Showing papers on "Mott transition published in 1971"

Metal-insulator transition in transition metal oxides

Abstract: Electronic band structure calculations for TiO, VO, MnO, FeO, CoO, and NiO suggest that the 4s band becomes degenerate with the 3d band at VO and thus helps to destroy the Mott insulator state. The large difference in lattice constant between the metallic and insulating oxides is well accounted for in terms of the Mott transition. Calculated values of the crystal field splitting 10 Dq are about 70% of experimental ones.

Zero-Bias Anomaly in Irradiated Pb-GaAs Tunnel Junctions, and the Mott Transition

Abstract: Pb-GaAs Schottky barriers irradiated progressively by 10-MeV electrons or fast neutrons were found to exhibit anomalous behavior identical to that produced by varying the initial doping. The results are consistent with the Hubbard model of the Mott transition.

Optics of Solid State Phase Transformations

Abstract: The optical spectra of Mott insulators and amorphous semiconductors are discussed in detail, and are contrasted with the spectra of ordinary crystalline semiconductors Particular emphasis is placed on the transition-metal oxides and the chalcogenide glasses The major difference between the spectra of such materials and those of the more common semiconductors arise from the breakdown of the k-conservation selection rules and the presence of intrinsic localized states