Mott transition

About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.

Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator.

Abstract: Electron or hole doping in a Mott insulator leads to superconductivity, with the mechanism obscured by multi-orbital Fermi surface reconstructions. Here, Kawasugi et al. report doping dependent Hall coefficients and resistivity anisotropy of an organic Mott insulator, revealing doping asymmetry of reconstructed Fermi surface of a single electronic orbital.

Photovoltaic effect for narrow-gap Mott insulators

Abstract: We discuss the photovoltaic effect at a $p\text{\ensuremath{-}}n$ heterojunction, in which the illuminated side is a doped Mott insulator, using the simplest description of a Mott insulator within the Hubbard model. We find that the energy efficiency of such a device, if we choose an appropriate narrow-gap Mott insulator, can be significantly enhanced due to impact ionization caused by the photoexcited ``hot'' electron-hole pairs. Namely, the photoexcited electron and/or hole can convert its excess energy beyond the Mott-Hubbard gap to additional electrical energy by creating multiple electron-hole pairs in a time scale which can be shorter than the time characterizing other relaxation processes.

Electric Field Quench in AdS/CFT

Abstract: An electric field quench, a suddenly applied electric field, can induce nontrivial dynamics in confining systems which may lead to thermalization as well as a deconfinement transition. In order to analyze this nonequilibrium transitions, we use the AdS/CFT correspondence for $$ \mathcal{N}=2 $$ supersymmetric QCD that has a confining meson sector. We find that the electric field quench causes the deconfinement transition even when the magnitude of the applied electric field is smaller than the critical value for the static case (which is the QCD Schwinger limit for quark-antiquark pair creation). The time dependence is crucial for this phenomenon, and the gravity dual explains it as an oscillation of a D-brane in the bulk AdS spacetime. Interestingly, the deconfinement time takes only discrete values as a function of the magnitude of the electric field. We advocate that the new deconfinement phenomenon is analogous to the exciton Mott transition.

Phase diagram of the Mott transition in a two-band Hubbard model in infinite dimensions

Abstract: The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator transition is obtained analytically as a function of the on-site Coulomb interaction at the d-orbital, the charge-transfer energy between the d- and p-orbitals and the hopping integrals between p-d, d-d and p-p orbitals. The result is in good agreement with the numerical results obtained from the exact diagonalization method.

Extension of the Brinkman-Rice picture and the Mott transition

Abstract: In order to explain the metal-Mott-insulator transition, the Brinkman-Rice (BR) picture is extended. In the case of less than one as well as one electron per atom, the on-site Coulomb repulsion is given by U = κρ 2 U c by averaging the electron charge per atom over all atomic sites, where κ is the correlation strength of U, p is the band filling factor, and U c is the critical on-site Coulomb energy. The effective mass of a quasiparticle is found to be m*/m = 1/1-x 2 p 4 for 0 < κρ 2 < 1 and seems to follow the heat capacity data of Sr 1-x La x TiO 3 and YBa 2 Cu 3 O 7-δ at κ = 1 and 0 < κρ 2 < 1. The Mott transition of the first order occurs at κρ 2 = 1 and a band-type metal-insulator transition takes place at κρ 2 = 0. This Mott transition is compared with that in the d = oo Hubbard model.