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Showing papers on "Microstrip published in 1968"


Journal ArticleDOI
R.A. Pucel1, D.J. Masse1, C.P. Hartwig1
TL;DR: In this paper, expressions for the conductor loss in microstrip transmission lines are derived for rutile and alumina substrates, taking into account the finite thickness of the strip conductor and apply to the mixed dielectric system.
Abstract: Expressions are derived for the conductor loss in microstrip transmission lines. The formulas take into account the finite thickness of the strip conductor and apply to the mixed dielectric system. Good agreement with experimental data is obtained for rutile and alumina substrates.

543 citations


Journal ArticleDOI
TL;DR: In this article, a theoretical analysis of microwave propagation on microstrip, with particular reference to the case of coupled pairs of microstrip lines, is presented in graphical form for substrate dielectric constants of 1, 9, and 16.
Abstract: A theoretical analysis is presented of microwave propagation on microstrip, with particular reference to the case of coupled pairs of microstrip lines. Data on this type of transmission line are needed for the design of directional couplers, filters, and other components in microwave integrated circuits. The inhomogeneous medium, consisting of the dielectric substrate and the vacuum above it, is treated in a rigorous manner through the use of a "dielectric Green's function" which expresses the discontinuity of the fields at the dielectric-vacuum interface. Results are presented in graphical form for substrate dielectric constants of 1, 9, and 16, and a range of values of width and spacing of the strips. Numerical tables for these and other cases are also available. The tables present capacitance, characteristic impedance, and velocity of propagation of the even and odd normal modes. The method lends itself to the treatment of other geometries which are of practical interest, such as "thick" strips, presence of an unsymmetrically located upper ground plane, etc.

334 citations


Journal ArticleDOI
TL;DR: In this article, a method for computing the line capacitance of a microstrip line based on the application of Fourier transform and variational techniques is reported, where the characteristic impedance, guide wavelength, and the surface potential distribution in the micro-strip line are obtained for a range of structure parameters and the dielectric constant.
Abstract: This paper reports a method for computing the line capacitance of a microstrip line based on the application of Fourier transform and variational techniques. The characteristic impedance, guide wavelength, and the surface potential distribution in the microstrip line are obtained for a range of structure parameters and the dielectric constant. The results calculated from the expressions developed in the paper are compared with the theoretical results presently available in the literature and good agreement is found. Comparison with available experimental results is also made where feasible. Possible applications and limitations of the method are discussed.

254 citations


Journal ArticleDOI
TL;DR: In this paper, a theoretical analysis of a shielded double-layer microstrip line is presented based on a variational calculation of the capacitance in the Fourier-transformed domain and on the charge density distribution as a trial function.
Abstract: A theoretical method is presented by which microstrip-like transmission lines can be analyzed. These transmission lines are characterized by conducting strips, large ground planes, multi-dielectric-layer insulation, and planar geometry. The method is essentially based on a variational calculation of the line capacitance in the Fourier-transformed domain and on the charge density distribution as a trial function. A shielded double-layer microstrip line is analyzed by this method. Derived formulas for this structure are also applicable to simpler structures: a double-layer microstrip line, a shielded microstrip line, and a microstrip line. The calculated values of the line capacitance and the guide wavelength are compared with the measured values where possible. Oxide-layer effects on a silicon microstrip line and shielding effects on a sapphire microstrip line are also discussed based on this theory. The limitations and possible applications of this method are described.

220 citations


Journal ArticleDOI
01 Jan 1968
TL;DR: In this article, the wave propagation properties of microstrip transmission lines can be determined accurately if an exact electrostatic field solution can be found for a pair of charged conductors separated by a dielectric sheet.
Abstract: Wave-propagation properties of microstrip transmission lines can be determined accurately if an exact electrostatic-field solution can be found for a pair of charged conductors separated by a dielectric sheet. The latter problem is framed as an integral equation for whose solution simple numerical methods are available. To determine the kernel function of this integral equation, the classical method of images is generalised to include, multiple partial images; the kernel function is then given by well convergent infinite series. Wave impedances calculated using this theory yield very good agreement with experiment. Detailed results are given for the propagation velocity in microstrip lines with very thin strip conductors, and the method used to solve thick-strip problems is described.

193 citations


Journal ArticleDOI
TL;DR: In this article, the microstrip-line integrated circuits are shown to be feasible at millimeter-wave frequencies in the 25- to 100-GHZ range and the loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB.
Abstract: Monolithic millimeter-wave integrated circuits have been designed and fabricated on semi-insulating GaAs substrates using microstrip transmission lines. Circuits using hybrid techniques have also been constructed on quartz and ceramics. This paper shows that microstrip-line integrated circuits are feasible at millimeter-wave frequencies. Circuit functions have been constructed and tested in the 25- to 100-GHZ range. The loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB//lambda/. Couplers from waveguide to microstrip have been made with transmission losses less than 0.5 dB. Monolithic integrated detectors showed 5-dB better sensitivity than a 1N53 diode in a Philips detector mount. Monolithic diodes delivered 1.5 mW at 28 GHz. The results are encouraging and a fully monolithic integrated receiver is under development.

