Moiré pattern

About: Moiré pattern is a research topic. Over the lifetime, 1917 publications have been published within this topic receiving 27176 citations. The topic is also known as: moiré fringes & moire pattern.

Evaluation of interfacial misfit strain field of heterostructures using STEM nano secondary moiré method.

Abstract: STEM nano-moiré can achieve high-precision deformation measurement in a large field of view. In scanning moiré fringe technology, the scanning line and magnification of the existing transmission electron microscope (TEM) cannot be changed continuously. The frequency of the crystal lattice is often difficult to match with the fixed frequency of the scanning line, resulting in mostly too dense fringes that cannot be directly observed; thus, the calculation error is relatively large. This problem exists in both the STEM moiré method and the multiplication moiré method. Herein, we propose the STEM secondary nano-moiré method, i.e., a digital grating of similar frequency is superimposed on or sampling the primary moiré fringe or multiplication moiré to form the secondary moiré. The formation principle of the secondary moiré is analyzed in detail, with deduced theoretical relations for measuring the strain of STEM secondary nano-moiré fringe. The advantages of sampling secondary moiré and digital secondary moiré are compared. The optimal sampling interpolation function is obtained through error analysis. This method expands the application range of the STEM moiré method and has better practicability. Finally, the STEM secondary nano-moiré is used to accurately measure the strain field at the Si/Ge heterostructure interface, and the theoretical strain field calculated by the dislocation model is analyzed and compared. The obtained results are more compatible with the P-N dislocation model. Our work provides a practical method for the accurate evaluation of the interface characteristics of heterostructures, which is an important basis for judging the photoelectric performance of the entire device and the optimal design of the heterostructures.

Rotational and dilational reconstruction in transition metal dichalcogenide moiré bilayers

Abstract: Lattice reconstruction and corresponding strain accumulation plays a key role in defining the electronic structure of two-dimensional moiré superlattices, including those of transition metal dichalcogenides (TMDs). Imaging of TMD moirés has so far provided a qualitative understanding of this relaxation process in terms of interlayer stacking energy, while models of the underlying deformation mechanisms have relied on simulations. Here, we use interferometric four-dimensional scanning transmission electron microscopy to quantitatively map the mechanical deformations through which reconstruction occurs in small-angle twisted bilayer MoS2 and WSe2/MoS2 heterobilayers. We provide direct evidence that local rotations govern relaxation for twisted homobilayers, while local dilations are prominent in heterobilayers possessing a sufficiently large lattice mismatch. Encapsulation of the moiré layers in hBN further localizes and enhances these in-plane reconstruction pathways by suppressing out-of-plane corrugation. We also find that extrinsic uniaxial heterostrain, which introduces a lattice constant difference in twisted homobilayers, leads to accumulation and redistribution of reconstruction strain, demonstrating another route to modify the moiré potential.

Tailoring Dirac Fermions by <i>In-Situ</i> Tunable High-Order Moiré Pattern in Graphene-Monolayer Xenon Heterostructure

Abstract: A variety of novel quantum phases have been achieved in twist bilayer graphene (tBLG) and other moire superlattices recently, including correlated insulators, superconductivity, magnetism, and topological states. These phenomena are very sensitive to the moire superlattices, which can hardly be changed rapidly or intensely. Here, we report the experimental realization of a high-order moire pattern (a high-order interference pattern) in graphene-monolayer xenon heterostructure (G/mXe), with moire period in-situ tuned from few nanometers to infinity by changing the lattice constant of Xe through different annealing temperatures and pressures. We use angle-resolved photoemission spectroscopy to directly observe that replicas of graphene Dirac cone emerge and move close to each other in momentum-space as moire pattern continuously expands in real-space. When the moire period approaches infinity, the replicas finally overlap with each other and an energy gap is observed at the Dirac point induced by intervalley coupling, which is a manifestation of Kekule distortion. We construct a continuum moire Hamiltonian, which can explain the experimental results well. The form of moire Hamiltonian in G/mXe is similar to that in tBLG, and moire band with narrow bandwidth is predicted in G/mXe. However, the moire Hamiltonian couples Dirac fermions from different valleys in G/mXe, instead of ones from different layers in tBLG. Our work demonstrates a novel platform to study the continuous evolution of moire pattern and its modulation effect on electronic structure, and provides an unprecedented approach for tailoring Dirac fermions with tunable intervalley coupling.

Moire Deflectometry - Applications To Lens Analysis

Abstract: Moire deflectometry, a method for ray deflection mapping, is described. Its use in lens testing for determining properties such as surface microstructure, radius of curvature, thickness, aberrations, and OTF (optical transfer function), is demonstrated. Unlike interferometry, moire deflectometry is a ray tracing technique, and therefore the analysis of three dimensional objects is greatly simplified. Although the ray tracing approach to optical systems is much older than wave theory, moire deflectometry seems to be the first attempt to apply ray tracing methods systematically to optical metrology. The technique is fully quantitative, interferometry compatible in accuracy, and has the additional advantage of tunable sensitivity.

Mask alignment technique using phase-shifted moire signals

Abstract: Moire technique with different variations has been successfully used for mask alignment, with very high accuracies. In this paper we report a new approach to computer controlled mask alignment using modified moire technique. In this technique alignment is controlled in the higher slope region of the moire signal using a single pair of grating alignment marks. In the present case a phase shifted signal is generated by the computer using the input moire signal. The point at which this phase shifted signal becomes equal to the moire signal is treated as the alignment point. The error signal for controlling alignment is obtained by computing the difference of instantaneous moire signal from the intensity of this point. Computer simulation studies as well as experimental studies were conducted on this approach. The results of these studies are presented.