Topic
Modeling and simulation
About: Modeling and simulation is a research topic. Over the lifetime, 10273 publications have been published within this topic receiving 111550 citations.
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TL;DR: In this article, a new fractal scaling model is proposed for use in aquifer heterogeneity modeling and simulation, which is obtained by subordination of fractional Brownian motion, providing a unifying framework for scaling models of heterogeneity in that it can also be tuned continuously between these models.
Abstract: A new fractal scaling model is proposed for use in aquifer heterogeneity modeling and simulation. The new model, which is obtained by subordination of fractional Brownian motion, provides a unifying framework for scaling models of heterogeneity in that it includes previous scaling models as special cases and can also be tuned continuously between these models. Choosing the subordinator to be a lognormal distribution results in a non-Gaussian scaling model with a moderate degree of variability that matches data better than previous fractal scaling models, thus providing more accurate heterogeneity representations for use in stochastic flow and transport predictions. Two new stochastic simulation algorithms are constructed from the new models, one based on sequential simulation algorithms and the other based on probability field simulation. Both algorithms can be made conditional on available measurements.
50 citations
TL;DR: This paper's vision of an aircraft design process using Web-based modeling and simulation, with its emphasis on collaborative composition of simulation models, distributed heterogeneous execution, and dynamic multimedia documentation is presented.
Abstract: Designing and developing new aircraft systems is time-consuming and expensive. Computational simulation is a promising means for reducing design cycle times, but requires a flexible software environment capable of integrating advanced multidisciplinary and multifidelity analysis methods, dynamically managing data across heterogeneous computing platforms, and distributing computationally complex tasks. Web-based simulation, with its emphasis on collaborative composition of simulation models, distributed heterogeneous execution, and dynamic multimedia documentation, has the potential to meet these requirements. This paper outlines the current aircraft design process, highlighting its problems and complexities, and presents our vision of an aircraft design process using Web-based modeling and simulation.
49 citations
TL;DR: Topics such as subgrid parameterization, numerical algorithms with a focus on aerosol simulation, data assimilation and inverse modeling, reduction of high-dimensional models and propagation of uncertainties are addressed.
Abstract: Air pollution modeling is now a mature field, and comprehensive numerical models (the chemistry-transport models) are used in many applications. This article aims at reviewing the main issues from the point of view of applied mathematics and computational physics (as viewed by the author). We address topics such as subgrid parameterization, numerical algorithms with a focus on aerosol simulation, data assimilation and inverse modeling, reduction of high-dimensional models and propagation of uncertainties. Even if this article is strictly related to air pollution modeling, many issues and methods can be extended to dispersion of tracers in other media (for instance, water).
49 citations
TL;DR: In this paper, a numerical tool based on the finite volume method is presented, with validations in terms of numerical and physical accuracy, by considering the shrinkage involved in the process and the successive layers deposition.
49 citations
TL;DR: In this article, a 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk gallium nitride (GaN) PN diodes.
Abstract: Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.
49 citations