64 citations


Journal ArticleDOI
TL;DR: In this paper, an analytical program for calculating the field distribution about a microstrip transmission line bounded by a shielding wall is used to calculate the impedance, velocity, and attenuation parameters.
Abstract: An analytical program for calculating the field distribution about a microstrip transmission line bounded by a shielding wall is used to calculate the impedance, velocity, and attenuation parameters. The program input parameters are the dimensions of the strip and shielding wall and the relative dielectric constant of the substrate material. The field distribution about the strip is integrated to find the charge density on the strip and walls with and without the dielectric substrate. From these two calculations, the relative velocity and impedance can be calculated.

63 citations



Proceedings ArticleDOI
20 May 1968
TL;DR: A detailed experimental investigation has brought to light two important aspects of circuit design with microstrip: first, microstrip has an upper frequency limit and second, it is dispersive.
Abstract: Recently there has been considerable interest in the use of the open microstrip geometry as a transmission line in microwave integrated circuits. This form of propagating structure is applicable to a monolithic approach on a semiconductor substrate as well as to a hybrid approach using a ceramic substrate. In order to choose suitable materials, we have investigated the basic properties of microstrip and its interactions with the substrate. A detailed experimental investigation has brought to light two important aspects of circuit design with microstrip. First, microstrip has an upper frequency limit and second, it is dispersive.

50 citations


Patent
21 Nov 1968
TL;DR: In this paper, the conductive layers are stacked in the following order starting at any of the outer faces: connecting layer, ground ground layer, supply layer, and ground layer.
Abstract: Multilayer printed circuit for signals whose rise time is less than one nanosecond. The conductive layers are stacked in the following order starting at any of the outer faces: connecting layer, ground layer, supply layer, ground layer. Thus, connections may be made by means of fixed-impedance microstrip lines and supply by means of very low impedance strip lines (less than a fraction of 1 ohm).

40 citations


Journal ArticleDOI
TL;DR: In this article, a theoretical estimate of the unloaded Q factor available from half and whole wavelength transmission-line resonators on an Al2O3 substrate was made, taking ohmic losses into consideration as well as the radiation losses from various types of cavity termination.
Abstract: A theoretical estimate has been made of the unloaded Q factor available from half and whole wavelength transmission-line resonators on an Al2O3 substrate. This takes ohmic losses into consideration as well as the radiation losses from various types of cavity termination. It is shown that optimisation of the Q factor of open-circuit terminated resonators demands a critical choice of substrate thickness and line characteristic impedance. Short-circuit terminated cavities generally have a substantially higher Q factor. A measurement technique has been developed, based on lightly coupled transmission probes. This has enabled practical measurements to be made of the unloaded Q factor of various microstrip cavities. Agreement with theory is satisfactory. Q factors up to 600 have been measured.

Proceedings ArticleDOI
20 May 1968
TL;DR: In this paper, an alternative kind of transmission line on a dielectric substrate that may be used with or instead of microstrip is described, which consists of a narrow slot or gap in a conductive coating on one side of the substrate.
Abstract: Current development of microwave integrated circuits has revived interest in microstrip transmission line as a means of interconnecting solid-state elements into signal-processing subsystem. This paper describes an alternative kind of transmission line on a dielectric substrate that may be used with or instead of microstrip. As shown in Fig. 1, this alternative consists of a narrow slot or gap in a conductive coating on one side of the substrate. The other side of the substrate is exposed directly to air.

Patent
Philip L Clar1
06 May 1968

Journal ArticleDOI
D. Masse1
01 Mar 1968
TL;DR: In this paper, two microstrip junction circulators have been designed and built for a VSWR less than 1.25 and the maximun insertion loss is 0.4 dB at S-band and 0.6 dB at X-band.
Abstract: Two microstrip junction circulators have been designed and built. Bandwidths of 25 percent at S-band and 32 percent at X-band have been obtained for a VSWR less than 1.25. The maximun insertion loss is 0.4 dB at S-band and 0.6 dB at X-band.

