky diode is determined by the polarization dependence of the internal electric field at the metal-ferroelectric interface.

381 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202331
202238
20217
20201
20193
201812