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Mott transition

About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.


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Book
Kosaku Yamada1
24 Jun 2010
TL;DR: In this paper, the role of electron correlation in superconductivity in metals is explained in detail on the basis of the Fermi liquid theory, and the effects of electron correlations on transport phenomena such as electric resistivity and Hall coefficient, magnetism, and Mott transition are discussed.
Abstract: Since the discovery of high Tc superconductivity, the role of electron correlation on superconductivity has been an important issue in condensed matter physics. Here the role of electron correlation in metals is explained in detail on the basis of the Fermi liquid theory. The book, originally published in 2004, discusses the following issues: enhancements of electronic specific heat and magnetic susceptibility, effects of electron correlation on transport phenomena such as electric resistivity and Hall coefficient, magnetism, Mott transition and unconventional superconductivity. These originate commonly from the Coulomb repulsion between electrons. In particular, superconductivity in strongly correlated electron systems is discussed with a unified point of view. This book is written to explain interesting physics in metals for undergraduate and graduate students and researchers in condensed matter physics.

33 citations

Journal ArticleDOI
TL;DR: These effects are investigated within a simple model, in the framework of dynamical mean-field theory, and compare favorably to recent experiments on the layered organic-conductor kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Cl.
Abstract: Close to the Mott transition, lattice degrees of freedom react to the softening of electron degrees of freedom. This results in a change of lattice spacing, a diverging compressibility, and a critical anomaly of the sound velocity. These effects are investigated within a simple model, in the framework of dynamical mean-field theory. The results compare favorably to recent experiments on the layered organic-conductor kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Cl. We predict that effects of a similar magnitude are expected for V2O3, despite the much larger value of the elastic modulus of this material.

33 citations

Journal ArticleDOI
TL;DR: The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi2Sr2CaCu2O8+delta (Pb2212).
Abstract: We construct the low-energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi2Sr2CaCu2O8+delta (Pb2212).

32 citations

Journal ArticleDOI
TL;DR: In this article, the paramagnetic phase diagram of the Hubbard model with nearest-neighbor and next-nearest neighbor hopping on the Bethe lattice is computed at half-filling and in the weakly doped regime using the self-energy functional approach for dynamical mean-field theory.
Abstract: The paramagnetic phase diagram of the Hubbard model with nearest-neighbor and next-nearest-neighbor (NNN) hopping on the Bethe lattice is computed at half-filling and in the weakly doped regime using the self-energy functional approach for dynamical mean-field theory NNN hopping breaks the particle-hole symmetry and leads to a strong asymmetry of the electron-doped and hole-doped regimes Phase separation occurs at and near half-filling, and the critical temperature of the Mott transition is strongly suppressed

32 citations

Journal ArticleDOI
TL;DR: In this article, a low temperature photoluminescence (PL) showed a strong emission peak at 0.679eV with a very narrow linewidth of 17meV at excitation power density of 3.4W∕cm2.
Abstract: Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679eV with a very narrow linewidth of 17meV at excitation power density of 3.4W∕cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45meV from 300to15K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3×1017cm−3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2×1017cm−3.

32 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202334
202271
202165
202064
201968
201871