Journal ArticleDOI
TL;DR: In this article, it was shown that microstrip-line integrated circuits are feasible at millimeter-wave frequencies and that the loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB/spl lamda.
Abstract: Monolithic millimeter-wave integrated circuits have been designed and fabricated on semi-insulating GaAs substrates using microstrip transmission lines. Circuits using hybrid techniques have also been constructed on quartz and ceramics. This paper shows that microstrip-line integrated circuits are feasible at millimeter-wave frequencies. Circuit functions have been constructed and tested in the 25- to 100-GHz range. The loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB/ /spl lamda/. Couplers from waveguide to microstrip have been made with transmission losses less than 0.5 dB. Monolithic integrated detectors showed 5-dB better sensitivity than a 1N53 diode in a Philips detector mount. Monolithic diodes delivered 1.5 mW at 28 GHz. The results are encouraging and a fully monolithic integrated receiver is under development.

Patent
29 Feb 1968
TL;DR: In this article, the authors propose a co-planing approach for connecting a COAXial Line to a flat line by means of a COXIAL COUPLING including a tapered PIN of a ParticULAR CONFIGURATION.
Abstract: A COUPLING APPARATUS FOR CONNECTING A COAXIAL LINE TO A FLAT LINE CONFIGURATION BY MEANS OF A COAXIAL COUPLING INCLUDING A TAPERED PIN OF A PARTICULAR CONFIGURATION PROVIDING COLINEAR ALIGNEMENT OF THE COAXIAL LINE AND THE FLAT LINE CONFIGURATION, OPTIMAL IMPEDANCE MATCHING AND EXTREMELY BROAD BAND PERFORMANCE.

Patent
17 May 1968
TL;DR: In this paper, the characteristic impedance of a microstrip delay line is controlled by altering the effective area of the ground plane, which increases the performance of the line while maintaining a nearly constant time delay.
Abstract: The characteristic impedance of a microstrip delay line is controlled by altering the effective area of the ground plane. Reducing the effective ground plane area increases the characteristic impedance and improves the output rise time while maintaining a nearly constant time delay.

Journal ArticleDOI
01 Sep 1968
TL;DR: In this paper, a half-wavelength open-circuited microstrip ''cavity'' with this transmission line and the varactor diode attached between the end of the cavity and an RF ground was investigated.
Abstract: Electronic tuning of Gunn diodes in hybrid integrated circuits has been studied. Microstrip transmission lines were used to form resonant circuits into which a Gunn diode and a varactor diode were mounted to provide the microwave power and frequency tuning, respectively. Basically, two types of circuits have been investigated. The first is a half-wavelength open-circuited microstrip `cavity' with this transmission line and the varactor diode attached between the end of the cavity and an RF ground. The second is a lumped LC circuit in which the inductance of a short high-impedance microstrip line is resonated with the lumped capacitance of the varactor diode. The latter circuit provides a tuning range of over 10 percent at 7.5 GHz. The power output varies within 2 dB in the tuning range.

Proceedings ArticleDOI
20 May 1968
TL;DR: In this paper, the authors discuss examples for the realization of improved circuit functions by overlaying dielectric and metallic films on the simple structure of distributed microwave integrated circuits, although analysis and techniques discussed here may also be useful for active devices and monolithics.
Abstract: Distributed microwave integrated circuits have in the past been fabricated by common etch-back techniques on metallized dielectric substrates resulting in simple microstrip transmission line structures for the passive circuitry. This paper discusses examples for the realization of improved circuit functions by overlaying dielectric and metallic films on the simple structure. The present discussion will be restricted to the passive part of hybrid integrated circuits, although analysis and techniques discussed here may also be useful for active devices and monolithics.

Patent
29 May 1968


Journal ArticleDOI
TL;DR: In this paper, a non-reciprocal tunable YIG filter in a microstrip configuration has been constructed which makes use of a novel method of generating a circularly polarized field in the plane of the microstrip circuit.
Abstract: A nonreciprocal tunable YIG filter in a microstrip configuration has been constructed which makes use of a novel method of generating a circularly polarized field in the plane of a microstrip circuit. Nonreciprocities in excess of 40 dB have been obtained at X band with relatively low insertion loss and VSWR.

Journal ArticleDOI
TL;DR: An analytical program for calculating the field distribution about a microstrip transmission line bounded by a shielding wall is used to calculate the impedance, velocity, and attenuation parameters.
Abstract: An analytical program for calculating the field distribution about a microstrip transmission line bounded by a shielding wall is used to calculate the impedance, velocity, and attenuation parameters. The program input parameters are the dimensions of the strip and shielding wall and the relative dielectric constant of the substrate material. The field distribution about the strip is integrated to find the charge density on the strip and walls with and without the dielectric substrate. From these two calculations, the relative velocity and impedance can be calculated.

Patent
21 Nov 1968
TL;DR: A wide bAND CIRCULATOR or isolator is a device of the STRIPLINE or MICROSTRIP type as mentioned in this paper, which has a planar and has a large number of access points.
Abstract: A WIDE BAND CIRCULATOR OR ISOLATOR DEVICE OF THE STRIPLINE OR MICROSTRIP TYPE WHICH ACHIEVES A BANDWIDTH EXCEEDING ONE OCTAVE USING STANDARD POLYCRYSTALLINE FERRIMAGNETIC MATERIALS, BUT WHICH CAN ACHIEVE BANDWIDTHS UP TO AND EXCEEDING TWO OCTAVES FOR CERTAIN CONFIGURATIONS OF THE FERRITE JUNCTION, OR WITH A SUITABLE MODE SUPPRESSOR. IN THE DEVICE, THE INNER CONDUCTOR OR CIRCUIT IS PLANAR AND HAS A PLURALITY OF OUTWARDLY TAPERING LEGS EACH OF WHICH CONSTITUTES A PORT. FERRIMAGNETIC OR GYROMAGNETIC MATERIAL IS PROVIDED OVERLYING A SUBSTANTIAL PORTION OF THE CIRCUIT INCLUDING AT LEAST SUBSTANTIALLY ALL OF THE PORTION THEREOF FUNCTIONING AS THE INPUT AND OUTPUT PORTS OF THE DEVICE. THE ENERGY IN THE DEVICE PROPAGATES ALONG THE EDGES THEREOF, AND ACCORDINGLY THE EDGES ARE DESIGNED TO BE FREE OF ABRUPT CHANGES IN ORDER THAT THERE BE NO ABRUPT IMPEDANCE CHANGES IN THE CIRCUIT. VARIOUS METHODS OF MODE SUPPRESSION FOR THIS DEVICE ARE PROVIDED INCLUDING INTERNALLY TERMINATING ONE OF THE PORTS BY AN OVERLYING LAYER OF LOSSY MATERIAL, AND CUTTING SLOTS THROUGH THE GROUND PLANE IN THE SAME DIRECTION AS THE CURRENT FLOW OF THE DESIRED MODE OF PROPAGATION.

Journal ArticleDOI
TL;DR: In this article, the authors present performance data for several microstrip ferrite devices that can play an important role in the exploitation of microwave integrated circuits, including a fixed-field circulator with less than 0.4dB loss and greater than 20dB isolation over the 6.5-to 9.3-GHz band.
Abstract: Complete realization of the potentialities of hybrid microwave integrated circuits will require both semiconductor and ferrite elements. This paper presents performance data for several microstrip ferrite devices that can play an important role in the exploitation of microwave integrated circuits. Data on both fixed-field and latched microstrip junction circulators are given including a fixed-field circulator with less than 0.4-dB loss and greater than 20-dB isolation over the 6.5- to 9.3-GHz band. The characteristics of microstrip meander-line phasers are discussed, and a simple, rugged technique for fabricating single-crystal YIG devices by embedding the YIG element in the substrate is presented.

Journal ArticleDOI
TL;DR: In this article, the authors present performance data for several microstrip ferrite devices that can play an important role in the exploitation of microwave integrated circuits, including a fixed-field circulator with less than 0.4dB loss and greater than 20dB isolation over the 6.5-to 9.3-GHz band.
Abstract: Complete realization of the potentialities of hybrid microwave integrated circuits will require both semiconductor and ferrite elements. This paper presents performance data for several microstrip ferrite devices that can play an important role in the exploitation of microwave integrated circuits. Data on both fixed-field and latched microstrip junction circulators are given including a fixed-field circulator with less than 0.4-dB loss and greater than 20-dB isolation over the 6.5- to 9.3-GHz band. The characteristics of microstrip meander-line phasers are discussed, and a simple, rugged technique for fabricating single-crystal YIG devices by embedding the YIG element in the substrate is presented.

Journal ArticleDOI
TL;DR: In this paper, the authors showed that microstrip-line integrated circuits are feasible at millimeter-wave frequencies and showed that the loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB/λ.
Abstract: Monolithic millimeter-wave integrated circuits have been designed and fabricated on semi-insulating GaAs substrates using microstrip transmission lines. Circuits using hybrid techniques have also been constructed on quartz and ceramics. This paper shows that microstrip-line integrated circuits are feasible at millimeter-wave frequencies. Circuit functions have been constructed and tested in the 25- to 100-GHz range. The loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB/λ. Couplers from waveguide to microstrip have been made with transmission losses less than 0.5 dB. Monolithic integrated detectors showed 5-dB better sensitivity than a 1N53 diode in a philips detector mount. Monolithic diodes delivered 1.5 mW at 28 GHz. The results are encouraging and a fully monolithic integrated receiver is under development.


Patent
25 Oct 1968
TL;DR: A microstrip delay line is formed by etching a metal film to a highly defined pattern, gold-plating the pattern and bonding the plated pattern onto a ceramic base as discussed by the authors.
Abstract: A microstrip delay line is formed by etching a metal film to a highly- defined pattern, gold-plating the pattern and bonding the plated pattern onto a ceramic base.